Patents by Inventor Koji TAKAKI

Koji TAKAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 10916635
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor portion, a gate electrode, a source electrode, a first structure body, and a first insulating portion. The semiconductor portion includes SiC and includes first to third semiconductor regions. The first semiconductor region includes first to third partial regions. The second partial region is provided between the third partial region and the first partial region. The third semiconductor region is provided between the second partial region and the second semiconductor region. The source electrode is electrically connected to the second semiconductor region. The first insulating portion includes a first insulating region and a second insulating region. The first insulating region is provided between the first partial region and the gate electrode. The second insulating region is provided between the second semiconductor region and the first structure body. The first structure body includes at least one of polysilicon or TiN.
    Type: Grant
    Filed: March 17, 2019
    Date of Patent: February 9, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuyuki Ito, Koji Takaki, Hidehiko Yabuhara
  • SEMICONDUCTOR DEVICE
    Publication number: 20190348518
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor portion, a gate electrode, a source electrode, a first structure body, and a first insulating portion. The semiconductor portion includes SiC and includes first to third semiconductor regions. The first semiconductor region includes first to third partial regions. The second partial region is provided between the third partial region and the first partial region. The third semiconductor region is provided between the second partial region and the second semiconductor region. The source electrode is electrically connected to the second semiconductor region. The first insulating portion includes a first insulating region and a second insulating region. The first insulating region is provided between the first partial region and the gate electrode. The second insulating region is provided between the second semiconductor region and the first structure body. The first structure body includes at least one of polysilicon or TiN.
    Type: Application
    Filed: March 17, 2019
    Publication date: November 14, 2019
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuyuki ITO, Koji TAKAKI, Hidehiko YABUHARA