Patents by Inventor Koji Nil

Koji Nil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8269284
    Abstract: There are provided a method of manufacturing a semiconductor device which achieves a reduction in implantation masks, and such a semiconductor device. By implanting boron into NMOS regions using a resist mask and another resist mask as the implantation masks, p-type impurity regions serving as the halo regions of access transistors and drive transistors are formed. By further implanting phosphorus or arsenic into a PMOS region using another resist mask as the implantation mask, n-type impurity regions serving as the halo regions of load transistors are formed.
    Type: Grant
    Filed: February 2, 2011
    Date of Patent: September 18, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Koji Nil, Motoshige Igarashi