Abstract: The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them with a sense current applied in a stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. The first shield layer and the second shield layer are each controlled by magnetization direction control means in terms of magnetization direction to create an antiparallel magnetization state where their magnetizations are in opposite directions.

Abstract: The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device.

Abstract: A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.

Abstract: Provided is a manufacturing method of heat-assisted magnetic recording head, in which a light source unit can be easily joined to a slider with sufficiently high accuracy, under avoiding the excessive mechanical stress. The manufacturing method comprises the steps of: moving relatively the light source unit and the slider, while applying a sufficient voltage between an upper electrode of the light source and an electrode layer provided in the slider; and setting the light source unit and the slider in desired positions in a direction perpendicular to the element-integration surface of the slider substrate. The desired positions are positions where the light source just emits due to a surface contact between: the protruded portion of the lower surface of the light source; and the upper surface of the electrode layer, which is a portion of the wall surface of a step formed on the head part.

Abstract: Provided is a heat-assisted magnetic recording head constituted of a light source unit and a slider, which can be easily joined to each other with sufficiently high accuracy of joining position. The slider comprises a head part including a waveguide having an incident center on its end. The surface including an emission center of the light source is protruded from a joining surface of the unit substrate. And a step is provided on an end surface of the head part. The protruded portion of a lower surface of the light source has a surface contact with a wall surface of the step. Further, the distance between the wall surface of the step and the incident center of the waveguide is set to be equal to the distance between the emission center of the light source and the protruded portion of the lower surface of the light source.

Abstract: A method for inspecting magnetic characteristics of a thin film magnetic head that is arranged in a row bar includes: a step of preparing a row bar having sliders including a thin film magnetic head formed therein and lapping guides having magnetoresistance effect; a step of preparing a magnetic field applying row bar having first and second magnetic field applying elements; a first positioning step in which said magnetic field applying row bar is arranged opposite to said row bar; a second positioning step in which a relative movement between said magnetic field applying row bar and said row bar is made so that at least one of said lapping guides exhibits a largest output voltage; and a measurement step in which a relationship between the intensity of the magnetic field and an output voltage of a magnetic field sensor is obtained.

Abstract: A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

Abstract: A magneto-resistance effect element comprises: a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer whose magnetization directions change in accordance with an external magnetic field, a non-magnetic intermediate layer sandwiched between the upper and lower magnetic layers; an upper shield electrode layer and a lower shield electrode layer which are provided to sandwich the magneto-resistance effect stack therebetween in the direction of stacking the magneto-resistance effect stack, wherein the upper shield electrode layer and the lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield the magneto-resistance effect stack; a first bias magnetic layer which is provided on a surface of the magneto-resistance effect stack opposite to an air bearing surface, and wherein the first bias magnetic layer is magnetized in a direction perpendicular to said air bearing surface; and a pair of second bias magnetic layers provided on re

Abstract: A magneto-resistance effect element comprises; a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer in which respective magnetization directions change in accordance with an external magnetic field, a non-magnetic intermediate layer sandwiched between the upper and lower magnetic layers, an upper gap adjustment layer and a lower gap adjustment layer provided at respective ends in the direction of stacking the magneto-resistance effect stack, an upper exchange coupling transmission layer configured to generate exchange coupling between the upper magnetic layer and the upper gap adjustment layer, and a lower exchange coupling transmission layer configured to generate exchange coupling between the lower magnetic layer and the lower gap adjustment layer; an upper shield electrode layer and a lower shield electrode layer which are provided to sandwich the magneto-resistance effect stack therebetween in the direction of stacking the magneto-resistance effect stack, wherein

Abstract: A magnetic field detecting element includes: first and second free layers whose magnetization directions change in accordance with an external magnetic field; a spacer layer that is sandwiched between the first and second free layers; a first exchange coupling transmitting layer that is located adjacent to a surface of first free layer, the surface of first free layer 53 being opposite to a surface of the first free layer which is located adjacent to the spacer layer; a first pinned layer which is provided such that the first pinned layer and the first free layer sandwich the first exchange coupling transmitting layer and which is exchange-coupled to first free layer via the first exchange coupling transmitting layer; a second exchange coupling transmitting layer that is located adjacent to a surface of the second free layer, the surface of the second free layer being opposite to a surface of the second free layer which is located adjacent to the spacer layer; a second pinned layer which is provided such that

Abstract: The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them from above and below, with a sense current applied in the stacking direction, wherein said magnetoresistive unit comprises a non-magnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them.

Abstract: A thermally assisted magnetic head includes a main magnetic pole for writing and a near-field light generator provided near the main magnetic pole, the near-field light generator having a non-magnetic base metal layer, a non-magnetic upper metal layer, an intermediate insulating layer interposed between the base metal layer and the upper metal layer, and the base metal layer having a V-shaped groove and also the upper metal layer having a projection facing the deepest part in the groove of the base metal layer, in a vertical cross-section parallel to a medium facing surface.

Abstract: A method comprises a first multilayer body forming step of forming a first multilayer body on a first cladding layer, the first multilayer body including a core layer and a first polishing stop layer in order from the first cladding layer side; a first multilayer body patterning step of pattering the first multilayer body, so as to expose the first cladding layer about the patterned first multilayer body; a second multilayer body forming step of forming a second multilayer body on the exposed first cladding layer and patterned first multilayer body, the second multilayer body including a second cladding layer and a second polishing stop layer in order from the first cladding layer side; and a removing step of polishing away a part of the second multilayer body formed on the first multilayer body.

Abstract: The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein said magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is interposed between them, wherein said first shield layer, and said second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and said first ferromagnetic layer, and said second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of said first shield layer and said second shield l

Abstract: A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.

Abstract: The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic l

Abstract: A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.

Abstract: A method comprises an opposing step of arranging a light-shielding film 50 having a recessed surface 52 and a pinhole 54 formed within the recessed surface 52 such that an end face 54X of the pinhole 54 of the light-shielding film 50 on the recessed surface 52 side and a light exit surface 4B oppose each other, while the shortest distance A52 between the light-shielding film 50 and a medium-opposing surface S in a thickness direction of the light-shielding film 50 is shorter than the shortest distance A54 between the end face 54X of the pinhole 54 on the side opposite from a transparent substrate 58 and the light exit surface 4B; a light-emitting step of causing a light-emitting device 3 to emit emission light 3A; and a detecting step of detecting the light transmitted through the pinhole 54 after being emitted from the light exit surface 4B.

Abstract: When first and second near-field light-generating portions are irradiated with laser light or other energy rays, near-field light is generated at the tips of both the near-field light-generating portions. By means of the near-field light thus generated, a magnetic recording medium opposing the medium-opposing surface is heated, and the coercivity of the magnetic recording medium is lowered. Since at least a portion of the main magnetic pole is positioned within the spot region including the region between the first and second near-field light-generating portions, the tips of both the near-field light-generating portions and the main magnetic pole can be brought extremely close together, and high-density recording can be performed.

Abstract: In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure.