Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

Abstract: The present invention provides a laminating apparatus including a sheet conveyor for conveying a sheet to be laminated, a film conveyor for conveying an elongated laminate film, a pressurizer for overlapping the sheet and the laminate film and for pressurizing the sheet and the laminate film, a film cutter for cutting the laminate film overlapped with the sheet, a sheet detector for detecting the sheet conveyed by the sheet conveyor, and a controller for controlling the film cutter. The controller is so controlled that the laminate film is cut in registration with the leading and trailing ends of the sheet on the basis of detection by the sheet detector.