Abstract: A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.

Abstract: A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.

Abstract: A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.

Abstract: A method for fabricating a semiconductor device includes the steps of: (a) forming an alloy film containing a precious metal on a substrate having a semiconductor layer or on a conductive film formed on the substrate; (b) heat-treating the substrate to allow the precious metal to react with silicon forming a silicide film containing the precious metal on the substrate or the conductive film; (c) removing an unreacted portion of the alloy film with a first chemical solution after the step (b); (d) forming a silicon oxide film on the top surface of the silicide film including a portion underlying a residue of the precious metal by exposing the substrate to an oxidative atmosphere; and (e) dissolving the residue of the precious metal with a second chemical solution.

Abstract: The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c).

Abstract: A curable resin composition comprising:(A) a compound having at least one curable acrylic radical, methacrylic radical or vinyl radial, or a mixture thereof;(B) an organic solvent containing an alcoholic organic solvent with an amount of not less than 40% by weight;(C) a compound having at least one pentavalent P with phosphoryl bonding; and(D) a polymerization initiator whichwhen coated on the surface of molded inorganic or organic materials, the coating shows superiority in curing under atmosphere and the cured composition has excellent adhesion, surface hardness, resistance to scratch, resistance to abrasion, surface luster, transparency and antistatic property.