Abstract: On the substrate (101), there is formed at least a laminated structure composed of sandwiching a tunnel barrier layer (107) between magnetic pinned layers (105 and 106) each having multilayer structure and magnetic free layers (108, 109, and 110) each having multilayer structure. The magnetic pinned layer having multilayer structure, the tunnel barrier layer, and the magnetic free layer having multilayer structure are stacked in this order on the substrate. The magnetic free layer having multilayer structure has a sandwich structure holding an intermediate layer (109) between a first magnetic free layer (108) and a second magnetic free layer (110). The intermediate layer comprises any one of a single-layer metal nitride, a single-layer alloy, and a multilayer film obtained by stacking pluralities of films made of metal, metal nitride, or alloy.

Abstract: In a method of manufacturing a magneto-resistance element having a multi-layer film including magnetic layers, TaOx generated on the surface of the Ta mask is prevented from peeling off when etching is performed on the multi-layer film using an etching gas containing oxygen atoms. When a Ta mask which is used at the time of dry etching performed on the multi-layer film including magnetic layers with an etching gas containing oxygen atoms is formed by sputtering, the Ar gas pressure is set to be 0.1 Pa to 0.4 Pa.

Abstract: A magnetoresistance effect device has a fixed ferromagnetism layer, a free ferromagnetism layer, and a barrier layer sandwiched by these ferromagnetic layers. It is constituted so that CoFeB whose amount of addition of boron B (b: atomic %) is 21%?b?23% may be used for the free ferromagnetism layer. In the magnetic resistance effect element, a magnetostrictive constant does not change steeply near the magnetostrictive constant zero. A MR ratio is maintained to be high.

Abstract: Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

Abstract: In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected

Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Abstract: A tunnel magnetoresistive thin film which can simultaneously realize a high MR ratio and low magnetostriction is provided. The tunnel magnetoresistive thin film comprises a magnetization fixed layer, a tunnel barrier layer, and a magnetization free layer, wherein the tunnel barrier layer is a magnesium oxide film containing magnesium oxide crystal grains and the magnetization free layer is a layered structure including a first magnetization free layer and a second magnetization free layer, the first magnetization free layer being made of alloy containing Co atoms, Fe atoms, and B atoms or containing Co atoms, Ni atoms, Fe atoms, and B atoms, having a body-centered cubic structure, and having (001) orientation, the second magnetization free layer being made of alloy containing Fe atoms and Ni atoms and having a face-centered cubic structure.

Abstract: A sputtering method and a sputtering apparatus are provided in which a target is disposed being inclined relative to a substrate placed on a substrate-placing table so that the condition of d?D is satisfied, (d is the diameter of the substrate, and D is the diameter of the target), and the total number of rotations R of the substrate-placing table from the beginning of film-deposition on the substrate to the completion thereof becomes ten or more. Also the sputtering method and the sputtering apparatus are provided in which the rotational speed V of the substrate-placing table is controlled so that the total number of rotations R thereof satisfies the formula of 0.95×S?0.025?R?1.05×S+0.025 at R?10, (R is the total number of rotations of the substrate-placing table from the beginning of film-deposition on the substrate to the completion thereof, and S is the value of the number of total rotations R rounded off to integer).

Abstract: A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.

Abstract: The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.

Abstract: The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.

Abstract: The present invention provides a tunnel magnetoresistive thin film having a high MR ratio by improving heat resistance while maintaining a thin film of a Ru layer used as a non-magnetic layer so that the Ru layer expresses preferable exchange coupling magnetic field even through annealing at high temperature. In the tunnel magnetoresistive thin film, at least one of a first pinned magnetic layer and a second pinned magnetic layer that are layered having the non-magnetic layer for exchange coupling therebetween has a layered structure of two or more layers made of magnetic materials different from each other.

Abstract: A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.

Abstract: A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer.

Abstract: A method for manufacturing a magnetoresistive multilayer film. An antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for the antiferromagnetic layer is deposited by a sputtering process with a gas mixture of argon and another gas of larger atomic number than argon.

Abstract: The present invention provides a multi-target sputtering apparatus including an increased number of targets which can be sputtered simultaneously, and a method for controlling the sputtering apparatus. In one embodiment of the present invention, first and second shutter plates are provided between a substrate and target electrodes and paths between intended targets and the substrate are shut off by the shutter plates to perform a pre-sputtering step. In addition, the first and second shutter plates are rotated as appropriate at the time of transition to a full-scale sputtering step, so as to overlap through-holes provided in the shutter plates, thereby opening up paths between the intended targets and the substrate. Then, a full-scale sputtering step is performed.

Abstract: A method of manufacturing a magnetoresistance effect element having a high MR ratio even with a low RA and an apparatus of the same are provided. The magnetoresistance effect element having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber in which a substance whose getter effect with respect to the oxidizing gas such as oxygen or water is large is adhered to the surfaces of components (an inner wall 37 of a film forming chamber in the interior of a first film forming chamber 21, inner walls of an adhesion preventing shield 36, a partitioning plate 22, a shutter or the like) provided in the chamber for forming the MgO layer. The substance having a large getter effect must simply be a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher and, in particular, Ta (tantalum) as a substance which constitutes the magnetoresistance effect element is preferable.

Abstract: A contaminant removing method of this invention has a step of emitting, in a vacuum, a directional beam to at least one of the lower surface edge and circumferential surface of a substrate to be processed having a thin film formed on its upper surface.

Abstract: A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed from a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer, a magnetic free layer formed from a layer containing a ferromagnetic material, and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer.

Abstract: This application discloses a magnetoresistive multilayer film having the structure where an antiferromagnetic layer, a pinned-magnetization layer, a non-magnetic spacer layer and a free-magnetization layer are laminated in this order. An opposite-side layer is provided on the side of the antiferromagnetic layer opposite to the pined-magnetization layer. The opposite-side layer has components of nickel and chromium. An atomic numeral ratio of chromium in the opposite-side layer is preferably not less than 41% and not more than 70%, more preferably not less than 43%.