Patents by Inventor Koji Tateno
Koji Tateno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10263522Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: GrantFiled: May 21, 2018Date of Patent: April 16, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Patent number: 10115652Abstract: A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.Type: GrantFiled: February 11, 2017Date of Patent: October 30, 2018Assignee: Renesas Electronics CorporationInventors: Hideo Numabe, Koji Tateno, Yusuke Ojima, Yoshihiko Yokoi, Shinya Ishida, Hitoshi Matsuura
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Publication number: 20180269789Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: ApplicationFiled: May 21, 2018Publication date: September 20, 2018Inventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Publication number: 20180248492Abstract: A power conversion device includes a high-side transistor including an IGBT, a low-side transistor including an IGBT, and having a collector coupled to an emitter of the high-side transistor, a high-side driver configured to drive the high-side transistor; and a low-side driver configured to drive the low-side transistor, wherein each of the high-side transistor and the low-side transistor includes a first trench gate electrode arranged in an active cell region, and electrically connected to a gate, and a second trench gate electrode and a third trench gate electrode, each of which is arranged at intervals on both sides of the first trench gate electrode, and electrically connected to the emitter in the active cell region. The high-side driver includes a first pull-up transistor configured to apply a first voltage as a positive voltage to the gate, based on the emitter of the high-side transistor and a first pull-down transistor.Type: ApplicationFiled: April 27, 2018Publication date: August 30, 2018Inventors: Daisuke KONDO, Koji TATENO, Chang LIU, Nao NAGATA
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Patent number: 10003262Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: GrantFiled: June 22, 2017Date of Patent: June 19, 2018Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Patent number: 9966870Abstract: To reduce the number of mounted components in the power conversion device and drive device. Each high-side transistor and low-side transistor has an EGE-type structure of (emitter-gate-emitter type). A high-side driver includes a first pull-up transistor configured to apply a first positive voltage to a gate based on an emitter of the high-side transistor, and a first pull-down transistor configured to couple the gate to the emitter. A low-side driver includes a second pull-up transistor configured to apply a second positive voltage to the gate based on an emitter of the low-side transistor, and a second pull-down transistor configured to couple the gate to the emitter.Type: GrantFiled: May 28, 2016Date of Patent: May 8, 2018Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Daisuke Kondo, Koji Tateno, Chang Liu, Nao Nagata
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Publication number: 20170288549Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: ApplicationFiled: June 22, 2017Publication date: October 5, 2017Inventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Publication number: 20170287802Abstract: A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.Type: ApplicationFiled: February 11, 2017Publication date: October 5, 2017Inventors: Hideo NUMABE, Koji TATENO, Yusuke OJIMA, Yoshihiko YOKOI, Shinya ISHIDA, Hitoshi MATSUURA
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Patent number: 9722592Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: GrantFiled: June 30, 2016Date of Patent: August 1, 2017Assignee: Renesas Electronics CorporationInventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Publication number: 20170012551Abstract: To reduce the number of mounted components in the power conversion device and drive device. Each high-side transistor and low-side transistor has an EGE-type structure of (emitter-gate-emitter type). A high-side driver includes a first pull-up transistor configured to apply a first positive voltage to a gate based on an emitter of the high-side transistor, and a first pull-down transistor configured to couple the gate to the emitter. A low-side driver includes a second pull-up transistor configured to apply a second positive voltage to the gate based on an emitter of the low-side transistor, and a second pull-down transistor configured to couple the gate to the emitter.Type: ApplicationFiled: May 28, 2016Publication date: January 12, 2017Inventors: Daisuke Kondo, Koji Tateno, Chang Liu, Nao Nagata
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Publication number: 20170005649Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: ApplicationFiled: June 30, 2016Publication date: January 5, 2017Inventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Patent number: 9397568Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: GrantFiled: January 31, 2014Date of Patent: July 19, 2016Assignee: Renesas Electronics CorporationInventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Patent number: 9369045Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.Type: GrantFiled: November 19, 2013Date of Patent: June 14, 2016Assignee: Renesas Electronics CorporationInventors: Kyoichi Hosokawa, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
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Patent number: 9257907Abstract: A switching loss is reduced by reducing a deviation from the operational principle of zero-volt switching (ZVS). A semiconductor integrated circuit includes high-side switch elements Q11 and Q12, a low-side switch element Q2, and a controller CNT. A decoupling capacitance Cin is coupled between one end of a high-side element and an earth potential, and the high-side element includes the first and second transistors Q11 and Q12 coupled in parallel. In changing the high-side elements from an on-state to an off-state, CNT controls Q12 from an on-state to an off-state by delaying Q12 relative to Q11. Q11 and Q12 are divided into a plurality of parts inside a semiconductor chip Chip 1, a plurality of partial first transistors formed by dividing Q11 and a plurality of partial second transistors formed by dividing Q12 are alternately arranged in an arrangement direction of Q11 and Q12, inside the semiconductor chip Chip 1.Type: GrantFiled: October 28, 2013Date of Patent: February 9, 2016Assignee: Renesas Electronics CorporationInventors: Takahiro Nomiyama, Koji Tateno, Daisuke Kondo
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Publication number: 20150280571Abstract: Disclosed is a power conversion circuit that suppresses the flow of a through current to a switching element based on a normally-on transistor. The power conversion circuit includes a high-side transistor and a low-side transistor, which are series-coupled to each other to form a half-bridge circuit, and two drive circuits, which complementarily drive the gate of the high-side transistor and of the low-side transistor. The high-side transistor is a normally-off transistor. The low-side transistor is a normally-on transistor.Type: ApplicationFiled: June 17, 2015Publication date: October 1, 2015Inventors: Koji TATENO, Takahiro NOMIYAMA, Yoshinao MIURA, Hideo ISHII
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Publication number: 20150256072Abstract: A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.Type: ApplicationFiled: January 31, 2014Publication date: September 10, 2015Inventors: Daisuke Kondo, Koji Tateno, Yumi Kishita, Tomoaki Uno
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Patent number: 9083257Abstract: Disclosed is a power conversion circuit that suppresses the flow of a through current to a switching element based on a normally-on transistor. The power conversion circuit includes a high-side transistor and a low-side transistor, which are series-coupled to each other to form a half-bridge circuit, and two drive circuits, which complementarily drive the gate of the high-side transistor and of the low-side transistor. The high-side transistor is a normally-off transistor. The low-side transistor is a normally-on transistor.Type: GrantFiled: July 31, 2012Date of Patent: July 14, 2015Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Koji Tateno, Takahiro Nomiyama, Yoshinao Miura, Hideo Ishii
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Publication number: 20140176093Abstract: A switching loss is reduced by reducing a deviation from the operational principle of zero-volt switching (ZVS). A semiconductor integrated circuit includes high-side switch elements Q11 and Q12, a low-side switch element Q2, and a controller CNT. A decoupling capacitance Cin is coupled between one end of a high-side element and an earth potential, and the high-side element includes the first and second transistors Q11 and Q12 coupled in parallel. In changing the high-side elements from an on-state to an off-state, CNT controls Q12 from an on-state to an off-state by delaying Q12 relative to Q11. Q11 and Q12 are divided into a plurality of parts inside a semiconductor chip Chip 1, a plurality of partial first transistors formed by dividing Q11 and a plurality of partial second transistors formed by dividing Q12 are alternately arranged in an arrangement direction of Q11 and Q12, inside the semiconductor chip Chip 1.Type: ApplicationFiled: October 28, 2013Publication date: June 26, 2014Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Takahiro NOMIYAMA, Koji TATENO, Daisuke KONDO
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Publication number: 20140173302Abstract: Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.Type: ApplicationFiled: February 24, 2014Publication date: June 19, 2014Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Ryotaro KUDO, Tomoaki UNO, Koji TATENO, Hideo ISHII, Kazuyuki UMEZU, Koji SAIKUSA
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Publication number: 20140152282Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.Type: ApplicationFiled: November 19, 2013Publication date: June 5, 2014Applicant: Renesas Electronics CorporationInventors: Kyoichi HOSOKAWA, Ryotaro KUDO, Toshio NAGASAWA, Koji TATENO