Abstract: An inspection device is provided in which X-rays are radiated in a fan-like shape with respect to an extension direction of steel cords, are transmitted through a conveyor belt, and reach an X-ray line sensor. A control device makes an X-ray generator and the X-ray line sensor move in a fixed relative position at a certain speed within a certain movement range in a direction parallel with a plane and orthogonal to an extension direction of the steel cords. The control device generates two-dimensional image information on the basis of an X-ray transmission signal obtained each time the X-ray generator and the X-ray line sensor move a unit amount equal to a pixel pitch of the X-ray line sensor. The control device detects measurement information relating to the conveyor belt and the steel cords on the basis of the obtained two-dimensional image information.

Abstract: An inspection device is provided in which X-rays are radiated in a fan-like shape with respect to an extension direction of steel cords, are transmitted through a conveyor belt, and reach an X-ray line sensor. A control device makes an X-ray generator and the X-ray line sensor move in a fixed relative position at a certain speed within a certain movement range in a direction parallel with a plane and orthogonal to an extension direction of the steel cords. The control device generates two-dimensional image information on the basis of an X-ray transmission signal obtained each time the X-ray generator and the X-ray line sensor move a unit amount equal to a pixel pitch of the X-ray line sensor. The control device detects measurement information relating to the conveyor belt and the steel cords on the basis of the obtained two-dimensional image information.

Abstract: An extruder has a discharge opening formed into a rectangular shape by a pair of end surface forming walls and a pair of side surface forming walls. A die configured to discharge a rubber material pressed out towards the discharge opening as two bands separated from each other at the discharge opening is provided having a height spanning between the pair of end surface forming walls and inserted so as to be movable and adjustable in the axial direction of the discharge opening at the center of the pair of side surface forming walls. The width between the left-right side surface of the die is formed at dimensions that become smaller from the base surface toward the tip surface. A convex curved surface configuring the left-right side surfaces is formed having a radius of curvature that becomes smaller from the base surface toward the tip surface of the die.

Abstract: In the present technology, when rolling rubber material extruded from a first rubber extruder (32) with a first pair of rollers (36, 36) to form a first sheet-shaped member (S1) and layering and rolling the first sheet-shaped member (S1) and the second sheet-shaped member (S2) supplied from an original material with a second pair of rollers (38, 38) to contiguously produce a laminate having the first sheet-shaped member (S1) and a second sheet-shaped member (S2) laminated therein, the gap between the first pair of rollers (36, 36) is controlled on the basis of the detection result of the thickness (d1) of the first sheet-shaped member (S1) rolled by the first pair of rollers (36, 36), the detection result of the thickness (d2) of the second sheet-shaped member (S2) supplied from the original material, and the detection result of the thickness (d3) of the laminate body.

Abstract: In the present technology, when rolling rubber material extruded from a first rubber extruder (32) with a first pair of rollers (36, 36) to form a first sheet-shaped member (S1) and layering and rolling the first sheet-shaped member (S1) and the second sheet-shaped member (S2) supplied from an original material with a second pair of rollers (38, 38) to contiguously produce a laminate having the first sheet-shaped member (S1) and a second sheet-shaped member (S2) laminated therein, the gap between the first pair of rollers (36, 36) is controlled on the basis of the detection result of the thickness (d1) of the first sheet-shaped member (S1) rolled by the first pair of rollers (36, 36), the detection result of the thickness (d2) of the second sheet-shaped member (S2) supplied from the original material, and the detection result of the thickness (d3) of the laminate body.

Abstract: An extruder has a discharge opening formed into a rectangular shape by a pair of end surface forming walls and a pair of side surface forming walls. A die configured to discharge a rubber material pressed out towards the discharge opening as two bands separated from each other at the discharge opening is provided having a height spanning between the pair of end surface forming walls and inserted so as to be movable and adjustable in the axial direction of the discharge opening at the center of the pair of side surface forming walls. The width between the left-right side surface of the die is formed at dimensions that become smaller from the base surface toward the tip surface. A convex curved surface configuring the left-right side surfaces is formed having a radius of curvature that becomes smaller from the base surface toward the tip surface of the die.

Abstract: This semiconductor device includes: a first cylinder interlayer insulating film; a second cylinder interlayer insulating film; a cylinder hole including a first cylinder hole and a second cylinder hole communicating with the first cylinder hole; and a capacitor including a lower electrode and an upper electrode. The first cylinder interlayer insulating film has an etching rate for etchant, which is two to six times as high as an etching rate for the second cylinder interlayer insulating film, a hole diameter of the first cylinder hole is larger than that of the second cylinder hole, and the hole diameter of the second cylinder hole near an interface between the first cylinder interlayer insulating film and the second cylinder interlayer insulating film increases as the second cylinder hole approaches the interface.

Abstract: In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

Abstract: A miniature contact is incorporated in a semiconductor device for transferring an electric signal between a conductive wiring and an impurity region, and a titanium silicide and a single crystal silicon region doped with an impurity forms an ohmic contact; in order to form the ohmic contact, a surface portion of the single crystal silicon region is made amorphous by using an ion-bombardment, thereafter, titanium is deposited on the amorphous silicon to have the thickness ranging between 3 nanometers and 10 nanometers, and the titanium layer is converted to a titanium silicide layer through an annealing at 400 degrees to 500 degrees in centigrade, thereby forming the low-resistive ohmic contact without changing the impurity profile of the single crystal silicon region.

Abstract: In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

Abstract: A fabrication process of a semiconductor device with a titanium film includes the steps of forming a titanium film on a substrate by way of a chemical vapor deposition method; and removing titanium deposited within a reaction chamber forming the titanium film by a gas containing halogen, following the titanium film forming step.

Abstract: In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

Abstract: A fabrication process of a semiconductor device with a titanium film includes the steps of forming a titanium film on a substrate by way of a chemical vapor deposition method; and removing titanium deposited within a reaction chamber forming the titanium film by a gas containing halogen, following the titanium film forming step.

Abstract: In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

Abstract: A manufacturing method for a semiconductor device includes the steps of: forming an insulating film on a silicon substrate; removing a predetermined portion of the insulating film and forming a contact hole wherein the silicon substrate is exposed; and depositing a titanium film on the exposed silicon substrate and the insulating film by setting the temperature of the substrate at 550 degrees Celsius or higher and by employing plasma chemical vapor deposition using halogenated titanium, H2, a gas containing halogen and a carrier gas.

Abstract: In a titanium film forming method of this invention, before a titanium film is formed, the temperature in a reaction chamber for forming the titanium film is set to a temperature or more at which hydrogen chloride is produced by chlorine and hydrogen. A hydrogenated gas is then fed into the reaction chamber for a predetermined period of time. With this process, before the titanium film is formed, chlorine gas and titanium chloride gas left in the reaction chamber for forming the titanium film are reduced.

Abstract: In a semiconductor device, a TiN plug is formed to filled up a contact hole which is formed to penetrate through an insulator film on a conductive silicon layer in a surface region of a silicon substrate. A first titanium silicide film is formed on a bottom surface of the TiN plug, so that the TiN plug is electrically connected to the conductive silicon layer through the first titanium silicide film. A second titanium silicide film is formed on a top surface of the TiN plug, and a polysilicon electrode is formed on the second titanium silicide film, so that the TiN plug is electrically connected to the polysilicon electrode through the second titanium silicide film. Thus, the contact resistance between the TiN plug and the polysilicon electrode is reduced.

Abstract: A titanium nitride film is formed on a silicon substrate having a contact hole formed therein by chemical vapor deposition and silicon ions are injected. Therefore, it is possible to reduce the film stress of the titanium nitride film, caused by the chemical vapor deposition, to the semiconductor device.

Abstract: A semiconductor device, has a TiN plug is formed to filled up a contact hole which is formed to penetrate through an insulator film on a conductive silicon layer in a surface region of a silicon substrate. A first titanium silicide film is formed on a bottom surface of the TiN plug, so that the TiN plug is electrically connected to the conductive silicon layer through the first titanium silicide film. A second titanium silicide film is formed on a top surface of the TiN plug, and a polysilicon electrode is formed on the second titanium silicide film, so that the TiN plug is electrically connected to the polysilicon electrode through the second titanium silicide film. Thus, the contact resistance between the TiN plug and the polysilicon electrode is reduced.