Patents by Inventor Koji Makita

Koji Makita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing integrated bipolar and MOS transistors
    Patent number: 4931407
    Abstract: A method for manufacturing MOS and bipolar transistors is proposed which includes MOS and bipolar transistors. The method comprises implanting impurity ions in a channel formation region with a dummy gate insulating film interposed and, subsequent to forming a gate oxide film on the surface of the resultant structure, impurity ions are implanted into an internal base region of the bipolar transistor.
    Type: Grant
    Filed: June 24, 1988
    Date of Patent: June 5, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takeo Maeda, Koji Makita
  • EEPROM with sidewall control gate
    Patent number: 4754320
    Abstract: A semiconductor device, and more particularly, an erasable programmable read only memory has a control gate electrode and a floating gate electrode. The floating gate electrode is formed on one side wall of the control gate electrode through an insulating film.
    Type: Grant
    Filed: February 24, 1986
    Date of Patent: June 28, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshihisa Mizutani, Susumu Kohyama, Koji Makita