Abstract: The thermal sensor chip includes a substrate in which a cavity having an opening is formed, a membrane provided on a surface of the substrate so as to cover the opening, and a heater provided on or inside the membrane, wherein the heater includes wires in a mesh form constituted by a conductive member.

Abstract: A flow sensor chip includes a substrate in which a cavity having an opening is formed, a membrane provided on a surface of the substrate so as to cover the opening, a heater provided inside the membrane, a first thermopile and a second thermopile provided in the membrane, and a heat conduction member for heat conduction between the substrate and the membrane. A first hot junction and a first cold junction of a thermocouple provided in the first thermopile and a second hot junction and a second cold junction of a thermocouple provided in the second thermopile are arranged at positions overlapping with the opening in a plan view. The heat conduction member includes a first heat conduction member for heat conduction between the first cold junction and the substrate and a second heat conduction member for heat conduction between the second cold junction and the substrate.

Abstract: A thermal flow sensor chip has a heater part, and a pair of thermopiles provided so as to be opposite each other across the heater part. The heater part is famed by doping silicon with an impurity that reduces the electrical resistance. In each of the thermopiles: a silicon region is formed by doping silicon with an impurity that reduces the electrical resistance; the concentration of the impurity in a heater main part, including the lengthwise center of the heater part extending in the first direction, is lower than the concentration of the impurity in a heater outer peripheral part, the heater outer peripheral part being different from the heater main part and including a lengthwise end part of the heater part; and the concentration of the impurity in the heater main part is the same as the concentration of the impurity in at least part of the silicon region of the thermopile.

Abstract: A novel thermopile having high sensitivity and reliability at the time of measuring a flow rate of gas in a thermopile sensor is provided. A thermopile sensor includes a thermopile in which pairings of PolySi and a metal film are connected in series on an insulating film, the metal film is connected so as to overlap on the PolySi in each pair, the metal film crosses a gap between the PolySi and the PolySi in a connection portion between pairings, and a gap between the PolySis in a portion where the metal film crosses is wider than a gap between the PolySis in the remaining portion.

Abstract: A flow sensor chip includes a substrate in which a cavity having an opening is formed, a membrane provided on a surface of the substrate so as to cover the opening, a heater provided inside the membrane, a first thermopile and a second thermopile provided in the membrane, and a heat conduction member for heat conduction between the substrate and the membrane. A first hot junction and a first cold junction of a thermocouple provided in the first thermopile and a second hot junction and a second cold junction of a thermocouple provided in the second thermopile are arranged at positions overlapping with the opening in a plan view. The heat conduction member includes a first heat conduction member for heat conduction between the first cold junction and the substrate and a second heat conduction member for heat conduction between the second cold junction and the substrate.

Abstract: The thermal sensor chip includes a substrate in which a cavity having an opening is formed, a membrane provided on a surface of the substrate so as to cover the opening, and a heater provided on or inside the membrane, wherein the heater includes wires in a mesh form constituted by a conductive member.

Abstract: A flow sensor chip capable of preventing power from being wasted during the electrification of a heater is provided. The flow sensor chip includes a first lead portion connected to an end of a heater portion, a second lead portion connected to the other end of the heater portion, a first electrode pad connected, directly or through a connection portion formed of a material having an electrical conductivity equal to or greater than the heater conductivity, to an end of the first lead portion on a side which is not connected to the heater portion, and a second electrode pad connected, directly or through a connection portion formed of a material having an electrical conductivity equal to or greater than the heater conductivity, to an end of the second lead portion on a side which is not connected to the heater portion.

Abstract: A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The protrusion and the pressure relief hole have a gap therebetween defining an airflow channel as a pressure relief channel.

Abstract: A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The protrusion and the pressure relief hole have a gap therebetween defining an airflow channel as a pressure relief channel.

Abstract: An acoustic sensor adapted to convert acoustic vibration to a change in an electrostatic capacitance to detect the acoustic vibration is provided. The acoustic sensor includes a semiconductor substrate, a back plate including a fixed plate arranged to face a surface of the semiconductor substrate, and a fixed electrode film arranged on the fixed plate, and a vibrating electrode film arranged to face the back plate with a space formed therebetween. The vibrating electrode film includes a plate-like vibrating member that vibrates in response to sound pressure. The vibrating electrode film is fixed to the back plate with a fixing unit thereof including one or more fixing portions each including a fixing protruding end that is arranged on a protruding end of a leg portion protruding from an edge of the vibrating member. The vibrating member has an edge portion surrounding at least a part of the fixing protruding end.

Abstract: An acoustic sensor is provided for improving shock resistance performance, along with a method for manufacturing the acoustic sensor. In the acoustic sensor, a fixing plate is provided by a semiconductor manufacturing process, a frame wall has a curved shape in at least a portion of the periphery of the fixing plate, the frame wall being coupled to the semiconductor substrate. A sacrifice layer removed from the inner side of the fixing plate in the manufacturing process remains at least on a portion of the inner side of the frame wall. Roughness of the remaining sacrifice layer is smaller than roughness of a sound shape reflecting structure in which a shape similar to the external shape of sound holes is repeated. Roughness of the sound shape reflecting structure is formed when removing the sacrifice layer using etching liquid supplied from the plurality of sound holes in the semiconductor manufacturing process.

Abstract: An acoustic transducer includes a slit having higher passage resistance than in conventional structures and having a lower rate of decrease in the passage resistance than in conventional structures when, for example, the vibration electrode plate warps. The acoustic transducer includes a stationary electrode plate, and a vibration electrode plate facing the stationary electrode plate with a space between the electrode plates. The vibration electrode plate includes a slit that allows sound to pass through. The vibration electrode plate includes a resistance increasing section including at least one pair of high-resistance surfaces that constitute side surfaces of the slit in a width direction thereof, and are thicker than a middle portion of the vibration electrode plate.

Abstract: An acoustic sensor adapted to convert acoustic vibration to a change in an electrostatic capacitance to detect the acoustic vibration is provided. The acoustic sensor includes a semiconductor substrate, a back plate including a fixed plate arranged to face a surface of the semiconductor substrate, and a fixed electrode film arranged on the fixed plate, and a vibrating electrode film arranged to face the back plate with a space formed therebetween. The vibrating electrode film includes a plate-like vibrating member that vibrates in response to sound pressure. The vibrating electrode film is fixed to the back plate with a fixing unit thereof including one or more fixing portions each including a fixing protruding end that is arranged on a protruding end of a leg portion protruding from an edge of the vibrating member. The vibrating member has an edge portion surrounding at least a part of the fixing protruding end.

Abstract: An acoustic sensor is provided for improving shock resistance performance, along with a method for manufacturing the acoustic sensor. In the acoustic sensor, a fixing plate is provided by a semiconductor manufacturing process, a frame wall has a curved shape in at least a portion of the periphery of the fixing plate, the frame wall being coupled to the semiconductor substrate. A sacrifice layer removed from the inner side of the fixing plate in the manufacturing process remains at least on a portion of the inner side of the frame wall. Roughness of the remaining sacrifice layer is smaller than roughness of a sound shape reflecting structure in which a shape similar to the external shape of sound holes is repeated. Roughness of the sound shape reflecting structure is formed when removing the sacrifice layer using etching liquid supplied from the plurality of sound holes in the semiconductor manufacturing process.

Abstract: A microphone has a package, and an acoustic sensor, an under surface of which is fixed to an inner face of the package. The acoustic sensor has a substrate having a plurality of hollows penetrating the substrate from a top surface to an under surface, and a capacitor structure made by a movable electrode plate and a fixed electrode plate disposed above each of the hollows. A package sound hole is opened in the package in a position opposed to the under surface of the acoustic sensor. A dent which is communicated with each of the hollows and open below the under surface side of the substrate is formed below the under surface of the substrate. A height of the dent measured from the under surface of the substrate is equal to or less than half of a height of the hollow.

Abstract: An acoustic transducer includes a slit having higher passage resistance than in conventional structures and having a lower rate of decrease in the passage resistance than in conventional structures when, for example, the vibration electrode plate warps. The acoustic transducer includes a stationary electrode plate, and a vibration electrode plate facing the stationary electrode plate with a space between the electrode plates. The vibration electrode plate includes a slit that allows sound to pass through. The vibration electrode plate includes a resistance increasing section including at least one pair of high-resistance surfaces that constitute side surfaces of the slit in a width direction thereof, and are thicker than a middle portion of the vibration electrode plate.