Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).

Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).

Abstract: A light shielding film, a halftone film, an etching stopper film and a transparent substrate are dry etched to form a hole penetrating the films and extending in the substrate through a main surface thereof to a prescribed depth. The etching stopper film is formed of a material significantly high in selectivity relative to the substrate under a condition for etching the substrate. This prevents the etching stopper film and the substrate in the step of etching the substrate from being etched to extend a geometry of a pattern in a direction parallel to the substrate's main surface.

Abstract: When a unit figure (F1) is divided by a provisional stripe boundary (C12) into a first portion (F11) and a second portion (F12), and besides, when width (W1) of the first portion (F11) is smaller than a predetermined threshold value (0.40 &mgr;m), the provisional stripe boundary (C12) is partly shifted in a position where the unit figure (F1) is described such that the first portion (F11) belongs to a provisional stripe region (R2). That is, provisional stripe regions (R1, R2) are corrected to obtain formal stripe regions (R1a, R2a). As a result, the unit figure (F1) belongs to the formal stripe region (R2a) as a whole. The writing section 3 then writes a pattern on a target of writing (6) based on pattern data (D2) in which the formal stripe regions (R1a, R2a) are defined.

Abstract: A first region of an object (10) to be written corresponding to a shot region (H1) is irradiated with an electron beam (11) for a standard shot period (T1). A pattern (M1) is thereby written in the first region of the object (10) to be written. Next, a second region of the object (10) to be written corresponding to a shot region (H2) is irradiated with the electron beam (11) for a shot period (T2) which is determined according to the shot size of the second region. A pattern (M2) is thereby written in the second region of the object (10) to be written. Owing to the correction of shot period, the finished dimension of the pattern M2 is the same as the designed dimension thereof with respect to the Y direction.

Abstract: By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an &agr;-methyl styrene compound and an &agr;-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.

Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).

Abstract: A photolithography mask having monitoring marks, which is suitable for correctly monitoring the dimensions of patterns that are intended for transfer, and its manufacturing method. The photolithography mask is manufactured by plotting mask patterns that are designed on a data address unit basis by using a prescribed plotting address unit that is larger the data address unit. Monitoring marks are formed so as to correspond to all plotting grids, respectively, that are necessary for plotting of all mask patterns. Pattern edges plotted by using all different plotting grids are distributed to the monitoring marks, respectively.

Abstract: By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an &agr;-methyl styrene compound and an &agr;-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.