Abstract: A photovoltaic cell is described comprising a top transparent electrode, a PV layer, a semiconductor substrate, a bottom electrode, and a metal bus-bar grid assembly deposited on said top transparent electrode. In a preferred embodiment, the top transparent electrode is a thin film of indium-tin-oxide (ITO). The method of manufacturing the PV device or cell includes the steps of: cleaning a preprocessed semiconductor bulk having a PV layer on its top surface; depositing a layer of a transparent conductive film over the top of said PV layer; depositing a metal bus-bar grid assembly over said transparent conductive film; and depositing a metal bottom layer on the bottom surface of said semiconductor bulk.

Abstract: A hybrid photovoltaic (PV) device is composed of a first electrode layer, a semiconductor substrate, a semiconductor PV layer, and a bottom electrode that forms a Shottcky junction between said bottom metal electrode and the PV layer. Because of existence of the Shottcky junction, the PV cell permits light to electricity conversion over a wide-range of light wavelengths, from the so-called visible light (between 350 nm to 900 nm wavelength) to the infrared light (over 900 nm wavelength). Also described is a method for manufacturing a hybrid PV device.

Abstract: A hybrid photovoltaic (PV) device according comprises a semiconductor substrate, a semiconductor photovoltaic (PV) layer on one side of said substrate, a metal layer on top of said PV layer, a first electrode layer on top of said metal layer, and a bottom metal electrode on the opposite side of said substrate from said PV layer, wherein said metal layer forms a Shottcky junction between said metal layer and said PV layer. Because of existence of the Shottcky junction, the PV cell permits light to electricity conversion over a wide-range of light wavelengths, from visible light (between 350 nm to 900 nm wavelength) to infrared light (over 900 nm wavelength). Also described is a method for manufacturing a hybrid PV device.

Abstract: A multi-chamber PV furnace and method for continuously processing the wafers is described. A preferred embodiment includes three main chambers that allow pre-heating, heating, and cooling of the target material in a streamlined process designed for continuous operation in a mass production environment. The three-chamber design shortens the processing time and permits continuous processing of batches of substrate material in an in-line fashion. Each of the three chambers or zones allows for independent control and management of processing temperature, pressure, and atmosphere by means of inlet gate and outlet gate valve mechanisms.

Abstract: A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties.

Abstract: A PIN photovoltaic (PIN PV) device is composed of a first electrode layer, a p-type semiconductor layer, an intrinsic semiconductor layer, an n-type semiconductor substrate, and a back surface electrode. Also described is a method for manufacturing a PIN PV device. In a first embodiment, the method includes cleaning an n-type semiconductor substrate; introducing an inert gas under vacuum and a high temperature to form a high resistivity layer on the top surface of the substrate; forming or depositing a p-type semiconductor layer on the high resistivity layer; forming a transparent electrode layer on the p-type semiconductor layer; and forming a metal electrode on the bottom surface of the substrate. In a second embodiment, an SiC or SiO2 isolation layer is formed on the bottom surface of the substrate after initial cleaning of the wafer before the high resistivity layer is formed on the top of the substrate.

Abstract: A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties.

Abstract: A material is manufactured from a single piece of semiconductor material. The material manufactured includes a top layer of a semiconductor compound and a bottom layer of a semiconductor bulk. The material may also have an intrinsic semiconductor layer. The material is created from a transformative process on the single-piece semiconductor material caused by heating a semiconductor material having an impurity under particular conditions. The material manufactured exhibits photovoltaic properties because the layers formed during the transformative process create a p-i-n, a p-n, or an n-n junction having a band-gap difference between the n-type layers.

Abstract: Provided are a composite wear-resistant member which can be manufactured with a lowered sintering temperature, and thus can prevent the carbonization of a material around super hard particles such as diamond; and a method for manufacturing the member. The member, characterized in that it comprises hard particles comprising diamond particles and WC particles and an iron group metal containing phosphorus as a binding material, wherein the content of phosphorus is 0.01 to 2.0 wt % relative to the total weight of the WC particles and the binding material.

Abstract: Provided are a composite wear-resistant member which can be manufactured with a lowered sintering temperature, and thus can prevent the carbonization of a material around super hard particles such as diamond; and a method for manufacturing the member. The member, characterized in that it comprises hard particles comprising diamond particles and WC particles and an iron group metal containing phosphorus as a binding material, wherein the content of phosphorus is 0.01 to 2.0 wt % relative to the total weight of the WC particles and the binding material.