Abstract: An antibody binding to IPC was obtained by using an animal cell in which a cell membrane protein associatable with ILT7 was co-expressed as an immunogen. The antibody of the invention has a high specificity which allows immunological distinction between other ILT family molecules and ILT7. The anti-ILT7 antibody of the invention bound to IPC and inhibited the activity thereof. With the anti-ILT7 antibody of the invention, the IPC activity can be inhibited and an interferon-related disease can be treated or prevented. ILT7 expression is maintained even in IPC in the presence of IFN?. Therefore, an inhibitory action of IPC activity by the anti-ILT7 antibody can be expected even in an autoimmune disease patient with an increased production of IFN?.

Abstract: BST2 antibodies were selected by using as an indicator the binding between BST2 antibodies and various splicing variants of human BST2 antigen. As a result, the present inventors successfully obtained BST2 antibodies that specifically recognize BST2D, which has been reported to be expressed at high levels in cancer cells. The antibodies of the present invention specifically bind to cells expressing BST2D. Non-specific antibody binding to non-target tissues, which results in the decrease of antibody concentration in blood, can be prevented by using the antibodies of the present invention therapeutically. Alternatively, the present invention provides diagnostic agents comprising an antibody of the present invention, which specifically detect tissues expressing BST2D.

Abstract: An antibody binding to IPC was obtained by using an animal cell in which a cell membrane protein associatable with ILT7 was co-expressed as an immunogen. The antibody of the invention has a high specificity which allows immunological distinction between other ILT family molecules and ILT7. The anti-ILT7 antibody of the invention bound to IPC and inhibited the activity thereof. With the anti-ILT7 antibody of the invention, the IPC activity can be inhibited and an interferon-related disease can be treated or prevented. ILT7 expression is maintained even in IPC in the presence of IFN?. Therefore, an inhibitory action of IPC activity by the anti-ILT7 antibody can be expected even in an autoimmune disease patient with an increased production of IFN?.

Abstract: Whether there is a defect such as chipping of a die or separation of a resin in a wafer level package is electrically detected. A peripheral wiring is disposed along four peripheries of a semiconductor substrate outside a circuit region and pad electrodes P1-P8. The peripheral wiring is formed on the semiconductor substrate and is made of a metal layer that is the same layer as or an upper layer of a metal layer forming the pad electrodes P1-P8, or a polysilicon layer. A power supply electric potential Vcc is applied to a first end of the peripheral wiring, while a ground electric potential Vss is applied to a second end of the peripheral wiring through a resistor R2. A detection circuit is connected to a connecting node N1 between the peripheral wiring and the resistor R2, and is structured to generate an anomaly detection signal ERRFLG based on an electric potential at the connecting node N1.

Abstract: An electronic part positioning jig is provided, which includes a positioning member which is made of carbon and positions an element part, and a platform which supports the positioning member on a plane. The platform includes a frame member which receives the positioning member, and a body portion which fixes the frame member. The positioning member is sandwiched between the frame member and the body portion so as to be displaceable on the body portion by the frame member being fixed to the body portion by a joining member.

Abstract: An antibody binding to IPC was obtained by using an animal cell in which a cell membrane protein associatable with ILT7 was co-expressed as an immunogen. The antibody of the invention has a high specificity which allows immunological distinction between other ILT family molecules and ILT7. The anti-ILT7 antibody of the invention bound to IPC and inhibited the activity thereof. With the anti-ILT7 antibody of the invention, the IPC activity can be inhibited and an interferon-related disease can be treated or prevented. ILT7 expression is maintained even in IPC in the presence of IFN?. Therefore, an inhibitory action of IPC activity by the anti-ILT7 antibody can be expected even in an autoimmune disease patient with an increased production of IFN?.

Abstract: Whether there is a defect such as chipping of a die or separation of a resin in a wafer level package is electrically detected. A peripheral wiring is disposed along four peripheries of a semiconductor substrate outside a circuit region and pad electrodes P1-P8. The peripheral wiring is formed on the semiconductor substrate and is made of a metal layer that is the same layer as or an upper layer of a metal layer forming the pad electrodes P1-P8, or a polysilicon layer. A power supply electric potential Vcc is applied to a first end of the peripheral wiring, while a ground electric potential Vss is applied to a second end of the peripheral wiring through a resistor R2. A detection circuit is connected to a connecting node N1 between the peripheral wiring and the resistor R2, and is structured to generate an anomaly detection signal ERRFLG based on an electric potential at the connecting node N1.

Abstract: An antibody binding to IPC was obtained by using an animal cell in which a cell membrane protein associatable with ILT7 was co-expressed as an immunogen. The antibody of the invention has a high specificity which allows immunological distinction between other ILT family molecules and ILT7. The anti-ILT7 antibody of the invention bound to IPC and inhibited the activity thereof. With the anti-ILT7 antibody of the invention, the IPC activity can be inhibited and an interferon-related disease can be treated or prevented. ILT7 expression is maintained even in IPC in the presence of IFN?. Therefore, an inhibitory action of IPC activity by the anti-ILT7 antibody can be expected even in an autoimmune disease patient with an increased production of IFN?.

Abstract: A carbon component having a hole therein and an outer surface covered with a ceramic coating, and a method for manufacturing the carbon component are provided. The carbon component includes two carbon plate members joined together. The hole is defined by a groove formed on a mating surface of at least one of the carbon plate members and a mating portion of the other of the carbon plate members, which opposes the groove. An inner surface of the hole including a surface of the groove is entirely covered with a ceramic coating.

Abstract: BST2 antibodies were selected by using as an indicator the binding between BST2 antibodies and various splicing variants of human BST2 antigen. As a result, the present inventors successfully obtained BST2 antibodies that specifically recognize BST2D, which has been reported to be expressed at high levels in cancer cells. The antibodies of the present invention specifically bind to cells expressing BST2D. Non-specific antibody binding to non-target tissues, which results in the decrease of antibody concentration in blood, can be prevented by using the antibodies of the present invention therapeutically. Alternatively, the present invention provides diagnostic agents comprising an antibody of the present invention, which specifically detect tissues expressing BST2D.

Abstract: An antibody binding to IPC was obtained by using an animal cell in which a cell membrane protein associatable with ILT7 was co-expressed as an immunogen. The antibody of the invention has a high specificity which allows immunological distinction between other ILT family molecules and ILT7. The anti-ILT7 antibody of the invention bound to IPC and inhibited the activity thereof. With the anti-ILT7 antibody of the invention, the IPC activity can be inhibited and an interferon-related disease can be treated or prevented. ILT7 expression is maintained even in IPC in the presence of IFN?. Therefore, an inhibitory action of IPC activity by the anti-ILT7 antibody can be expected even in an autoimmune disease patient with an increased production of IFN?.

Abstract: An object of the present invention is to provide a novel bisbenzotriazolylphenol compound having a UV absorving effect. The bisbenzotriazolylphenol compound of the invention is represented by the formula ##STR1## wherein A is a direct bond or represents a C.sub.1-6 alkylene group, a --C(CH.sub.3).sub.2 -- group, a --C(C.sub.2 H.sub.5)(CH.sub.3)-- group, a --O-- group or a --NH-- group, R.sup.1 and R.sup.3 are the same or different and each represent a hydrogen atom, a C.sub.1-4 alkyl group, an aryl group, a C.sub.1-4 alkoxy group or a halogen atom, and R.sup.2 and R.sup.4 are the same or different and each represent a hydroxyl group or a C.sub.1-12 straight- or branched-chain hydroxyalkyl group.

Abstract: A superlattice APD includes light absorption layer for generating carriers by absorbing light, a multiplication layer for multiplying the carriers, and a pair of electrodes for driving the carriers. The multiplication layer includes a superlattice structure with a well layer less than 10 nm in thickness and a barrier layer more than 10 nm and less than 20 nm in thickness deposited in alternate layers.

Abstract: There is provided a self-routing optical switch array formed by connecting m stages of optical switches and set so as to satisfy the relation:.lambda..sub.a1 <.lambda..sub.1 <.lambda..sub.a2 .lambda..sub.2 <. . . <.lambda..sub.an <.lambda..sub.n. . . <.lambda..sub.am <.lambda..sub.m <.lambda..sub.swhere .lambda..sub.n is wavelength of an absorption edge of a switching region of an nth stage of the optical switch array; .lambda..sub.an is wavelength of destination signal light multiplexed with information signal light used in an optical switch located at the nth stage, and .lambda..sub.s is wavelength of the information signal light.

Abstract: A semiconductor optical switch and an optical switch array for use in an optical logic circuit, photonic switching, OEIC, etc., wherein a light amplifying means is provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, according to the arrangement of the present invention that a light amplifying means is provided in addition to the deflecting portion, no noise component is amplified and therefore the SN ratio is markedly increased.

Abstract: A semiconductor device includes a region in which carriers are transferred in the lamination direction of a multiple quantum well, such as a multiple quantum well multiplication layer of a superlattice APD. A superlattice structure with a varying well width is introduced to a hetero-interface present in the transfer region, thereby preventing pile-up of the carriers.

Abstract: A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIC, etc. The device includes a light amplifying arrangement provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN ratio is markedly increased.

Abstract: A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIB, etc. The device includes a light amplifying arrangement provided on a bypass wavelength that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN radio is markedly increased.

Abstract: Disclosed is an apparatus for forming a device having a fine structure, the apparatus including a high intensity ion source. The apparatus can be used to form fine grooves and/or a fine film, by supplying a reactive gas to the surface to be etched or coated while irradiating a focused ion beam on the surface. A laser or electron beam can be irradiated on substantially the same axis as that of the focused ion beam, whereby defects arising due to ion beam processing can be repaired. The apparatus can further include ion beam current detection and measurement structure to determine when a predetermined thickness of coating or depth of etching is achieved. The apparatus can include multiple chambers sequentially holding the surface treated, and can include a scanning electron microscope for scanning the surface being coated or etched.

Abstract: A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIC, etc. The device includes a light amplifying arrangement provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN ratio is markedly increased.