Abstract: An abdomen width determiner determines an abdomen width of a subject. A shape index calculator calculates a shape index corresponding to a cross-sectional shape of an abdomen of the subject. An obesity evaluator evaluates whether an obesity degree of the subject is high or low. An obesity index calculator calculates an obesity index corresponding to the abdomen width using a first equation if the obesity evaluator evaluates that the obesity degree is low, and calculates an obesity index corresponding to the abdomen width and the shape index using a second equation different from the first equation if the obesity evaluator evaluates that the obesity degree is high.

Abstract: An infrared array sensor includes: a base substrate; cavities which have array structure and are formed on a surface side of the base substrate; and pixel parts supported by the base substrate to cover the cavities, respectively. Each of the pixel parts includes a membrane structure that includes segmented membrane structures divided by slits. Each of the segmented membrane structures includes a thermosensor. Each membrane structure of the pixel parts includes a coupling piece for connecting its own segmented membrane structures to each other.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.

Abstract: To provide a chemical sensor that can dissolve analytes in a gas in a liquid using a simple method, the chemical sensor comprising a sensor support section; a gas injection hole through which a gas containing an analyte is injected; a sample collection section in which the analyte contained in the gas injected through the gas injection hole is collected; a sample delivery section through which the analyte collected in the sample collection section is delivered; a sample reaction section including a reactant that causes a predetermined reaction with the analyte delivered through the sample delivery section; and a detection section in which the analyte reacted with the reactant in the sample reaction section is detected, wherein the sample collection section includes a Peltier element that liquefies water vapor contained in the gas injected through the gas injection hole.

Abstract: An apparatus for controlling a pump driving motor includes estimated fluid volume obtaining means for obtaining an estimated volume of a brake fluid discharged to a reservoir, hydraulic pump controlling means for specifying the number of rotations of the motor for driving a hydraulic pump based on the estimated volume and for driving the hydraulic pump with the specified number of rotations, and changing means for changing the number of rotations of the motor to be smaller than the number of rotations specified on the basis of the estimated volume in a case where an actual time defined from a driving start of the hydraulic pump to a point where the brake fluid in the reservoir actually turns to zero is shorter than an estimated time over which the estimated volume turns to zero by a driving of the hydraulic pump with the specified number of rotations of the motor.

Abstract: The infrared array sensor comprises a base with recess and a plurality of image elements on the base to cover the recess. The image element has the first infrared absorption members and the thermosensors. The thin film structural body is formed with a slit which divides the thin film structural body into the cantilevers. The cantilever has one lengthwise end which is defined as the first end, and remaining one lengthwise end which is defined as the second end. The thermosensor is disposed on the cantilever. When the temperature variation of the thermosensor is caused, the thermosensor generates the output signal corresponding to the temperature variation of the thermosensor.

Abstract: An infrared array sensor includes: a base substrate; cavities which have array structure and are formed on a surface side of the base substrate; and pixel parts supported by the base substrate to cover the cavities, respectively. Each of the pixel parts includes a membrane structure that includes segmented membrane structures divided by slits. Each of the segmented membrane structures includes a thermosensor. Each membrane structure of the pixel parts includes a coupling piece for connecting its own segmented membrane structures to each other.

Abstract: An abdomen width determiner determines an abdomen width of a subject. A shape index calculator calculates a shape index corresponding to a cross-sectional shape of an abdomen of the subject. An obesity evaluator evaluates whether an obesity degree of the subject is high or low. An obesity index calculator calculates an obesity index corresponding to the abdomen width using a first equation if the obesity evaluator evaluates that the obesity degree is low, and calculates an obesity index corresponding to the abdomen width and the shape index using a second equation different from the first equation if the obesity evaluator evaluates that the obesity degree is high.

Abstract: To improve thermal insulation, a thermal infrared sensing element is carried on a sensor mount of a porous material and is spaced upwardly from a substrate by means of anchor studs projecting on the substrate. The sensor mount is formed with a pair of coplanar beams carry thereon leads extending from the sensing element. The leads and the beams are secured to the upper ends of the anchor studs to hold the sensing element at a predetermined height above the substrate. The beams and the leads are combined with each other by intermolecular adhesion such that the sensing element as well as the sensor mount can be altogether supported to the anchor studs.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) comprises an infrared absorption member (33) in the form of a thin film configured to absorb infrared, and a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10). The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (33), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). Each of the p-type polysilicon layer (35) and the n-type polysilicon layer (34) has an impurity concentration in a range of 1018 to 1020 cm?3.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) includes an infrared absorption member (33) in the form of a thin film configured to absorb infrared, a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10), and a safeguard film (39). The infrared element (3) is spaced from the surface of the base (10) for thermal insulation. The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (35), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34).

Abstract: An abdominal impedance measurement apparatus includes a plurality of electrodes for measuring an abdominal impedance of a human subject, and includes an electrode supporting member for supporting the electrodes in such a manner that the electrodes protrude from the electrode supporting member. The electrode supporting member includes a plurality of segments aligned in a direction, the electrodes being respectively mounted on different segments, neighboring segments being connected rotatably with each other. The electrode supporting member further includes rotation-angle restricting parts for restricting relative rotation-angles between neighboring segments.

Abstract: In the method for manufacturing the infrared image sensor, first, a thermal insulation layer (33) is made by forming a silicon dioxide film (31) on a first area (A1) followed by forming a silicon nitride film (32) on the silicon dioxide film (31). The silicon dioxide film (31) has compression stress. The first area (A1) is reserved in a surface of a silicon substrate (1) for forming an infrared detection element (3). The silicon nitride film (32) has tensile stress. Next, a well region (41) is formed in a second area (A2) reserved in the surface of the silicon substrate (1) for forming a MOS transistor (4). After that, a gate insulation film (45) of the MOS transistor (4) is formed by means of thermal oxidation of the surface of the silicon substrate (1). Thereafter, a temperature detection element (36) is formed on the thermal insulation layer (33). Subsequently, a drain region (43) and a source region (44) of the MOS transistor (4) are formed in the well region (41).

Abstract: Provided is a simulation method, whereby the calibration operation load can be reduced while minimizing a lowering in prediction accuracy, and a simulation apparatus. It is also intended to provide a biological treatment method, whereby the required operation load can be reduced, and a biological treatment apparatus. These problems can be solved by employing as parameters the maximum reaction speed in the reaction of decomposing a material to be treated with a bacterium and the amount of the above-described material to be treated that is loaded per bacterial cell in a unit time during the biological treatment process or the amount of the above-described material that has been treated per bacterial cell in a unit time in a state where these parameters are in a definite functional relation.

Abstract: To improve thermal insulation, a thermal infrared sensing element is carried on a sensor mount of a porous material and is spaced upwardly from a substrate by means of anchor studs projecting on the substrate. The sensor mount is formed with a pair of coplanar beams carry thereon leads extending from the sensing element. The leads and the beams are secured to the upper ends of the anchor studs to hold the sensing element at a predetermined height above the substrate. The beams and the leads are combined with each other by intermolecular adhesion such that the sensing element as well as the sensor mount can be altogether supported to the anchor studs.

Abstract: An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.

Abstract: A sensor system includes a sensor device (10) and an integrated circuit (20) for driving the device (10). The device (10) includes a sensor body (1) of a silicon-based material, an upper sealing member (2) of a silicon-based material, and a lower sealing member (3) of a silicon-based material. The upper sealing member (2) and the lower sealing member (3) are joined together to cooperatively house the body (1) therewithin in an airtight manner. The device (10) and the circuit (20) are formed as a stacked body. The body (1) is electrically connected to a wiring pattern (12) of the circuit (20) through a conductive through-path (4) penetrating the upper sealing member (4) and a mounting electrode (5) provided on an outer surface of the upper sealing member (2). The device (10) is connected to an MID substrate (30) through the circuit (20).

Abstract: An abdomen width determiner determines an abdomen width value of a human subject. A memory stores a correlation between abdomen width values and waist circumferences of human beings. A waist circumference calculator calculates a waist circumference of the human subject on the basis of the abdomen width value determined by the abdomen width determiner and the correlation stored in the memory. The correlation stored in the memory may be expressed by the following regression formula: Y=aX+b where “Y” is a waist circumference of a human being, “X” is an abdomen width value of a human being, and “a” and “b” are constants.

Abstract: A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.

Abstract: An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.