Abstract: A supply system of a compound for CVD is provided with not only an order-processing device, an inventory data base, and a charging-processing device but also an analyzing unit having an analysis information output unit capable of analyzing a spent compound that is returned from a customer, and outputting, as analysis information, at least a weight of an unreacted compound in the spent compound; a regenerating unit having a regeneration information output unit for separating an unreacted compound from a spent compound and refining a separated unreacted compound, and for outputting, as regeneration information, at least an amount of regenerated compound; and a stock-material information database for storing shipment information of the spent compound at the time of initial shipment. When a shipment request comes from a customer, an order-processing device judges whether shipment is possible based on the information of an inventory data base and performs shipment processing if the shipment is possible.

Abstract: A first organometallic compound is an organometallic compound for manufacturing a ruthenium film or a ruthenium compound film by a chemical vapor deposition process, wherein the organometallic compound is alkylcyclopentadienyl(cyclopentadienyl)ruthenium having a substituent of n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, tert-butyl group. A second organometallic compound is an organometallic compound for manufacturing an iridium film or an iridium oxide film by a chemical vapor deposition process, wherein the organometallic compound for chemical vapor deposition is alkylcyclopentadienyl(1,5-cyclooctadiene)iridium having a substituent of any alkyl group of n-propyl group, iso-propyl group, or n-butyl group, iso-butyl group, tert-butyl group.

Abstract: A first organometallic compound is an organometallic compound for manufacturing a ruthenium film or a ruthenium compound film by a chemical vapor deposition process, wherein the organometallic compound is alkylcyclopentadienyl(cyclopentadienyl)ruthenium having a substituent of n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, tert-butyl group. A second organometallic compound is an organometallic compound for manufacturing an iridium film or an iridium oxide film by a chemical vapor deposition process, wherein the organometallic compound for chemical vapor deposition is alkylcyclopentadienyl(1,5-cyclooctadiene)iridium having a substituent of any alkyl group of n-propyl group, iso-propyl group, or n-butyl group, iso-butyl group, tert-butyl group.

Abstract: A process for preparing a bis(alkylcyclopentadienyl) ruthenium comprising the step of reacting a ruthenium compound having an anion not containing chlorine with an alkylcyclopentadiene in an organic solvent. Particularly preferably, the ruthenium compound as a starting material is selected from ruthenium nitrate, ruthenium sulfate and ruthenium acetate. It is preferable that the reaction system contain zinc as a reducing agent. An appropriate temperature is −80 to 0° C.

Abstract: A cross detection part detects a zero-crossing point of a reproduction signal digitalized and a phase error estimation part uses the zero-crossing point of the reproduction signal for estimating a phase error thereof. At this time, a pattern detection part detects whether a variation pattern of the reproduction signal is a specified pattern (for example, a 3T pattern for the case of DVD disks) and controls a selection part to ensure that no phase error estimation value of low reliability is utilized for controlling of a PLL for clock recovery.

Abstract: In an apparatus and method of applying a protecting film to a semiconductor wafer, a semiconductor wafer is placed on top of a table, a protecting film is pressed onto the wafer by a press roller biased toward the table, the table is moved to apply the protecting film to the wafer, a tension roller arranged upstream from the press roller applies a tensile force to the protecting film in a direction opposite the feeding direction of the film, the tensile force of the tension roller is first set at a relatively high value at the beginning of the application of the protecting film to place the protecting film in a stretched state and then at a relatively small value during the application of the protecting film to prevent the portion of the protecting film which has not yet been applied from coming into contact with the wafer, and then, after the protecting film has been applied to the wafer, a cutting blade is used to cut the protecting film to match the shape of the semiconductor wafer by first moving the cutt

Abstract: In an apparatus and method of using an adhesive tape to remove a protecting sheet applied to a semiconductor wafer, a heat-sensitive adhesive tape is thermocompressively bonded by a heat tool to an edge portion of the protecting sheet, after which a cutting blade cuts the adhesive sheet to a prescribed length, and then a tape peeling head grasps the cut adhesive tape and moves in a direction to pull the adhesive tape so as to remove the protecting sheet of the semiconductor wafer, with the removed sheet then being disposed of together with the adhesive tape into a disposal box.

Abstract: In an apparatus and method of applying a protecting film to a semiconductor wafer, a semiconductor wafer is placed on top of a table, a protecting film is pressed onto the wafer by a press roller biased toward the table, the table is moved to apply the protecting film to the wafer, a tension roller arranged upstream from the press roller applies a tensile force to the protecting film in a direction opposite the feeding direction of the film, the tensile force of the tension roller is first set at a relatively high value at the beginning of the application of the protecting film to place the protecting film in a stretched state and then at a relatively small value during the application of the protecting film to prevent the portion of the protecting film which has not yet been applied from coming into contact with the wafer, and then, after the protecting film has been applied to the wafer, a cutting blade is used to cut the protecting film to match the shape of the semiconductor wafer by first moving the cutt

Abstract: A process for producing aluminum fluoride particles having a smooth surface, comprising the steps of adding aluminum fluoride seed crystals to a super-saturated solution of aluminium fluoride; allowing aluminum fluoride particles to be precipitated under heating and agitation; collecting the aluminium fluoride particles by filtration; and drying them, wherein: a super-saturated solution of aluminium fluoride containing 0.6 to 1.3 wt % of fluosilicic acid which is preferably obtained by reacting aluminum hydroxide with fluosilicic acid in an [Al(OH).sub.3 /H.sub.2 SiF.sub.6 ] molar ratio of 1.80 to 1.90 is used as the crystallization mother liquor.

Abstract: The arc-type evaporator of the present invention includes an anode and a cathode for generating arc discharging, a trigger electrode and a gas supply pipe. The trigger electrode is contacted with the cathode to cause a first spark, and thereafter is separated from the cathode to occur the arc discharge between the anode and the cathode. The gas supply pipe is provided independently of the trigger electrode, and supplies the cathode a reactive gas which reacts with a substance forming the cathode to produce a chemical compound. The gas supply pipe includes a gas blow-out port formed in the neighborhood of the side portion or rear side portion of the cathode to face the cathode. The reactive gas is supplied from the gas blow-out port to an area including the front surface of the cathode.

Abstract: A method of manufacturing aluminum fluoride anhydride by means of a wet method. This method is featured in that a seed crystal of AlF.sub.3.3H.sub.2 O containing not more than 5% of fine particle 40 .mu.m or less in diameter is added into the super-saturated solution of aluminum fluoride in such a ratio that the total surface area of the seed crystal is in the range of 40-100 m.sup.2 per 1 kg of AlF.sub.3.3H.sub.2 O to be precipitated until an initial concentration of the super-saturated solution is reduced to 1.6%. The initial concentration of the super-saturated solution is adjusted to 8 to 15%. Resultant slurry is heated under agitation, thereby precipitating in batch-wise large AlF.sub.3.3H.sub.2 O particles which are then separated, dried and dehydrated.

Abstract: Disclosed is cis-oxalato(trans-1-1,2-cyclohexanediamine) Pt(II) complex having high optical purity and no toxicity and exhibiting anticancer performance, as shown in the below Formula.Cis-oxalato(trans-1-1,2-cyclohexanediamine) Pt(II) complex of the invention possesses high optical purity or 99.94% or more e.e. and a melting point of 198.3.degree. to 199.7.degree. C. The complex is synthesized employing as starting material trans-1-1,2-cyclohexamediamine or a derivative of the trans-1-1,2-cyclohexanediamine optically resoluted by means of a high performance liquid chromatography.

Abstract: Disclosed herein is cis-oxalato (trans-1-1,2-cyclohexanediamine) Pt(II) optically high purity. Because of its complete optical purity, the compound is effective as raw material of such a medicine as a carcinostatic agent. The complete optical purity of the above compound may be proved by comparing the respective melting points of the cis-oxalato (trans-1-1,2-cyclohexanediamine).

Abstract: Disclosed herein is a process of optically resoluting optically active platinum complex compounds which comprises optically resoluting a d-isomer and an 1-isomer of a cis-Pt(II) complex of a 1,2-cyclohexanediamine isomer characterized in that the mixture of the d-isomer and the 1-isomer is optically resoluted by means of high performance liquid chromatography employing a column packed with a chiral filler.The chiral filler include, for example, a cellulose ester derivative, a cellulose carbamate derivative, an amylose carbamate derivative, a polymethacryl acid ester and .beta.- and .gamma.-cyclodextrin.According to the present invention, the optical resolution of a platinum complex compound essentially consisting of the mixture of two optical isomers which cannot be resoluted in accordance with a normal resolution method due to the small structural difference can be easily performed utilizing the characteristics of a chiral filler.

Abstract: Disclosed herein are a platinum compound employed as raw material of medicines having carcinostatic effects, and a process of preparing the platinum compound. The platinum compound (I) substantially free from impurities can be prepared through a reaction between the corresponding dihalogen compound and an organic dibasic acid employing an iodine compound utilizing the difference of solubilities between the desired compound and the iodine compounds.

Abstract: A method of forming a diamond film on a substrate wherein hydrogen, a hydrocarbon series gas, an inert gas, an organic compound series gas or a mixture of such gases is introduced into a vacuum vessel to contact a substrate and carbon is evaporated by are discharge at a carbon cathode while applying a voltage to the substrate to deposit carbon on the substrate thus forming a diamond film on the substrate. A silicon series gas, a germanium series gas or a mixture thereof may be also introduced into the vessel with the foregoing gas or gases. While the carbon is being deposited on the substrate, thermoelectrons may also be supplied onto the substrate, and, further, high frequency discharge may be generated in a space between the substrate and the cathodes.

Abstract: A sputtering system including a workpiece and at least one target located in a vacuum reaction furnace, wherein a magnetic field is generated between the workpiece and the target and a electric field perpendicular to the magnetic field generated between the workpiece and the target is additionally generated. A plurality of targets may be located around the workpiece and either the workpiece or the targets may be rotated when the magnetron discharge is generated.

Abstract: An articulation detector for articulators of the kind wherein condylar elements mounted on a lower jaw member and glenoid fossae assemblies of an upper jaw member are made of a conductive material, comprises an electric power source, a luminous element and a pair of detecting electrode, all of which are connected in series. The electrodes are adapted to be connected to the lower jaw member and an incisal pin mounted on the upper jaw member of the articulator when the detector is in use. The adjustment of the articulator or prosthetic appliances may be detected by observing the light emitted from the luminous element.

Abstract: New platinum complex represented by the general formula [I]: ##STR1## wherein R.sub.1 and R.sub.2 are same and represent halogen atom or NO.sub.3,orR.sub.1 is SO.sub.4 and R.sub.2 is H.sub.2 O,orR.sub.1 and R.sub.2 are bonded with each other to form either ##STR2## and the configuration of 1-aminomethyl-2-aminocyclohexane is selected from trans-1, trans-d, cis-1 and cis-d.The compounds of the formula [I] are active against tumor and are expected to be useful as medicaments.