Abstract: A semiconductor device includes a semiconductor substrate, a gate electrode, a dummy gate electrode, and a first impurity diffusion region. The semiconductor substrate has first and second grooves. The gate electrode is in the first groove. The dummy gate electrode is in the second groove. The dummy gate electrode has a first top surface. The first impurity diffusion region in the semiconductor substrate is positioned between the first and second grooves. The first top surface is positioned at a lower level than a bottom of the first impurity diffusion region.

Abstract: Provided is a semiconductor device wherein chip size is reduced, while potential on the dummy word lines is fixed. The semiconductor device is provided with: a memory cell array including a plurality of memory cells, a plurality of word lines for controlling memory operations of the plurality of memory cells, and a plurality of dummy word lines that do not participate in memory operations of the plurality of memory cells; and a guard ring surrounding the memory cell array. The plurality of dummy word lines are electrically fixed to the guard ring.

Abstract: A semiconductor device includes, on one semiconductor substrate: a first element isolation region having a first width, wherein a liner oxide film, a liner nitride film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of the first element isolation region; and a second element isolation region having a second width that is larger than the first width, wherein a liner oxide film and a silicon dioxide film are provided in succession from an outer peripheral side of an upper surface of the second element isolation region.

Abstract: A tantalum-containing tin oxide for a fuel cell electrode material, comprising tin oxide containing tantalum. The tantalum content is 0.001-30 mol %. When the tantalum-containing tin oxide is measured by x-ray diffraction, the value for [ITa205/ISnO2]DOPE is smaller than the value for [ITa205/ISnO2]MIX. In addition to the tin oxide particles containing tantalum, ideally a tantalum oxide is present on the surface of the particles. Also, ideally the tantalum oxide is crystalline.

Abstract: Provided is a semiconductor device wherein chip size is reduced, while potential on the dummy word lines is fixed. The semiconductor device is provided with: a memory cell array including a plurality of memory cells, a plurality of word lines for controlling memory operations of the plurality of memory cells, and a plurality of dummy word lines that do not participate in memory operations of the plurality of memory cells; and a guard ring surrounding the memory cell array. The plurality of dummy word lines are electrically fixed to the guard ring.

Abstract: A biomass-mixed-firing pulverized coal fired boiler includes: a furnace for burning biomass fuel together with pulverized coal in a mixed state; a pulverized coal burner for supplying the pulverized coal into the furnace; a biomass burner for supplying the biomass fuel into the furnace; a biomass mill for milling the biomass fuel to be supplied to the biomass burner; a dry clinker processing unit provided below the furnace and including a clinker conveyor for carrying ashes discharged from the furnace at a furnace bottom; and a combustion-air supply unit for supplying combustion air toward the ashes discharged at the furnace bottom on the clinker conveyor, thereby to burn an unburned component of the biomass fuel contained in the ashes discharged at the furnace bottom on the clinker conveyor.

Abstract: Disclosed herein are: a method for producing a resin composite material in which a carbon material having a graphene structure is dispersed in a synthetic resin and which has high mechanical strength; and a resin composite material obtained by the method. More specifically, disclosed herein are: a method for producing a resin composite material in which a carbon material having a graphene structure is uniformly dispersed in a synthetic resin selected from the group consisting of a crystalline resin and an amorphous resin, the method comprising, when the synthetic resin is a crystalline resin, shear-kneading the crystalline resin and the carbon material with a shear-kneading device at a temperature lower than a melting point of the crystalline resin and, when the synthetic resin is an amorphous resin, shear-kneading the amorphous resin and the carbon material with a shear-kneading device at a temperature close to a Tg of the crystalline resin; and a resin composite material obtained by the production method.

Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure.

Abstract: A biomass-mixed, pulverized coal-fired burner is provided. The biomass-mixed, pulverized coal-fired burner is capable of burning biomass fuel as auxiliary fuel in large quantities and burning only pulverized coal when the biomass fuel is not sufficiently available. The biomass-mixed, pulverized coal-fired burner includes: a biomass fuel jet nozzle that extends axially along the biomass-mixed, pulverized coal-fired burner; a pulverized coal fuel jet nozzle that surrounds the biomass fuel jet nozzle; a secondary air nozzle that surrounds the pulverized coal fuel jet nozzle; and a tertiary air nozzle that surrounds the secondary air nozzle. A biomass fuel stream is jetted into an inside of a pulverized coal fuel flame formed in a furnace, the flame offering favorable ignition and flame holding performance.

Abstract: A biomass-mixed, pulverized coal-fired burner is provided, capable of burning biomass fuel as auxiliary fuel in large quantities and burning only pulverized coal when the biomass fuel is not sufficiently available. The biomass-mixed, pulverized coal-fired burner includes a biomass fuel jet nozzle that extends axially along the biomass-mixed, pulverized coal-fired burner, a fuel jet nozzle that is open midway in the biomass fuel jet nozzle, a secondary air nozzle that surrounds the fuel jet nozzle, and a tertiary air nozzle that surrounds the secondary air nozzle. A pulverized coal component in a fuel stream as a mixture of the pulverized coal fuel stream and the biomass fuel stream is distributed with a higher concentration on an outer circumferential wall side and a biomass fuel component in the fuel stream is distributed inside of the pulverized coal fuel component.

Abstract: The present invention provides a biomass combustion burner applied to a pulverized coal-fired boiler to burn biomass fuel, a biomass-mixed fired boiler that reduces an amount of CO2 derived from fossil fuels, and a method for burning biomass fuel using the foregoing. The biomass combustion burner includes a biomass fuel jet nozzle having a fuel jet port that jets biomass fuel conveyed by primary air; a secondary air nozzle having a secondary air jet port that surrounds the fuel jet port; and a tertiary air nozzle having a tertiary air jet port that surrounds the secondary air jet port. The biomass fuel jet nozzle includes a fuel concentration adjusting section that changes a biomass fuel stream into a swirl flow to thereby make a fuel concentration higher on an outer circumferential portion side; and a degree-of-swirl adjusting plate that reduces a degree of swirl of a jetting fuel stream.

Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure.

Abstract: A method of manufacturing a semiconductor device includes forming an insulating isolation portion in a groove of a substrate, forming a projection portion in which an upper portion of the insulating isolation portion projects from a principal surface of the substrate, forming a sidewall spacer covering a side surface of the projection portion and part of the principal surface of the substrate along the side surface of the projection portion, and forming a first trench in the substrate by etching the substrate using the sidewall spacer as a mask.

Abstract: A semiconductor device includes a semiconductor substrate having a memory cell region and a peripheral circuit region; a bit line extending over the memory cell region and the peripheral circuit region, the bit line including a first portion in the peripheral circuit region; and a sense amplifier in the peripheral circuit region. The sense amplifier includes a transistor having a gate electrode which includes the first portion of the bit line.

Abstract: A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region.

Abstract: Disclosed herein are: a method for producing a resin composite material in which a carbon material having a graphene structure is dispersed in a synthetic resin and which has high mechanical strength; and a resin composite material obtained by the method. More specifically, disclosed herein are: a method for producing a resin composite material in which a carbon material having a graphene structure is uniformly dispersed in a synthetic resin selected from the group consisting of a crystalline resin and an amorphous resin, the method comprising, when the synthetic resin is a crystalline resin, shear-kneading the crystalline resin and the carbon material with a shear-kneading device at a temperature lower than a melting point of the crystalline resin and, when the synthetic resin is an amorphous resin, shear-kneading the amorphous resin and the carbon material with a shear-kneading device at a temperature close to a Tg of the crystalline resin; and a resin composite material obtained by the production method.

Abstract: A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region.

Abstract: There are provided a multilayered resin molded body having high filler orientability and high mechanical strength, and a method for manufacturing the same. A multilayered resin molded body (1) comprising a plurality of laminated resin composition layers (11) comprising a thermoplastic resin (11a) and a filler (15) comprising a carbon material having a graphene structure, the filler (15) being dispersed in the thermoplastic resin (11a), wherein an angle formed by a longitudinal direction of each filler (15) and a direction that is an average of longitudinal directions of all fillers (15) is ±6° or less, and a method for manufacturing the multilayered resin molded body (1).

Abstract: Provided is a resin composite material in which a carbon material with a graphene structure is dispersed in a synthetic resin and which has a high mechanical strength and a low linear expansion coefficient and a method for producing the resin composite material. A resin composite material contains a synthetic resin and a carbon material with a graphene structure dispersed in the synthetic resin, wherein the synthetic resin is grafted onto the carbon material and the grafting ratio thereof onto the carbon material is 5% to 3300% by weight. A method for producing a resin composite material includes the steps of: preparing a resin composite containing a synthetic resin and a carbon material with a graphene structure dispersed in the synthetic resin; and grafting the synthetic resin onto the carbon material concurrently with or after the step of preparing the resin composite.

Abstract: A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure.