Abstract: A circuit for a physical quantity detection device includes a drive unit that generates a drive signal that causes an vibrator to vibrate, a detection unit that detects a detection signal outputted from the vibrator based on the drive signal, a passive filter which has a filter characteristic in which a cutoff frequency is lower than a detuning frequency and a cutoff frequency band contains a frequency band higher than the cutoff frequency and to which a signal from the detection unit is inputted, and an amplification unit that amplifies a signal from the passive filter.

Abstract: A circuit for a physical quantity detection device includes a drive unit that generates a drive signal that causes an vibrator to vibrate, a detection unit that detects a detection signal outputted from the vibrator based on the drive signal, a passive filter which has a filter characteristic in which a cutoff frequency is lower than a detuning frequency and a cutoff frequency band contains a frequency band higher than the cutoff frequency and to which a signal from the detection unit is inputted, and an amplification unit that amplifies a signal from the passive filter.

Abstract: The present invention provides a method for preventing and extinguishing fire, the method for preventing and extinguishing fire being effective against fire caused by a pyrophoric material and a water prohibitive substance. The method for preventing and extinguishing fire of the present invention is characterized in that a fire extinguishing foam composition is supplied to a flame caused by the combustion of a pyrophoric material and a water prohibitive substance whereby the flame is suppressed or extinguished, and that a combustible material is changed to an inert substance by a hydration reaction, the combustible material being a pyrophoric material or a water prohibitive substance.

Abstract: A circuit for a physical quantity detection device includes a drive unit that generates a drive signal that causes an vibrator to vibrate, a detection unit that detects a detection signal outputted from the vibrator based on the drive signal, a passive filter which has a filter characteristic in which a cutoff frequency is lower than a detuning frequency and a cutoff frequency band contains a frequency band higher than the cutoff frequency and to which a signal from the detection unit is inputted, and an amplification unit that amplifies a signal from the passive filter.

Abstract: The present invention provides a method for preventing and extinguishing fire, the method for preventing and extinguishing fire being effective against fire caused by a pyrophoric material and a water prohibitive substance. The method for preventing and extinguishing fire of the present invention is characterized in that a fire extinguishing foam composition is supplied to a flame caused by the combustion of a pyrophoric material and a water prohibitive substance whereby the flame is suppressed or extinguished, and that a combustible material is changed to an inert substance by a hydration reaction, the combustible material being a pyrophoric material or a water prohibitive substance.

Abstract: A circuit for a physical quantity detection device includes a drive unit that generates a drive signal that causes an vibrator to vibrate, a detection unit that detects a detection signal outputted from the vibrator based on the drive signal, a passive filter which has a filter characteristic in which a cutoff frequency is lower than a detuning frequency and a cutoff frequency band contains a frequency band higher than the cutoff frequency and to which a signal from the detection unit is inputted, and an amplification unit that amplifies a signal from the passive filter.

Abstract: A semiconductor device having a plurality of memory cells for storing data, an address input circuit having an address signal generation section for independently generating an address signal using a clock signal in a test mode, and a delay circuit for delaying an input time of the address signal from the address input circuit to a subsequent circuit for a predetermined time period which is equal to or longer than the time necessary for the generation of the address signal.

Abstract: A semiconductor memory device has a first precharge transistor connecting a potential supply line to one end of a bit line when the bit line is precharged and a second precharge transistor connecting the potential supply line to the other end of the bit line when the bit line is precharged. To a gate of the first precharge transistor is inputted a first precharge signal, and to a gate of the second precharge transistor is inputted a second precharge signal generated based on a chip-select signal and the first precharge signal. The second precharge transistor is brought into a cut-off state during a standby state in which a memory cell corresponding to the second precharge transistor does not read nor write data but holds date.

Abstract: A highly integrated semiconductor memory device capable of operating at high speed having a plurality of main word lines which extend along a first direction across memory blocks, and sub word lines disposed in each of the memory blocks and subordinate to each of the main word lines. Sub row decoders are provided corresponding to the memory blocks. Each of the sub row decoders has a plurality of sub word select signal lines extending along a second direction and selects one of the sub word lines. First and second signal supply sections, which supply sub word select signals to the sub word select signal lines disposed in the sub row decoders, are provided on either end in the first direction. A block select signal line extending in the sub row decoder along the second direction is connected with the second signal supply section. The second signal supply section generates the sub word select signal based on the potential of the block select signal line.

Abstract: A semiconductor memory device has a first precharge transistor connecting a potential supply line to one end of a bit line when the bit line is precharged and a second precharge transistor connecting the potential supply line to the other end of the bit line when the bit line is precharged. To a gate of the first precharge transistor is inputted a first precharge signal, and to a gate of the second precharge transistor is inputted a second precharge signal generated based on a chip-select signal and the first precharge signal. The second precharge transistor is brought into a cut-off state during a standby state in which a memory cell corresponding to the second precharge transistor does not read nor write data but holds date.

Abstract: A semiconductor device having a plurality of memory cells for storing data, an address input circuit having an address signal generation section for independently generating an address signal using a clock signal in a test mode, and a delay circuit for delaying an input time of the address signal from the address input circuit to a subsequent circuit for a predetermined time period which is equal to or longer than the time necessary for the generation of the address signal.

Abstract: A highly integrated semiconductor memory device capable of operating at high speed having a plurality of main word lines which extend along a first direction across memory blocks, and sub word lines disposed in each of the memory blocks and subordinate to each of the main word lines. Sub row decoders are provided corresponding to the memory blocks. Each of the sub row decoders has a plurality of sub word select signal lines extending along a second direction and selects one of the sub word lines. First and second signal supply sections, which supply sub word select signals to the sub word select signal lines disposed in the sub row decoders, are provided on either end in the first direction. A block select signal line extending in the sub row decoder along the second direction is connected with the second signal supply section. The second signal supply section generates the sub word select signal based on the potential of the block select signal line.

Abstract: A semiconductor memory device that steps up word lines, each of whose length is short enough to stay within one of the blocks that is formed by dividing a memory cell array into multiple blocks. The device includes multiple memory cells connected to pairs of bit lines and word lines at intersections of the pairs of bit lines and the word lines. Multiple memory cell array blocks are formed by dividing the region where the memory cells are arranged into blocks. A first step-up line is commonly used in stepping-up the word lines. A step-up circuit is constructed of a step-up capacitor, which is connected to the first step-up line and a switching transistor, which precharges the step-up capacitor. The semiconductor memory device also has a step-up control circuit that outputs a precharge control signal, which precharges the step-up capacitor by ON driving the switching transistor, and a step-up driving signal, which changes the potential of the negative terminal of the step-up capacitor of the step-up circuit.

Abstract: An apparatus for playing a recording medium on which, in addition to a video format signal and a coded information signal, graphic codes including picture information are recorded as the subcode of the coded information signal. The apparatus is structured to generate, as a reading address data, data which varies sequentially by a predetermined value from a value determined in response to a command, and to write sequentially the graphic codes output from an extracting circuit into a memory and subsequently sequentially read out the graphic codes in the order of address indicated by the reading address data. With this feature, the position of the subcode image can be moved on the picture by the video format signal.