Abstract: The present invention provides an arithmetic unit comprising an input register for storing externally input digital data as a P-bit digital data, an output register for storing a Q-bit digital data, and an output bit selecting means. The output bit selecting means is operable to receive the P-bit digital data which is output from the input register as a first input data, and the Q-bit digital data which is output from the output register as a second input data. The output big selecting means is further operable to select bits, values of which bits are to be output, among bits of the first input data and bits of the second input data, in accordance with a control data which is input from outside. The output bit selecting means is still further operable to output Q-bit digital data comprising the values of the selected bits to the output register.

Abstract: The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato) ruthenium (III). The organic ruthenium compound which consists of cis or trans isomer can be isolated by the steps of preparing tris (2,4-octa-dionato) ruthenium (III) in any method, making the tris (2,4-octa-dionato) ruthenium (III) adsorbed on an adsorbent including alumina, bringing the adsorbent into contact with a first solvent to elute the trans isomer and then bringing the adsorbent into contact with a second solvent having a polarity higher than that of the first solvent to elute the cis isomer.

Abstract: The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato) ruthenium (III). The organic ruthenium compound which consists of cis or trans isomer can be isolated by the steps of preparing tris (2,4-octa-dionato) ruthenium (III) in any method, making the tris (2,4-octa-dionato) ruthenium (III) adsorbed on an adsorbent including alumina, bringing the adsorbent into contact with a first solvent to elute the trans isomer and then bringing the adsorbent into contact with a second solvent having a polarity higher than that of the first solvent to elute the cis isomer.

Abstract: The present invention provides an arithmetic unit comprising an input register for storing externally input digital data as a P-bit digital data, an output register for storing a Q-bit digital data, and an output bit selecting means. The output bit selecting means is operable to receive the P-bit digital data which is output from the input register as a first input data, and the Q-bit digital data which is output from the output register as a second input data. The output big selecting means is further operable to select bits, values of which bits are to be output, among bits of the first input data and bits of the second input data, in accordance with a control data which is input from outside. The output bit selecting means is still further operable to output Q-bit digital data comprising the values of the selected bits to the output register.

Abstract: A low coherence light of wide range is fed into a Fabry-Perot load cell having a measured clearance varied in response to physical quantities such as force and pressure or the like to modulate its wavelength. The measured clearance is calculated by the variable gap Fabry-Perot interferometer and the signal processing part in the optical sensor and further the physical quantities are measured.

Abstract: A projection type display apparatus wherein heat generated from a plurality of heat sources in an outer housing can be exhausted efficiently and the weight of the outer housing can be balanced readily in the leftward and rightward direction. A projection lens is disposed at a central location of a front wall of the outer housing, and first and second exhaust mechanisms including first and second exhaust fans for exhausting heat generated by a light source section in the outer housing and a setting power supply circuit board and a light source section power supply circuit board which serve as a power supply section independently of each other, respectively, are disposed on the opposite left and right sides of the optical unit in the outer housing. First and second exhaust ports of the first and second exhaust mechanisms are disposed on the opposite left and right sides of the projection lens in the front wall of the outer housing.

Abstract: The disclosed is a method of producing two organic ruthenium compounds; i.e., bis(ethylcyclopentadienyl)ruthenium and (alkylcyclopentadienyl)cyclopentadienylruthenium, which are useful for producing thin film through CVD. In one aspect, the invention provides a method for producing bis(ethylcyclopentadienyl)ruthenium, including hydrogenating bis(acetylcyclopentadienyl)ruthenium in the presence of a catalyst. In another aspect, the invention provides a method of producing (alkylcyclopentadienyl)cyclopentadienylruthenium, including acylating bis(cyclopentadienyl)ruthenium with carboxylic anhydride in the presence of phosphoric acid as a catalyst, to thereby produce (acylcyclopentadienyl)cyclopentadienylruthenium, and reducing the (acylcyclopentadienyl)cyclopentadienyl ruthenium.

Abstract: The present invention is directed to organic ruthenium compounds and organic platinum compounds which provide a constant film-forming rate and have excellent thermal stability. In the organic ruthenium compounds, at least one substituent in 5-membered rings contains an alkyl group selected from CH2CH3, CH2CH2CH3, CH2CH2CH2CH3, C(CH3)3, CH2(C6H5), COCH3, COOCH3, and CH2OCH3. In the organic platinum compounds, at least one substituent in the 5-membered ring of R1, R2, R3, R4, and R5 contains an alkyl group selected from CH3, CH2CH3, CH2CH2CH3, CH2CH2CH2CH3, C(CH3)3, and CH2(C6H5).

Abstract: A supply system of a compound for CVD is provided with not only an order-processing device, an inventory data base, and a charging-processing device but also an analyzing unit having an analysis information output unit capable of analyzing a spent compound that is returned from a customer, and outputting, as analysis information, at least a weight of an unreacted compound in the spent compound; a regenerating unit having a regeneration information output unit for separating an unreacted compound from a spent compound and refining a separated unreacted compound, and for outputting, as regeneration information, at least an amount of regenerated compound; and a stock-material information database for storing shipment information of the spent compound at the time of initial shipment. When a shipment request comes from a customer, an order-processing device judges whether shipment is possible based on the information of an inventory data base and performs shipment processing if the shipment is possible.

Abstract: A first organometallic compound is an organometallic compound for manufacturing a ruthenium film or a ruthenium compound film by a chemical vapor deposition process, wherein the organometallic compound is alkylcyclopentadienyl(cyclopentadienyl)ruthenium having a substituent of n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, tert-butyl group. A second organometallic compound is an organometallic compound for manufacturing an iridium film or an iridium oxide film by a chemical vapor deposition process, wherein the organometallic compound for chemical vapor deposition is alkylcyclopentadienyl(1,5-cyclooctadiene)iridium having a substituent of any alkyl group of n-propyl group, iso-propyl group, or n-butyl group, iso-butyl group, tert-butyl group.

Abstract: A first organometallic compound is an organometallic compound for manufacturing a ruthenium film or a ruthenium compound film by a chemical vapor deposition process, wherein the organometallic compound is alkylcyclopentadienyl(cyclopentadienyl)ruthenium having a substituent of n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, tert-butyl group. A second organometallic compound is an organometallic compound for manufacturing an iridium film or an iridium oxide film by a chemical vapor deposition process, wherein the organometallic compound for chemical vapor deposition is alkylcyclopentadienyl(1,5-cyclooctadiene)iridium having a substituent of any alkyl group of n-propyl group, iso-propyl group, or n-butyl group, iso-butyl group, tert-butyl group.

Abstract: A process for preparing a bis(alkylcyclopentadienyl) ruthenium comprising the step of reacting a ruthenium compound having an anion not containing chlorine with an alkylcyclopentadiene in an organic solvent. Particularly preferably, the ruthenium compound as a starting material is selected from ruthenium nitrate, ruthenium sulfate and ruthenium acetate. It is preferable that the reaction system contain zinc as a reducing agent. An appropriate temperature is −80 to 0° C.

Abstract: A cross detection part detects a zero-crossing point of a reproduction signal digitalized and a phase error estimation part uses the zero-crossing point of the reproduction signal for estimating a phase error thereof. At this time, a pattern detection part detects whether a variation pattern of the reproduction signal is a specified pattern (for example, a 3T pattern for the case of DVD disks) and controls a selection part to ensure that no phase error estimation value of low reliability is utilized for controlling of a PLL for clock recovery.

Abstract: In an apparatus and method of applying a protecting film to a semiconductor wafer, a semiconductor wafer is placed on top of a table, a protecting film is pressed onto the wafer by a press roller biased toward the table, the table is moved to apply the protecting film to the wafer, a tension roller arranged upstream from the press roller applies a tensile force to the protecting film in a direction opposite the feeding direction of the film, the tensile force of the tension roller is first set at a relatively high value at the beginning of the application of the protecting film to place the protecting film in a stretched state and then at a relatively small value during the application of the protecting film to prevent the portion of the protecting film which has not yet been applied from coming into contact with the wafer, and then, after the protecting film has been applied to the wafer, a cutting blade is used to cut the protecting film to match the shape of the semiconductor wafer by first moving the cutt

Abstract: In an apparatus and method of using an adhesive tape to remove a protecting sheet applied to a semiconductor wafer, a heat-sensitive adhesive tape is thermocompressively bonded by a heat tool to an edge portion of the protecting sheet, after which a cutting blade cuts the adhesive sheet to a prescribed length, and then a tape peeling head grasps the cut adhesive tape and moves in a direction to pull the adhesive tape so as to remove the protecting sheet of the semiconductor wafer, with the removed sheet then being disposed of together with the adhesive tape into a disposal box.

Abstract: A process for producing aluminum fluoride particles having a smooth surface, comprising the steps of adding aluminum fluoride seed crystals to a super-saturated solution of aluminium fluoride; allowing aluminum fluoride particles to be precipitated under heating and agitation; collecting the aluminium fluoride particles by filtration; and drying them, wherein: a super-saturated solution of aluminium fluoride containing 0.6 to 1.3 wt % of fluosilicic acid which is preferably obtained by reacting aluminum hydroxide with fluosilicic acid in an [Al(OH).sub.3 /H.sub.2 SiF.sub.6 ] molar ratio of 1.80 to 1.90 is used as the crystallization mother liquor.

Abstract: In an apparatus and method of applying a protecting film to a semiconductor wafer, a semiconductor wafer is placed on top of a table, a protecting film is pressed onto the wafer by a press roller biased toward the table, the table is moved to apply the protecting film to the wafer, a tension roller arranged upstream from the press roller applies a tensile force to the protecting film in a direction opposite the feeding direction of the film, the tensile force of the tension roller is first set at a relatively high value at the beginning of the application of the protecting film to place the protecting film in a stretched state and then at a relatively small value during the application of the protecting film to prevent the portion of the protecting film which has not yet been applied from coming into contact with the wafer, and then, after the protecting film has been applied to the wafer, a cutting blade is used to cut the protecting film to match the shape of the semiconductor wafer by first moving the cutt

Abstract: The arc-type evaporator of the present invention includes an anode and a cathode for generating arc discharging, a trigger electrode and a gas supply pipe. The trigger electrode is contacted with the cathode to cause a first spark, and thereafter is separated from the cathode to occur the arc discharge between the anode and the cathode. The gas supply pipe is provided independently of the trigger electrode, and supplies the cathode a reactive gas which reacts with a substance forming the cathode to produce a chemical compound. The gas supply pipe includes a gas blow-out port formed in the neighborhood of the side portion or rear side portion of the cathode to face the cathode. The reactive gas is supplied from the gas blow-out port to an area including the front surface of the cathode.

Abstract: A method of manufacturing aluminum fluoride anhydride by means of a wet method. This method is featured in that a seed crystal of AlF.sub.3.3H.sub.2 O containing not more than 5% of fine particle 40 .mu.m or less in diameter is added into the super-saturated solution of aluminum fluoride in such a ratio that the total surface area of the seed crystal is in the range of 40-100 m.sup.2 per 1 kg of AlF.sub.3.3H.sub.2 O to be precipitated until an initial concentration of the super-saturated solution is reduced to 1.6%. The initial concentration of the super-saturated solution is adjusted to 8 to 15%. Resultant slurry is heated under agitation, thereby precipitating in batch-wise large AlF.sub.3.3H.sub.2 O particles which are then separated, dried and dehydrated.

Abstract: Disclosed is cis-oxalato(trans-1-1,2-cyclohexanediamine) Pt(II) complex having high optical purity and no toxicity and exhibiting anticancer performance, as shown in the below Formula.Cis-oxalato(trans-1-1,2-cyclohexanediamine) Pt(II) complex of the invention possesses high optical purity or 99.94% or more e.e. and a melting point of 198.3.degree. to 199.7.degree. C. The complex is synthesized employing as starting material trans-1-1,2-cyclohexamediamine or a derivative of the trans-1-1,2-cyclohexanediamine optically resoluted by means of a high performance liquid chromatography.