Abstract: A component built-in board comprises a multi-layer structure comprising a plurality of unit boards stacked therein a plurality of electronic components built in thereto in a stacking direction. The plurality of unit boards include: a first board having a first insulating layer and comprising an opening in which the electronic component is housed; and an intermediate board adjacent to the first board and comprising a first adhesive layer provided on at least a side of the first board of a second insulating layer. The intermediate board includes a first wiring layer formed at a position overlapping in the stacking direction a gap between an inner periphery of the opening and an outer periphery of the electronic component of the first board on a surface on the first board side of the second insulating layer.

Abstract: A component built-in board of multi-layer structure that has a plurality of unit boards stacked therein and is configured having a plurality of electronic components built in thereto in a stacking direction, wherein the plurality of unit boards include: a double-sided board that includes a first insulating layer, a first wiring layer formed on both surfaces of the first insulating layer, and a first interlayer conductive layer that penetrates the first insulating layer and is connected to the first wiring layer, and that comprises an opening in which the electronic component is housed; and an intermediate board that includes a second insulating layer, a first adhesive layer provided on both surfaces of the second insulating layer, and a second interlayer conductive layer that penetrates the second insulating layer along with the first adhesive layer, and the double-sided board is disposed above and below the intermediate board.

Abstract: A component built-in board comprises a multi-layer structure comprising a plurality of unit boards stacked therein a plurality of electronic components built in thereto in a stacking direction, the plurality of electronic components include a first electronic component, and the plurality of unit boards including: a first board having a first insulating layer and comprising an opening in which the first electronic component is housed; and an intermediate board adjacent to the first board and comprising: a second insulating layer; a first wiring layer formed on a surface on a side of the first board of the second insulating layer; a first adhesive layer provided on at least the side of the first board of the second insulating layer; and a first thermal via that penetrates the first adhesive layer above the first wiring layer and is connected to the first wiring layer, and the first wiring layer of the intermediate board being connected to the first electronic component via the first thermal via.

Abstract: A component built-in board comprises a multi-layer structure comprising a plurality of unit boards stacked therein a plurality of electronic components built in thereto in a stacking direction. The plurality of unit boards include: a first board having a first insulating layer and comprising an opening in which the electronic component is housed; and an intermediate board adjacent to the first board and comprising a first adhesive layer provided on at least a side of the first board of a second insulating layer. The intermediate board includes a first wiring layer formed at a position overlapping in the stacking direction a gap between an inner periphery of the opening and an outer periphery of the electronic component of the first board on a surface on the first board side of the second insulating layer.

Abstract: A component built-in board of multi-layer structure that has a plurality of unit boards stacked therein and is configured having a plurality of electronic components built in thereto in a stacking direction, wherein the plurality of unit boards include: a double-sided board that includes a first insulating layer, a first wiring layer formed on both surfaces of the first insulating layer, and a first interlayer conductive layer that penetrates the first insulating layer and is connected to the first wiring layer, and that comprises an opening in which the electronic component is housed; and an intermediate board that includes a second insulating layer, a first adhesive layer provided on both surfaces of the second insulating layer, and a second interlayer conductive layer that penetrates the second insulating layer along with the first adhesive layer, and the double-sided board is disposed above and below the intermediate board.

Abstract: A semiconductor device of the invention includes a semiconductor substrate having a first insulating section formed on one surface thereof. A first conductive section is disposed on the one surface of the semiconductor substrate. A second insulating section is superimposed over the first insulating section and covers the first conductive section. A second conductive section is superimposed over the second insulating section. A third insulating section is disposed over the second insulating section and covers the second conductive section. These first conductive section, second insulating section, second conductive section, third insulating section, and terminal altogether constitute a structure. A third opening is formed between adjacent structures. The third opening is formed passing through the third and second insulating sections to expose the first insulating section.

Abstract: A semiconductor device of the invention includes a semiconductor substrate having a first insulating section formed on one surface thereof. A first conductive section is disposed on the one surface of the semiconductor substrate. A second insulating section is superimposed over the first insulating section and covers the first conductive section. A second conductive section is superimposed over the second insulating section. A third insulating section is disposed over the second insulating section and covers the second conductive section. These first conductive section, second insulating section, second conductive section, third insulating section, and terminal altogether constitute a structure. A third opening is formed between adjacent structures. The third opening is formed passing through the third and second insulating sections to expose the first insulating section.

Abstract: A semiconductor device of the invention includes a semiconductor substrate having a first insulating section formed on one surface thereof. A first conductive section is disposed on the one surface of the semiconductor substrate. A second insulating section is superimposed over the first insulating section and covers the first conductive section. A second conductive section is superimposed over the second insulating section. A third insulating section is disposed over the second insulating section and covers the second conductive section. These first conductive section, second insulating section, second conductive section, third insulating section, and terminal altogether constitute a structure. A third opening is formed between adjacent structures. The third opening is formed passing through the third and second insulating sections to expose the first insulating section.

Abstract: A semiconductor device of the invention includes a semiconductor substrate having a first insulating section formed on one surface thereof. A first conductive section is disposed on the one surface of the semiconductor substrate. A second insulating section is superimposed over the first insulating section and covers the first conductive section. A second conductive section is superimposed over the second insulating section. A third insulating section is disposed over the second insulating section and covers the second conductive section. These first conductive section, second insulating section, second conductive section, third insulating section, and terminal altogether constitute a structure. A third opening is formed between adjacent structures. The third opening is formed passing through the third and second insulating sections to expose the first insulating section.