Abstract: The Raman scattering spectroscopic method according to the present invention include: preparing a chip having a channel in which a nanostructure is formed; introducing an analyte solution into a part of the channel in the chip; irradiating an interface of the analyte solution with a laser beam; and measuring Raman scattering light induced by the irradiation of the laser beam. The measurement may be performed, with a fixed laser beam irradiation position, both in a state where the interface of the analyte solution is included in the laser-beam-irradiation area and in a state where the interface of the analyte solution is not included in the laser-beam-irradiation area, or may be performed keeping the state where the interface of the analyte solution is maintained in the laser-beam-irradiation area by controlling the laser-beam-irradiation area according to the movement of the interface due to evaporation of the analyte solution.

Abstract: The present invention provides a single-beam double-physical-effect coordinating and distributing method applicable to uniform laser shock and application thereof, and belongs to the technical field of laser shock effect control. The present invention does not stipulate the specific adjusting and distributing mean, and only provides a coordinating principle and method. The present invention gives a universal and systematic method for setting absorption layer feature parameters applicable to mass laser shock uniform peening under a liquid constraint condition, so as to facilitate the relevant technician to quickly obtain the liquid constraint laser shock processing technology conforming to a distribution proportion of its double physical effects, thereby being beneficial to development and application of the laser shock peening treatment, and therefore having the good actual application value.

Abstract: A shape with a substantially perfect circle is obtained as a processed shape such as a modified shape or a worked shape at a light focus point in a cross-section in a direction parallel to an advance direction of a femtosecond laser light beam. A section in a direction perpendicular to an advance direction of a laser light beam emitted from a femtosecond laser (10) is formed in a predetermined shaped. The laser light of which sectional shape in the direction perpendicular to the advance direction is formed in the predetermined shape is entered into a lens (14). The light is focused by the lens inside a transparent material (100) and processes the inside of the transparent material.

Abstract: A shape with a substantially perfect circle is obtained as a processed shape such as a modified shape or a worked shape at a light focus point in a cross-section in a direction parallel to an advance direction of a femtosecond laser light beam. A section in a direction perpendicular to an advance direction of a laser light beam emitted from a femtosecond laser (10) is formed in a predetermined shaped. The laser light of which sectional shape in the direction perpendicular to the advance direction is formed in the predetermined shape is entered into a lens (14). The light is focused by the lens inside a transparent material (100) and processes the inside of the transparent material.

Abstract: A shape with a substantially perfect sphere, or a cross-sectional shape with a substantially perfect circle in a direction parallel to an advance direction of a femtosecond laser light beam, is obtained as a processed shape such as a modified shape of a worked shape. Rays of femtosecond laser light (L1, L2) are entered into lenses (16, 20), respectively, and the rays of laser light are focused inside a transparent material (100) by the lenses such that each of the optical axes of the rays has a predetermined angle. The light focus positions of the rays of femtosecond laser light are superposed inside the transparent material and the inside of the material is processed.

Abstract: In order to provide a grism wherein even if the vertex angle of a prism increases, it does not exceed its critical angle, besides, which can elevate its efficiency, and mass-production of which is possible, whereby reduction in cost of which can be realized. The grism comprises a first prism having a high refractive index, a second prism having a high refractive index, and a volume phase grating used for a diffraction grating; and the vertex angle of the first prism being opposed to the vertex angle of the second prism so as to sandwich the volume phase grating between the first prism and the second prism.

Abstract: A method for controlling an index of refraction of silica glass, and in particular quartz glass, is disclosed. The method for controlling the index of refraction of silica glass includes the use of a vacuum ultraviolet laser beam having the same or shorter wavelength absorbable by the silica glass. The vacuum ultraviolet laser beam is irradiated to the silica glass to cause photodissociation of a Si—O bond at the point of irradiation. An index of refraction may also be altered using a vacuum ultraviolet laser beam having a longer wavelength absorbable by the silica glass.

Abstract: A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.

Abstract: In order to provide a grism wherein even if the vertex angle of a prism increases, it does not exceed its critical angle, besides, which can elevate its efficiency, and mass-production of which is possible, whereby reduction in cost of which can be realized. The grism comprises a first prism having a high refractive index, a second prism having a high refractive index, and a volume phase grating used for a diffraction grating; and the vertex angle of the first prism being opposed to the vertex angle of the second prism so as to sandwich the volume phase grating between the first prism and the second prism.

Abstract: A method for controlling an index of refraction of silica glass, and in particular quartz glass, is disclosed. The method for controlling the index of refraction of silica glass includes the use of a vacuum ultraviolet laser beam having the same or shorter wavelength absorbable by the silica glass. The vacuum ultraviolet laser beam is irradiated to the silica glass to cause photodissociation of a Si-O bond at the point of irradiation. An index of refraction may also be altered using a vacuum ultraviolet laser beam having a longer wavelength absorbable by the silica glass.

Abstract: A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.

Abstract: In order to form a fine pattern at high speed with respect to a material such as quartz glass exhibiting a remarkable band gap, having a short wavelength at absorption edge of light, and having high bond energy between constituent atoms, laser beam being transparent as to a material to be worked is irradiated thereupon, at the same time, plasma is produced at a place close to an objective surface of the material to be worked, and ablation is generated on the objective surface of the material to be worked by means of interactions between the plasma and laser beam irradiated upon the material to be worked, thereby to work the material.