Patents by Inventor Koji Kajimura

Koji Kajimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor
    Patent number: 6815721
    Abstract: A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.
    Type: Grant
    Filed: March 8, 2004
    Date of Patent: November 9, 2004
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Hideyo Okushi, Hideyuki Watanabe, Daisuke Takeuchi, Koji Kajimura
  • Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor
    Publication number: 20040169178
    Abstract: A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.
    Type: Application
    Filed: March 8, 2004
    Publication date: September 2, 2004
    Applicant: Agency of Ind Sci & Tech Min of Int'l Trade & Ind
    Inventors: Hideyo Okushi, Hideyuki Watanabe, Daisuke Takeuchi, Koji Kajimura
  • Diamond pn junction diode and method for the fabrication thereof
    Patent number: 6727171
    Abstract: A diamond pn junction diode includes a p-type diamond thin-film layer formed on a substrate and an n-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer formed on a substrate and a p-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: April 27, 2004
    Inventors: Daisuke Takeuchi, Hideyuki Watanabe, Hideyo Okushi, Masataka Hasegawa, Masahiko Ogura, Naoto Kobayashi, Koji Kajimura, Sadanori Yamanaka
  • Diamond pn junction diode and method for the fabrication thereof
    Publication number: 20030155654
    Abstract: A diamond pn junction diode includes a p-type diamond thin-film layer formed on a substrate and an n-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer formed on a substrate and a p-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer.
    Type: Application
    Filed: February 20, 2003
    Publication date: August 21, 2003
    Applicant: Agy Indust'l Sci & Tech, Min Int'l Trade & Indstry
    Inventors: Daisuke Takeuchi, Hideyuki Watanabe, Hideyo Okushi, Masataka Hasegawa, Masahiko Ogura, Naoto Kobayashi, Koji Kajimura, Sadanori Yamanaka
  • Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor
    Publication number: 20010025955
    Abstract: A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.
    Type: Application
    Filed: December 8, 2000
    Publication date: October 4, 2001
    Applicant: AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY, MINISTRY OF INTERNATIONAL TRADE & INDUSTRY
    Inventors: Hideyo Okushi, Hideyuki Watanabe, Daisuke Takeuchi, Koji Kajimura
  • Method for producing homoepitaxial diamond thin films
    Patent number: 6132816
    Abstract: A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.
    Type: Grant
    Filed: October 21, 1998
    Date of Patent: October 17, 2000
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade and Industry
    Inventors: Daisuke Takeuchi, Hideyo Okushi, Koji Kajimura, Hideyuki Watanabe