Abstract: A differential device for differentially distributing a driving force to axles along an axis is disclosed. The differential device has a case being capable of rotation about the axis, which includes a flange configured to receive the driving force and a shaft crossing the case perpendicularly to the axis; an opening defined by a peripheral border on an outer periphery of the case so as to allow access into the case, lateral extremities of which is deviated from a center of the shaft toward a direction opposite to the flange along the axis; and a differential gear set housed in and drivingly coupled to the case, the differential gear set including an input gear rotatable around the shaft and output gears so combined with the input gear as to differentially distribute the driving force to the output gears, the output gears being drivingly coupled to the axles.

Abstract: A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from each other and having a wider band gap than the substrate (3), and phosphors (15a, 15b, 15c, . . . ) converting wavelengths of light from the light-emitting-element-layers (10a, 10b, 10c, . . . ) into other wavelengths.

Abstract: A differential device for differentially distributing a driving force to axles along an axis is disclosed. The differential device has a case being capable of rotation about the axis, which includes a flange configured to receive the driving force and a shaft crossing the case perpendicularly to the axis; an opening defined by a peripheral border on an outer periphery of the case so as to allow access into the case, lateral extremities of which is deviated from a center of the shaft toward a direction opposite to the flange along the axis; and a differential gear set housed in and drivingly coupled to the case, the differential gear set including an input gear rotatable around the shaft and output gears so combined with the input gear as to differentially distribute the driving force to the output gears, the output gears being drivingly coupled to the axles.

Abstract: A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.

Abstract: A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from each other and having a wider band gap than the substrate (3), and phosphors (15a, 15b, 15c, . . . ) converting wavelengths of light from the light-emitting-element-layers (10a, 10b, 10c, . . . ) into other wavelengths.

Abstract: A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.

Abstract: A semiconductor substrate for a light-emitting diode, heterojunction transistor or the like. Included is a buffer region of an aluminum-containing nitride or the like grown epitaxially on a baseplate of silicon or a silicon compound. A dislocation-refracting region of an indium-containing nitride is grown epitaxially on the buffer region in order to provide a major surface having a multiplicity of protuberances of pyramidal shape capable of refracting the dislocations created in the buffer region. A leveling region of a nitride, not containing indium, is formed on the major surface of the dislocation refracting region in order to provide a major surface of greater levelness than the transition refracting region. The leveling region is reduced in dislocation density owing to the interposition of the dislocation refracting region between buffer region and leveling region.

Abstract: A current detector comprising a current-path conductor assembly and a Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic conductor holder molded in one piece therewith. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate, a set of leads electrically connected to the Hall generator, and a plastic encapsulation enveloping the Hall generator and parts of the leads. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly. The conductor holder and the encapsulation are shaped in interfitting relationship to each other, so that when they are united, the Hall generator is positioned to generate a Hall voltage in response to a magnetic field due to the current flowing through the current-path conductor.

Abstract: A semiconductor substrate for a light-emitting diode, heterojunction transistor or the like. Included is a buffer region of an aluminum-containing nitride or the like grown epitaxially on a baseplate of silicon or a silicon compound. A dislocation-refracting region of an indium-containing nitride is grown epitaxially on the buffer region in order to provide a major surface having a multiplicity of protuberances of pyramidal shape capable of refracting the dislocations created in the buffer region. A leveling region of a nitride, not containing indium, is formed on the major surface of the dislocation refracting region in order to provide a major surface of greater levelness than the transition refracting region. The leveling region is reduced in dislocation density owing to the interposition of the dislocation refracting region between buffer region and leveling region.

Abstract: A current detector has a semiconductor Hall-effect device having a primary semiconductor region where a Hall voltage develops in proportion to the magnitude of the current to be detected. A conductor strip for carrying this current is formed on the semiconductor substrate via a plurality of insulating layers so as to extend around the primary semiconductor region of the Hall-effect device. In order to protect the Hall-effect device from inductive noise, a shielding layer of molybdenum or the like is interposed between the semiconductor substrate and the conductor strip, preferably by being sandwiched between the insulating layers.

Abstract: A catalyst for the hydrocracking of heavy oils contains iron and active carbon having an MCH conversion rate of 40-80%, a specific surface area of 600-1000 m2/g of, a pore volume of 0.5 to 1.4 cm3/g, 2-50 nanometers' mesopore volume of not less than 60% and an average pore diameter of 3-6 nanometers, the iron being carried on the active carbon in an amount of 1 to 20 wt. % to the active carbon. The hydrocracking process using the catalyst includes a first step of conducting hydrocracking at a temperature within the range of 360-450° C. at a hydrogen partial pressure of 2-14 MPaG and a second step of conducting hydrocracking at a temperature within the range of 400-480° C. at a hydrogen partial pressure of 2-18 MPaG, which can suppress the generation of coke and remove, in a high efficiency, heavy metals such as Ni and V, asphaltene, residual carbon, sulfur and nitrogen from the heavy oils.

Abstract: A current detector for detecting or measuring an electric current includes two Hall effect devices each for generating a voltage proportional to magnetic field strength and two current path terminals for the inflow and outflow, respectively, of a current to be detected or measured.

Abstract: A current detector comprising a Hall generator assembly and a current-path conductor assembly. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate via a sheet of magnetic material such as Permalloy. A plastic encapsulation envelops at least parts of all the components of the Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic holder molded in one piece therewith. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly into a unitary casing for the current detector. A covering of Permalloy or the like envelopes the casing.

Abstract: A current detector having a Hall-effect device formed in a semiconductor substrate for giving an output voltage proportional to the magnitude of an electric current. Also included is a sheet-metal baseplate mechanically supporting the Hall-effect device. For handling a current of greater magnitude than heretofore, a U-shaped current path is defined in the baseplate as by cutting therein a J-shaped slit and a set of straight slits for bounding the opposite side edges of the path. The baseplate lies in sufficient proximity to the Hall-effect device to cause the same to develop a voltage indicative of the current magnitude on the current path.

Abstract: A current detector having a Hall-effect device formed in a semiconductor substrate for giving an output voltage proportional to the magnitude of an electric current. Also included is a sheet-metal baseplate mechanically supporting the Hall-effect device. For handling a current of greater magnitude than heretofore, a U-shaped current path is defined in the baseplate as by cutting therein a J-shaped slit and a set of straight slits for bounding the opposite side edges of the path. The baseplate lies in sufficient proximity to the Hall-effect device to cause the same to develop a voltage indicative of the current magnitude on the current path.

Abstract: A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.

Abstract: A current detector comprising a Hall generator assembly and a current-path conductor assembly. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate via a sheet of magnetic material such as Permalloy. A plastic encapsulation envelops at least parts of all the components of the Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic holder molded in one piece therewith. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly into a unitary casing for the current detector. A covering of Permalloy or the like envelopes the casing.

Abstract: A cooling structure for a rotating electric machine is proposed which displays high cooling performance with a simple structure, does not undergo reductions in efficiency when the rotating electric machine is operating at high rotation speeds and has high reliability. The rotating shaft of the rotating element comprises a hollow structure and an inner cylindrical section which rotates together with the rotating shaft is provided with a space in an inner section of the rotating shaft. Coolant flows in an annular gap between the rotating shaft and the inner cylindrical section. In this manner, the rotating element is effectively cooled with a small amount of coolant.

Abstract: A current detector comprising a current-path conductor assembly and a Hall generator assembly. The current-path conductor assembly includes a sheet-metal current-path conductor and a plastic conductor holder molded in one piece therewith. The Hall generator assembly includes a Hall generator in the form of a semiconductor chip mounted to a metal-made mounting plate, a set of leads electrically connected to the Hall generator, and a plastic encapsulation enveloping the Hall generator and parts of the leads. The Hall generator assembly and the current-path conductor assembly are combined by bonding together the encapsulation of the Hall generator assembly and the conductor holder of the current-path conductor assembly. The conductor holder and the encapsulation are shaped in interfitting relationship to each other, so that when they are united, the Hall generator is positioned to generate a Hall voltage in response to a magnetic field due to the current flowing through the current-path conductor.

Abstract: A current detector having a Hall-effect device formed in a semiconductor substrate for giving an output voltage proportional to the magnitude of an electric current. The detector has a first and a second current path terminal for the flow of the current to be detected. The two current path terminals are interconnected via two current paths having resistance values such that the current is divided at a prescribed ratio into two fractions on flowing into the current paths. While one current path directly interconnects the two terminals, the other path includes a conductor layer formed on the semiconductor substrate via an insulating layer so as to extend around the Hall-effect device. The magnitude of the complete current is detectable by the Hall-effect device from the current fraction flowing through the conductor layer. All but the terminals of the current detector is encapsulated to reduce a temperature difference between the two current paths to a minimum.