Abstract: A light receiving element includes a light receiving layer that includes a superlattice of an InAs layer and a GaSb layer, and an amorphous layer that covers a side wall surface of the light receiving layer. The amorphous layer contains In and As, and an amount of Ga and an amount of Sb contained in the amorphous layer are smaller than an amount of In and an amount of As contained in the amorphous layer.

Abstract: An infrared detector includes: a first light receiving layer having a first cutoff wavelength; a second light receiving layer having a second cutoff wavelength longer than the first cutoff wavelength; an intermediate filter layer having a third cutoff wavelength that is the same as or longer than the first cutoff wavelength and the same as or shorter than the second cutoff wavelength, the intermediate filter layer being disposed between the first light receiving layer and the second light receiving layer; a first barrier layer disposed between the first light receiving layer and the intermediate filter layer; and a second barrier layer disposed between the second light receiving layer and the intermediate filter layer.

Abstract: An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

Abstract: An infrared detector includes: a first light receiving layer having a first cutoff wavelength; a second light receiving layer having a second cutoff wavelength longer than the first cutoff wavelength; an intermediate filter layer having a third cutoff wavelength that is the same as or longer than the first cutoff wavelength and the same as or shorter than the second cutoff wavelength, the intermediate filter layer being disposed between the first light receiving layer and the second light receiving layer; a first barrier layer disposed between the first light receiving layer and the intermediate filter layer; and a second barrier layer disposed between the second light receiving layer and the intermediate filter layer.

Abstract: An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

Abstract: An apparatus includes a substrate that has a plane orientation inclined from a (100) plane such that an inclination angle to a [0-11] direction or a [01-1] direction is larger than an inclination angle to a [011] direction and a [0-1-1] direction, or inclined from a (010) plane such that an inclination angle to a [10-1] direction or a [?101] direction is larger than an inclination angle to a [101] direction and a [?10-1] direction, or inclined from a (001) plane such that an inclination angle to a [?110] direction or a [1-10] direction is larger than an inclination angle to a [110] direction and the [?1-10] direction; and a light-receiving layer disposed above the substrate and having a structure in which a plurality of semiconductor layers are stacked.

Abstract: A magnetic tunnel junction device includes a first magnetic tunnel junction including a first free layer and a first pinned layer, the first pinned layer having magnetization thereof aligned in a first direction, and a second magnetic tunnel junction including a second free layer and a second pinned layer, the second free layer being magnetically coupled to the first free layer via a spacer, and the second pinned layer having magnetization thereof aligned in a second direction opposite the first direction, wherein a magnetization direction of the first free layer is configured to be retained in a nonvolatile manner upon being selectively set to either the first direction or the second direction, and a readiness of the magnetization of the second free layer to be reversed varies depending on the magnetization direction of the first free layer.

Abstract: A resistive random access memory includes a lower electrode; a metal oxide film formed on the lower electrode and having a variable resistance, the metal oxide film having a first portion containing a metal element forming the metal oxide film and a second portion richer in oxygen than the first portion; and an upper electrode formed on the metal oxide film.

Abstract: A resistive random access memory includes a lower electrode; a metal oxide film formed on the lower electrode and having a variable resistance, the metal oxide film having a first portion containing a metal element forming the metal oxide film and a second portion richer in oxygen than the first portion; and an upper electrode formed on the metal oxide film.

Abstract: On a switch cover attached to a switch body incorporating a switching mechanism and a regulating mechanism from above, an opening is provided to expose a part of an operation knob and to allow the operation knob to be swung. A through hole is provided on the switch body so as to vertically penetrate through the same in a position of the switch body in communication with the opening. Thus, fine sand that has entered through the opening can be discharged to the outside.

Abstract: On a switch cover attached to a switch body incorporating a switching mechanism and a regulating mechanism from above, an opening is provided to expose a part of an operation knob and to allow the operation knob to be swung. A through hole is provided on the switch body so as to vertically penetrate through the same in a position of the switch body in communication with the opening. Thus, fine sand that has entered through the opening can be discharged to the outside.