Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: A solid-state imaging apparatus including a plurality of phase difference detection pixels configured adjacent to one another; and an isolation structure arranged so as to isolate light entering each of light-receiving units of the plurality of phase difference detection pixels, in which the isolation structure is formed so as to have a inclined side wall surface whose cross section is tapered.

Abstract: An embodiment of the invention provides a solid-state image pickup device, including a pixel portion in which a plurality of light receiving areas corresponding to different wavelengths, respectively, are disposed, and transistors used commonly to the plurality of adjacent light receiving areas in the pixel portion, and disposed so as to be brought near to a side of the light receiving area, corresponding to the shorter wavelength, of the plurality of adjacent light receiving areas.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: A solid-state imaging apparatus including a plurality of phase difference detection pixels configured adjacent to one another; and an isolation structure arranged so as to isolate light entering each of light-receiving units of the plurality of phase difference detection pixels, in which the isolation structure is formed so as to have a inclined side wall surface whose cross section is tapered.

Abstract: A organic electroluminescence device includes: a plurality of pixels each including an organic layer and a second electrode in this order on a first electrode having light reflectivity, and each configured to emit light of one wavelength out of two or more different wavelengths, the organic layer including an organic electroluminescence layer; and a black matrix layer provided on light emission side of the second electrode, and having first apertures for the respective pixels. The black matrix layer has inclined surfaces inside the respective first apertures, and inclination angles of the inclined surfaces are set, based on emission wavelengths of the pixels.

Abstract: There is provided a focus detection apparatus including: microlenses; light reception units that receive light which is incident through the microlenses; waveguides that cause light, which is incident to the microlenses at a predetermined angle, to be received by the light reception units and that are provided between the microlenses and the light reception units; and a detection unit that detects focusing using output values from the light reception units.

Abstract: A solid-state imaging apparatus includes a plurality of phase difference detection pixels configured adjacent to one another; and an isolation structure arranged so as to isolate light entering each of light-receiving units of the plurality of phase difference detection pixels, in which the isolation structure is formed so as to have a inclined side wall surface whose cross section is tapered.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: There is provided a focus detection apparatus including: microlenses; light reception units that receive light which is incident through the microlenses; waveguides that cause light, which is incident to the microlenses at a predetermined angle, to be received by the light reception units and that are provided between the microlenses and the light reception units; and a detection unit that detects focusing using output values from the light reception units.

Abstract: There is provided a focus detection apparatus including: microlenses; light reception units that receive light which is incident through the microlenses; waveguides that cause light, which is incident to the microlenses at a predetermined angle, to be received by the light reception units and that are provided between the microlenses and the light reception units; and a detection unit that detects focusing output values from the light reception units.

Abstract: A display unit of the present disclosure includes: a plurality of pixels configured to emit emission light different from one another; and an insulating film provided between the plurality of pixels and having a reflective surface with respect to the emission light, in which an angle of the reflective surface of the insulating film is set for each of the pixels.

Abstract: A solid-state image pickup apparatus includes a substrate, a wiring layer, and a waveguide. The substrate is provided with a pixel array portion constituted of a plurality of pixels each having a photoelectric converter that converts incident light into an electrical signal. The wiring layer includes a plurality of wirings and an insulating layer that covers the plurality of wirings that are laminated above the substrate. The waveguide guides light to each of the photoelectric converters of the plurality of pixels, the waveguide being formed in the wiring layer. The waveguide is formed to have a waveguide exit end from which light exits the waveguide so that a distance between the waveguide exit end and a surface of the photoelectric converter that receives light from the waveguide become shorter, as wavelengths of light guided by the waveguide are longer.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: A computer determines whether destination information is included in permission target information. The destination information indicates a destination to which a file stored in a storage device is transferred. The permission target information includes information indicating a target permitted to access the file. The computer prompts before the file is transferred, upon determining that the destination information is not included in the permission target information, a user to input whether to permit the transfer. The computer adds the destination information to the permission target information upon receiving, via an input device, a permission input for permitting the transfer. The computer transfers the file upon receiving the permission input.

Abstract: A solid-state imaging apparatus includes a plurality of phase difference detection pixels configured adjacent to one another; and an isolation structure arranged so as to isolate light entering each of light-receiving units of the plurality of phase difference detection pixels, in which the isolation structure is formed so as to have a inclined side wall surface whose cross section is tapered.

Abstract: An image processing apparatus determines whether to execute an image processing function indicated by an execution instruction based on a state of a web browser when the received execution instruction indicates a local use, and executes the image processing function indicated by the execution instruction irrespective of the state of the web browser when the received execution instruction indicates a remote use.

Abstract: A solid-state imaging device including a plurality of pixel units configured and disposed in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one unit, the amount of shift of a position of each of the pixels in the pixel unit being set as to differ depending on distance from a center of the imaging area to the pixel unit and a color.