Abstract: A semiconductor device including a first conduction type semiconductor layer; a second conduction type element forming region formed above the first conduction type semiconductor layer and formed with at least one semiconductor element formed on a surface region of the second conduction type element forming region; a first conduction type element-isolation region insulating and segregating the second conduction type element forming region from the exterior; and a second conduction type buried region formed at the interface of the first conduction type semiconductor layer and the second conduction type element forming region, formed separated from the first conduction type element-isolation region. In the semiconductor device a second conduction type high concentration region is buried in the surface of the second conduction type element forming region and formed to surround the semiconductor element and separated from the first conduction type element-isolation region.

Abstract: A semiconductor device includes a semiconductor layer formed on an insulation layer and having an MOS (Metal Oxide Semiconductor) transistor area and a bi-polar transistor area; an MOS transistor formed in the MOS transistor area; and a bi-polar transistor formed in the bi-polar transistor area. The MOS transistor includes a source area of a second conductive type; a drain area of the second conductive type; and a channel area of a first conductive type. The MOS transistor further includes a gate electrode formed on the channel area with a first oxide layer inbetween. The bi-polar transistor includes a collector area of the second conductive type; an emitter area of the second conductive type; and a base area of the first conductive type. The bi-polar transistor further includes a dummy pattern formed on the base area with a second oxide layer inbetween.

Abstract: A semiconductor device including a first conduction type semiconductor layer; a second conduction type element forming region formed above the first conduction type semiconductor layer and formed with at least one semiconductor element formed on a surface region of the second conduction type element forming region; a first conduction type element-isolation region insulating and segregating the second conduction type element forming region from the exterior; and a second conduction type buried region formed at the interface of the first conduction type semiconductor layer and the second conduction type element forming region, formed separated from the first conduction type element-isolation region. In the semiconductor device a second conduction type high concentration region is buried in the surface of the second conduction type element forming region and formed to surround the semiconductor element and separated from the first conduction type element-isolation region.

Abstract: A semiconductor device includes a semiconductor layer formed on an insulation layer and having an MOS (Metal Oxide Semiconductor) transistor area and a bi-polar transistor area; an MOS transistor formed in the MOS transistor area; and a bi-polar transistor formed in the bi-polar transistor area. The MOS transistor includes a source area of a second conductive type; a drain area of the second conductive type; and a channel area of a first conductive type. The MOS transistor further includes a gate electrode formed on the channel area with a first oxide layer inbetween. The bi-polar transistor includes a collector area of the second conductive type; an emitter area of the second conductive type; and a base area of the first conductive type. The bi-polar transistor further includes a dummy pattern formed on the base area with a second oxide layer inbetween.

Abstract: There is provided a semiconductor device including: a semiconductor substrate including a supporting substrate, a first insulating film formed on the supporting substrate, and a silicon film having a first region and a second region formed on the first insulating film, and a third region at least a portion of which is disposed between the first region and the second region; a first diffusion layer formed on the first region of the silicon film and having a first conductive type; a second diffusion layer formed on the second region of the silicon film and containing impurities having a second conductive type, which has a polarity opposite to that of the first conductive type; a second insulating film formed on the third region of the silicon film; and a third insulating film formed on the second insulating film, as well as a method of fabricating the semiconductor device.