Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic waves in the first waveguide, two inner conductors disposed at different distances from the tube axis and connected to the dielectric window include coaxial conversion parts which cause propagation of the electromagnetic waves dispersed by the dispersion part to direct to the dielectric window side, a body length of the inner conductor most distant from the tube axis, out of body lengths of the two inner conductors, is longer, and a front surface of the dielectric window does not have irregularities.

Abstract: An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic wave in the first waveguide, a coaxial conversion part causes propagation of the electromagnetic waves dispersed by the dispersion part to direct to a side of the dielectric window, and a front surface of the dielectric window does not have irregularities.

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km?1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km?1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: In an antenna including a dielectric window and a slot plate provided on one surface of the dielectric window, in a case where a reference position g is a center position in a width direction of each slot S and a center position in a length direction in the slot plate, the reference position g of each slot is located on a virtual circle centered on a center of gravity G0, and line segments connecting the reference positions g of the slots S and virtual point G1 to which the slots belong are located radially from a virtual point G1, angles (?1 to ?4) between adjacent line segments are equal to each other, and angles (?1 to ?4) formed by the length directions of the slots S at the reference positions g and the line segments to which the slots belong are equal to each other.

Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other.

Abstract: A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.

Abstract: Provided is a self-support diamond substrate made of diamond and a method for producing such a substrate. A foundation substrate is prepared, several pieces of columnar diamond made of diamond single crystal are formed over one surface of the foundation substrate, the diamond single crystal is grown from the tip of each piece of columnar diamond, each piece of diamond single crystal is brought into coalescence to form a diamond substrate layer, the diamond substrate layer is separated from the foundation substrate, and the diamond substrate is produced from the diamond substrate layer. The difference between the highest point and the lowest point in the thickness direction of the diamond substrate is more than 0 ?m and 485 ?m or less and the variation of the angle of the crystal axis over the entire surface of the diamond substrate is more than 0° and 3.00° or less.

Abstract: A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

Abstract: A hand operated pulling and lifting hoist includes: a change gear that engages with a switching pawl fitting provided for an operation lever to convert a manual force applied to the operation lever into a hoist driving force; a fixed support ring disposed for the rotatable mounting of the operation lever about a driving member that is set about the drive shaft to transmit the hoist driving force to the drive shaft; a pivotable support ring formed on the operation lever and rotatably fitted to an internal circumference of the fixed support ring; and a driving-member contact prevention part on the change gear to prevent contact between the pivotable support ring and the driving member.

Abstract: Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.

Abstract: The crystal plane in the interior of the diamond substrate has a curvature higher than 0 km?1 and equal to or lower than 1500 km?1 by preparing a base substrate, forming a plurality of pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate, causing diamond single crystals to grow from tips of each pillar-shaped diamond, coalescing each of the diamond single crystals grown from the tips of each pillar-shaped diamond to form a diamond substrate layer, separating the diamond substrate layer from the base substrate, and manufacturing the diamond substrate from the diamond substrate layer.

Abstract: An object of the present invention is to provide an extruded resin film which thermally shrinks little and a method for producing the same. The present invention provides an extruded resin film, formed by an extrusion forming method, made of a thermoplastic resin, having a thickness of from 0.03 to 0.5 mm, wherein the extruded resin film has a shrinkage ratio in the extrusion direction, S1 (%), which satisfies the following formula (1) and has a shrinkage ratio in the cross-extrusion direction, S2 (%), of from 0 to 5% when being left at rest for 0.5 hours under a hot atmosphere at the temperature of 20° C. above heat distortion temperature (Th) of the thermoplastic resin: 0.1/X?S1?1.7/X??(1) wherein X is thickness of the extruded resin film (mm).

Abstract: A diamond substrate is formed of diamond single crystals by preparing a base substrate; forming plural pillar-shaped diamonds formed of diamond single crystals on one side of the base substrate; causing a diamond single crystal to grow from a tip of each pillar-shaped diamond and coalescing the diamond single crystals growing from the tips of the pillar-shaped diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer, a shape in an in-plane direction of the diamond substrate is a circular shape or a circular shape having an orientation flat plane formed therein and has a diameter of two inches or more.

Abstract: A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: Provided is a technology capable of simply manufacturing a GaN substrate, which is constituted by a GaN crystal having a substantially uniform dislocation density distribution, without using a complicated process, at low cost and at a high yield ratio. An inside of a single crystal substrate is irradiated with a laser to form an amorphous portion on the inside of the single crystal substrate, and a GaN crystal is formed on a one surface of the single crystal substrate to prepare a GaN substrate. A dislocation density distribution over the entirety of a surface of the GaN substrate that is prepared is substantially uniform. The amorphous portion is provided in a plurality of linear patterns in a planar direction of the single crystal substrate, and in a case where a pitch between respective patterns is 0.5 mm, a volume ratio of a total volume of the amorphous portion to a volume of the single crystal substrate is 0.10% or 0.20%. In a case where the pitch between the respective patterns is 1.