Abstract: An optical property measurement apparatus is equipped with an optical system unit that selectively places an opening section for passing illumination light, a microlens array for measuring wavefront aberration, and a polarization detection system for measuring a polarization state of the illumination light on an optical path of the illumination light. Accordingly an illumination shape and a size of an illumination optical system, wavefront aberration of a projection optical system and a polarization state of the illumination light can be measured together. Therefore, for example, even when exposure is performed with polarized illumination that is a type of modified illumination, highly-accurate exposure can be achieved by adjusting various optical systems based on the measurement results.

Abstract: An optical property measurement apparatus is equipped with an optical system unit that selectively places an opening section for passing illumination light, a microlens array for measuring wavefront aberration, and a polarization detection system for measuring a polarization state of the illumination light on an optical path of the illumination light. Accordingly an illumination shape and a size of an illumination optical system, wavefront aberration of a projection optical system and a polarization state of the illumination light can be measured together. Therefore, for example, even when exposure is performed with polarized illumination that is a type of modified illumination, highly-accurate exposure can be achieved by adjusting various optical systems based on the measurement results.

Abstract: The aberration measurement method can determine an aberration from a width of an image of a pattern line on a resist or from a ratio of light quantities upon measuring an amount of the aberration of the image formed by an optical projection system. This method further can measure an amount of a deviation of a position of the image of the pattern on the resist so that it can solve laborious work otherwise required by conventional technology that uses a complicated microscope such as a scanning-type electronic microscope. Moreover, the aberration can be determined by measuring a pitch width of a whole line-and-space pattern containing wedge-shaped lines or lengths of the wedge-shaped lines. This does not require to learn the absolute position of the image because a difference between the amounts of deviation of the positions of the different pattern images so that no such complicated microscope is not required.

Abstract: A measuring method comprises a first step to expose by the irradiation of a predetermined energy ray onto the resist layer of a photosensitive board a first mask pattern having at least two linear pattern portions arranged substantially in axial symmetry with respect to a straight line in a predetermined first direction and inclined at a predetermined angle to the straight line in the first direction, a second step to overlap with the first mask pattern image exposed on the resist layer a second mask pattern formed by the linear patterns which extend in a second direction substantially perpendicular to the first direction by relatively driving the second mask pattern in a predetermined amount in the first direction for exposure, and a third step to measure an interval in the second direction between at least two wedge-shaped resist images formed by the overlapped portions of the first mask pattern and the second mask pattern.