Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.

Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.

Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.

Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.

Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

Abstract: According to one embodiment, a semiconductor light emitting device includes a base body, first to sixth semiconductor layers, first to third conductive layers, a structure, and a first insulating layer. The first semiconductor layer and the structure are separated from the base body in a first direction. The second semiconductor layer is provided between the first semiconductor layer and the base body. The third semiconductor layer is provided between the first r and second semiconductor layers. The fourth semiconductor layer is separated from the base body in the first direction. The fifth semiconductor layer is provided between the fourth semiconductor layer and the base body. The sixth semiconductor layer is provided between the fourth and fifth semiconductor layers. The conductive layers are electrically connected with the semiconductor layers. A portion of the first insulating layer is provided between the third and fifth semiconductor layers.

Abstract: According to one embodiment, semiconductor light emitting element includes: a substrate having a first surface and a second surface on an opposite side of the first surface; an insulating layer provided on the second surface of the substrate; a first metal layer provided on the insulating layer; a semiconductor light emitting unit provided on the first metal layer, the semiconductor light emitting unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer being electrically connected to the first metal layer; and a first electrode layer provided on the first surface of the substrate, the first electrode layer extending in the substrate and in the insulating layer, and the first electrode layer being electrically connected to the first metal layer.

Abstract: A semiconductor light-emitting element includes a first layer having a first conductivity. A second layer having a second conductivity is provided between the first layer and a substrate. A third layer is between the first and second layers. A first electrode is between the substrate and the first layer and is connected to the first layer. An insulating layer is between the first electrode and the substrate and between the first electrode and the second layer. A metal film is between the insulating layer and the substrate and covers the insulating layer and the second layer. The first electrode is in a concave portion extending between the second layer and the first layer. The insulating layer has a surface having a region in which a distance between the insulating layer and the substrate is decreased in a direction from the second layer to the first electrode.

Abstract: A light emitting device includes a first semiconductor layer of a first conductivity type having an upper and lower surface sides. A first portion of the first semiconductor layer is adjacent to a second portion of the first semiconductor layer. A light emitting layer is adjacent to the first portion on the under surface side. A second semiconductor layer of a second conductivity type is on the light emitting layer such that the light emitting layer is between the second semiconductor layer and the first portion. A first conductive layer electrically contacts the second portion of the first semiconductor layer on the under surface side and extends beyond an outer edge of the first semiconductor layer. A protecting layer comprising a metal is on an upper surface side of the first conductive layer. A pad electrode is on the upper surface side of the first conductive layer.

Abstract: A semiconductor light-emitting element includes a stacked body having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. A first metal layer is on the second semiconductor layer. The first metal layer includes a first region extending outward from the stacked body and a second region adjacent to the first region. A distance between a lower surface and an upper surface of the first metal layer in the first region is shorter than a distance between the lower end and the upper surface of the first metal layer in the second region. The lower and upper surfaces of the first metal layer in the first region extend along an outer edge of the first metal layer.

Abstract: A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlXInYGa1?X?YN (0?X?1, 0?Y?1, 0?X+Y?1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.

Abstract: A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlxInyGa1-x-yN (0?X?1, 0?Y?1, 0?X+Y?1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.

Abstract: In a semiconductor light-emitting device, a buffer layer, a un-doped GaN layer, a high carrier concentration n+-layer, an n-type layer, an emission layer, a p-type layer, and a p-type contact layer are deposited in sequence on a sapphire substrate. The semiconductor light-emitting device includes a light-transparent electrode made of indium tin oxide (ITO) which is deposited in the low pressure vacuum chamber flowing at least oxygen gas through electron beam deposition or ion plating treatment, and a thermal process is carried out.

Abstract: In a semiconductor light-emitting device 100, a buffer layer 102, a undoped GaN layer 103, a high carrier concentration n+-layer 104, an n-type layer 105, an emission layer 106, a p-type layer 107, and a p-type contact layer 108 are deposited in sequence on a sapphire substrate. The semiconductor light-emitting device 100 comprises a light-transparent electrode 110 made of indium tin oxide (ITO) which is deposited in the low pressure vacuum chamber flowing at least oxygen gas through electron beam deposition or ion plating treatment and thermal process are carried out.