Patents by Inventor Koji Neishi
Koji Neishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230207316Abstract: A film forming method of forming a metal oxide film on a substrate in a processing container, includes: supplying a raw material gas containing an organometallic precursor into the processing container; removing a residual gas remaining in the processing container after the supplying the raw material gas; subsequently, supplying an oxidizing agent that oxidizes the raw material gas into the processing container; removing a residual gas remaining in the processing container after the supplying the oxidizing agent; and supplying a hydrogen-containing reducing gas into the processing container, simultaneously with the supplying the raw material gas or sequentially after the supplying the raw material gas.Type: ApplicationFiled: December 27, 2022Publication date: June 29, 2023Inventor: Koji NEISHI
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Publication number: 20210217618Abstract: The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.Type: ApplicationFiled: March 31, 2021Publication date: July 15, 2021Inventors: Nobuaki TAKAHASHI, Hitoshi MIURA, Koji NEISHI, Ryuji KATAYAMA, Yusuke MORI, Masayuki IMANISHI
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Publication number: 20150214423Abstract: A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region.Type: ApplicationFiled: September 10, 2014Publication date: July 30, 2015Applicants: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITYInventors: Shinya KIKUTA, Yoshihiro KATO, Koji NEISHI, Yoji IIZUKA, Hitoshi MIURA, Yusaku KASHIWAGI, Nobuaki TAKAHASHI, Hiroshi AMANO, Yoshio HONDA
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Publication number: 20150214429Abstract: There is provided a method for manufacturing a rod-type light emitting device, which includes: forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer.Type: ApplicationFiled: January 28, 2015Publication date: July 30, 2015Inventors: Yoji IIZUKA, Yoshihiro KATO, Koji NEISHI, Hitoshi MIURA, Shinya KIKUTA, Yusaku KASHIWAGI, Hiroshi AMANO, Yoshio HONDA
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Patent number: 8865590Abstract: A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.Type: GrantFiled: June 16, 2010Date of Patent: October 21, 2014Assignees: Tokyo Electron Limited, National University Corporation Tohoku UniversityInventors: Kenji Matsumoto, Hitoshi Itoh, Hidenori Miyoshi, Shigetoshi Hosaka, Hiroshi Sato, Koji Neishi, Junichi Koike
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Patent number: 8859421Abstract: There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.Type: GrantFiled: October 6, 2011Date of Patent: October 14, 2014Assignees: Tokyo Electron Limited, Tohoku UniversityInventors: Koji Neishi, Junichi Koike, Kenji Matsumoto
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Patent number: 8394214Abstract: The present invention provides a method for processing a metal body which can turn a metal structure of the metal body into a finer grain structure thus obtaining the high strength and the high ductility. In a method or an apparatus for processing a metal body which turns the metal structure of the metal body into the finer grain structure by forming a low deformation resistance region where the deformation resistance is locally lowered in the metal body and by deforming the low deformation resistance region by shearing, using a non-low deformation resistance region forming means which forms a non-low deformation resistance region by increasing the deformation resistance which is lowered in the low deformation resistance region, the non-low deformation resistance region is formed along the low deformation resistance region.Type: GrantFiled: March 10, 2004Date of Patent: March 12, 2013Assignee: Rinascimetalli Ltd.Inventors: Katsuaki Nakamura, Zenji Horita, Koji Neishi, Michihiko Nakagaki, Kenji Kaneko
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Publication number: 20120219724Abstract: In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.Type: ApplicationFiled: September 17, 2010Publication date: August 30, 2012Applicants: TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITEDInventors: Koji Neishi, Junichi Koike, Kenji Matsumoto
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Patent number: 8247321Abstract: When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.Type: GrantFiled: January 20, 2009Date of Patent: August 21, 2012Assignees: Tokyo Electron Limited, National University Corporation Tohoku UniversityInventors: Kenji Matsumoto, Hitoshi Itoh, Hiroshi Sato, Junichi Koike, Koji Neishi
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Patent number: 8242015Abstract: On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.Type: GrantFiled: December 4, 2009Date of Patent: August 14, 2012Assignees: Tokyo Electron Limited, Tohoku UniversityInventors: Kenji Matsumoto, Hitoshi Itoh, Koji Neishi, Junichi Koike
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Publication number: 20120135612Abstract: A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.Type: ApplicationFiled: June 16, 2010Publication date: May 31, 2012Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITEDInventors: Kenji Matsumoto, Hitoshi Itoh, Hidenori Miyoshi, Shigetoshi Hosaka, Hiroshi Sato, Koji Neishi, Junichi Koike
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Publication number: 20120025380Abstract: There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.Type: ApplicationFiled: October 6, 2011Publication date: February 2, 2012Applicants: TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITEDInventors: Koji Neishi, Junichi Koike, Kenji Matsumoto
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Patent number: 8008184Abstract: A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.Type: GrantFiled: November 30, 2009Date of Patent: August 30, 2011Assignees: Tokyo Electron Limited, Tohoku UniversityInventors: Kenji Matsumoto, Shigetoshi Hosaka, Junichi Koike, Koji Neishi
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Publication number: 20110049718Abstract: When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.Type: ApplicationFiled: January 20, 2009Publication date: March 3, 2011Applicants: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITYInventors: Kenji Matsumoto, Hitoshi Itoh, Hiroshi Sato, Junichi Koike, Koji Neishi
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Publication number: 20100233876Abstract: In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film.Type: ApplicationFiled: June 8, 2007Publication date: September 16, 2010Applicants: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITYInventors: Kenji Matsumoto, Junichi Koike, Koji Neishi
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Publication number: 20100140802Abstract: On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.Type: ApplicationFiled: December 4, 2009Publication date: June 10, 2010Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITYInventors: Kenji MATSUMOTO, Hitoshi ITOH, Koji NEISHI, Junichi KOIKE
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Publication number: 20100112806Abstract: A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.Type: ApplicationFiled: November 30, 2009Publication date: May 6, 2010Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITYInventors: Kenji MATSUMOTO, Shigetoshi HOSAKA, Junichi KOIKE, Koji NEISHI
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Patent number: 7637136Abstract: A method of working metal in which the microstructure of metal body is rendered fine to thereby enhance the strength, ductility or homogeneity thereof; a metal body obtained by the metal working method; and a metal-containing ceramic body obtained by the metal working method. In this metal working method, the deformation resistance of metal body or metal-containing ceramic body (hereinafter referred to simply as “metal body”) is lowered locally to thereby form low deformation resistance regions in the metal body, and shear deformation of the low deformation resistance regions is effected so as to fine the microstructure of metal body. In particular, the metal body is formed in unidirectionally drawn configuration so as to produce low deformation resistance regions crossing the metal body.Type: GrantFiled: September 29, 2003Date of Patent: December 29, 2009Assignee: Rinascimetalli Ltd.Inventors: Zenji Horita, Katsuaki Nakamura, Koji Neishi, Michihiko Nakagaki, Kenji Kaneko
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Patent number: 7574888Abstract: A method of working metal in which the microstructure of metal body is rendered fine to thereby enhance the strength, ductility or homogeneity thereof; a metal body obtained by the metal working method; and a metal-containing ceramic body obtained by the metal working method. In this metal working method, the deformation resistance of metal body or metal-containing ceramic body (hereinafter referred to simply as “metal body”) is lowered locally to thereby form low deformation resistance regions in the metal body, and shear deformation of the low deformation resistance regions is effected so as to fine the microstructure of metal body. In particular, the metal body is formed in unidirectionally drawn configuration so as to produce low deformation resistance regions crossing the metal body.Type: GrantFiled: December 19, 2007Date of Patent: August 18, 2009Assignee: Rinascimetalli Ltd.Inventors: Zenji Horita, Katsuaki Nakamura, Koji Neishi, Michihiko Nakagaki, Kenji Kaneko
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Patent number: 7559221Abstract: A method of working metal in which the microstructure of metal body is rendered fine to thereby enhance the strength, ductility or homogeneity thereof; a metal body obtained by the metal working method; and a metal-containing ceramic body obtained by the metal working method. In this metal working method, the deformation resistance of metal body or metal-containing ceramic body (hereinafter referred to simply as “metal body”) is lowered locally to thereby form low deformation resistance regions in the metal body, and shear deformation of the low deformation resistance regions is effected so as to fine the microstructure of metal body. In particular, the metal body is formed in unidirectionally drawn configuration so as to produce low deformation resistance regions crossing the metal body.Type: GrantFiled: December 19, 2007Date of Patent: July 14, 2009Assignee: Rinascimetalli Ltd.Inventors: Zenji Horita, Katsuaki Nakamura, Koji Neishi, Michihiko Nakagaki, Kenji Kaneko