Abstract: Provided is a method of producing an optical element forming mold, the method including forming a ta-C film 12 on a mold matrix 10 for an optical element forming mold by an FCVA process, in which the mold matrix 10 is kept at a floating potential, a voltage is applied to a mold matrix-holding member 2 for holding the mold matrix via insulating members (3a,3b), and a magnet 4 internally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil 22, thereby homogenizing the film quality.

Abstract: Provided is a method of producing an optical element forming mold, the method including forming a ta-C film 12 on a mold matrix 10 for an optical element forming mold by an FCVA process, in which the mold matrix 10 is kept at a floating potential, a voltage is applied to a mold matrix-holding member 2 for holding the mold matrix via insulating members (3a,3b), and a magnet 4 internally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil 22, thereby homogenizing the film quality.

Abstract: An optical device that includes a low refractive index film is produced at a low cost. To attain this object, in a process of producing an optical device that includes a multilayer film in which low refractive index films and high refractive index films are alternately laminated, a porous film is formed on a substrate by a sputtering deposition system which uses a target unit. The porous film is immersed in a liquid to lower the refractive index of the film. By forming in simple steps a low refractive index film that is lower in refractive index than conventionally used films, a high quality optical device can be obtained at a low cost.

Abstract: A stress distribution resulting from variation in in-plane film quality of a stress relaxation layer and a reflective layer is eliminated. A reflective layer is stacked on a substrate via a stress relaxation layer. The stress relaxation layer has a stress relaxation portion having a uniform film thickness distribution to cancel the internal stress of the reflective layer, and a stress distribution eliminating portion with a film thickness distribution approximated to a second order even function. The stress is substantially proportional to the film thickness. Thus, formation of a given film thickness distribution allows the stress distribution to be controlled. However, changing the film thickness distribution based on a design value may degrade the optical characteristics. Thus, the film thickness distribution of the stress distribution eliminating portion, which serves to eliminate the stress distribution, is approximated to the second order even function.

Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract: An optical element for X-ray includes a substrate, a first multilayer film having a reflection property with respect to light in a soft X-ray wavelength range, and a second multilayer film, disposed between the substrate and the first multilayer film, for reducing film stress of the first multilayer film. The second multilayer film has a periodic structure having a unit period film thickness which is 90% or more and less than 110% of a two or more integral multiple of 7 nm.

Abstract: A multilayer film reflector for X-rays has alternately stacked layers formed on a substrate and comprising a layer (high refractive index layer) comprising a material having a large difference between a refractive index to soft X-ray and a refractive index in vacuum, and a layer (low refractive index layer) comprising a material having a small difference between a refractive index to soft X-ray and a refractive index in vacuum, wherein at least one intermediate layer having a crystalline structure is provided between the low refractive index layer and the high refractive index layer. Thereby, the crystallization of the low refractive index layer is promoted, the refractive index of the low refractive index layer is lowered, so that the reflectance of the multilayer film reflector is improved.

Abstract: An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

Abstract: An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

Abstract: An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

Abstract: An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

Abstract: A multilayer film reflector for X-rays has alternately stacked layers formed on a substrate and comprising a layer (high refractive index layer) comprising a material having a large difference between a refractive index to soft X-ray and a refractive index in vacuum, and a layer (low refractive index layer) comprising a material having a small difference between a refractive index to soft X-ray and a refractive index in vacuum, wherein at least one intermediate layer having a crystalline structure is provided between the low refractive index layer and the high refractive index layer. Thereby, the crystallization of the low refractive index layer is promoted, the refractive index of the low refractive index layer is lowered, so that the reflectance of the multilayer film reflector is improved.

Abstract: An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

Abstract: A deposition apparatus generates plasma by applying voltage to a target, deposits target's particles that are vaporized by the plasma onto a surface of an object, and forms a thin film onto the surface of the object, and also includes a plasma direction unit that directs the plasma generated by the application of the voltage.

Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract: An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

Abstract: The method of treating an inner wall of a vacuum apparatus equipped with a vacuum chamber, a pump for depressurizing an interior of the vacuum chamber and an electric power source for supplying electric power for generating discharge in the vacuum chamber, comprises the steps of depressurizing the interior of the vacuum chamber; introducing a discharge raw material gas into the depressurized interior of the vacuum chamber; supplying the electric power from the electric power source and converting the discharge raw material gas into a plasma to generate active species; and treating the inner wall of the vacuum apparatus with the active species to reduce amounts of an off-gas and an organic matter which are exhausted from the inner wall.

Abstract: There is provided a cleaning apparatus having a first vacuum container into which a cleaning object is to be introduced, a second vacuum container set apart from the first vacuum container by means of a light-transmissive member, a pump for evacuating the inside of each of the first vacuum container and the second vacuum container, a gas feed means for feeding an electric-discharge gas into the second vacuum container, and an electric-discharge generation means for generating electric discharge in the second vacuum container, wherein the cleaning object is irradiated through the light-transmissive member by light produced by the electric discharge generated in the second vacuum container.

Abstract: A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.