Patents by Inventor Kojiro Abe
Kojiro Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9587208Abstract: The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25% by weight of a quaternary ammonium hydroxide, 0.001 to 1.0% by weight of potassium hydroxide, 5 to 85% by weight of a water-soluble organic solvent, and 0.0005 to 10% by weight of pyrazoles.Type: GrantFiled: June 6, 2013Date of Patent: March 7, 2017Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Kenji Shimada, Kojiro Abe, Hiroshi Yoshida, Masaru Ohto
-
Publication number: 20150152366Abstract: [Problems to be Solved] The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. [Solution] A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25% by weight of a quaternary ammonium hydroxide, 0.001 to 1.0% by weight of potassium hydroxide, 5 to 85% by weight of a water-soluble organic solvent, and 0.0005 to 10% by weight of pyrazoles.Type: ApplicationFiled: June 6, 2013Publication date: June 4, 2015Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Kenji Shimada, Kojiro Abe, Hiroshi Yoshida, Masaru Ohto
-
Patent number: 8859411Abstract: According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.Type: GrantFiled: July 26, 2011Date of Patent: October 14, 2014Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kenji Shimada, Hiroshi Matsunaga, Kojiro Abe, Kenji Yamada
-
Patent number: 8802608Abstract: A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.Type: GrantFiled: July 3, 2008Date of Patent: August 12, 2014Assignee: Mitsubishi Gas Chemical Comany, Inc.Inventors: Kenji Shimada, Hiroshi Matsunaga, Kojiro Abe, Kenji Yamada
-
Patent number: 8658053Abstract: Disclosed is an etchant composition employed for selectively etching a metallic material in production of a semiconductor device, which is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. Also disclosed is a method for producing a semiconductor device employing the etchant composition.Type: GrantFiled: June 22, 2006Date of Patent: February 25, 2014Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kazuyoshi Yaguchi, Kojiro Abe, Masaru Ohto
-
Publication number: 20130196497Abstract: According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.Type: ApplicationFiled: July 26, 2011Publication date: August 1, 2013Applicant: Mitsubishi Gas Chemical Company, Inc.Inventors: Kenji Shimada, Hiroshi Matsunaga, Kojiro Abe, Kenji Yamada
-
Patent number: 7998914Abstract: A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols.Type: GrantFiled: November 24, 2006Date of Patent: August 16, 2011Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kenji Shimada, Kojiro Abe
-
Publication number: 20100216315Abstract: The invention provides an etchant composition employed for selectively etching a metallic material in production of a semiconductor device from an insulating material having high dielectric constant, an insulating material of silicon oxide film or silicon nitride film, and a metallic material, characterized in that the etchant composition is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. The invention also provides a method for producing a semiconductor device employing the etchant composition. According to the invention, a metallic material can be etched selectively and efficiently.Type: ApplicationFiled: June 22, 2006Publication date: August 26, 2010Inventors: Kazuyoshi Yaguchi, Kojiro Abe, Masaru Ohto
-
Publication number: 20100197136Abstract: A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.Type: ApplicationFiled: July 3, 2008Publication date: August 5, 2010Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Kenji Shimada, Hiroshi Matsunaga, Kojiro Abe, Kenji Yamada
-
Publication number: 20100152085Abstract: A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols.Type: ApplicationFiled: November 24, 2006Publication date: June 17, 2010Inventors: Kenji Shimada, Kojiro Abe
-
Publication number: 20090246967Abstract: A semiconductor surface treatment agent containing a fluorine compound, a water-soluble organic solvent and an inorganic acid, with the balance being water and a method for manufacturing a semiconductor device by etching a high dielectric constant insulating material using the subject semiconductor surface treatment agent are provided. According to the present invention, it is possible to selectively and efficiently etch a high dielectric constant insulating material to be used in a transistor formation process of the semiconductor device manufacture; and it is also possible to achieve etching with ease within a short period of time even for a high dielectric constant insulating material to which etching is hardly applied.Type: ApplicationFiled: November 30, 2006Publication date: October 1, 2009Inventors: Kazuyoshi Yaguchi, Kenji Shimada, Kojiro Abe
-
Patent number: 7572758Abstract: A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than 3. The cleaning liquid is effective for removing etching residues formed in a dry etching process from semiconductor devices and display devices without oxidizing and corroding their metal wirings, particularly, copper wirings and the materials of insulating films.Type: GrantFiled: August 12, 2005Date of Patent: August 11, 2009Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kenji Shimada, Kojiro Abe, Masaru Ohto, Hiroshi Matsunaga
-
Publication number: 20060040838Abstract: A cleaning liquid is provided, which comprises an aqueous solution containing nitric acid, sulfuric acid, a fluorine compound, and a basic compound. The concentration of water in the cleaning liquid is 80% by weight or more, and the pH value of the cleaning liquid is from 1 to less than 3. The cleaning liquid is effective for removing etching residues formed in a dry etching process from semiconductor devices and display devices without oxidizing and corroding their metal wirings, particularly, copper wirings and the materials of insulating films.Type: ApplicationFiled: August 12, 2005Publication date: February 23, 2006Inventors: Kenji Shimada, Kojiro Abe, Masaru Ohto, Hiroshi Matsunaga
-
Patent number: 6875288Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: GrantFiled: October 9, 2001Date of Patent: April 5, 2005Assignees: Tokyo Electron Limited, Mitsubishi Gas Chemical Company, Inc.Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
-
Publication number: 20040009883Abstract: The resist stripping composition of the present invention comprises 0.001 to 0.5% by weight of a fluorine compound, a mixed solvent of an amide solvent and an ether solvent and water. The resist stripping composition completely removes the resist residues remaining after the dry etching and the ashing in the wiring process for manufacturing semiconductor devices and liquid crystal panel devices comprising IC or LSI in a short period of time with a minimized corrosion of a low dielectric film.Type: ApplicationFiled: June 24, 2003Publication date: January 15, 2004Inventors: Kazuto Ikemoto, Kojiro Abe
-
Patent number: 6514352Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: GrantFiled: October 9, 2001Date of Patent: February 4, 2003Assignees: Tokyo Electron Limited, Mitsubishi Gas Chemical Company Inc.Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
-
Publication number: 20020066465Abstract: The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and a fluorine compound to flow on a surface of a material to be treated at a bigh speed to thereby clean the above surface. according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: ApplicationFiled: October 9, 2001Publication date: June 6, 2002Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
-
Publication number: 20020064963Abstract: The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.Type: ApplicationFiled: October 9, 2001Publication date: May 30, 2002Inventors: Hideto Gotoh, Takayuki Niuya, Hiroyuki Mori, Hiroshi Matsunaga, Fukusaburo Ishihara, Yoshiya Kimura, Ryuji Sotoaka, Takuya Goto, Tetsuo Aoyama, Kojiro Abe
-
Patent number: 6372410Abstract: A resist stripping composition contains 0.001 to 0.5% by weight of a fluorine compound, 50 to 99% by weight of an ether solvent and the balance being substantially water. With such a specific content range of the ether solvent, the resist stripping composition shows reduced corrosive properties when diluted with water in the rinsing step as well as shows complete removal of resist residues without causing corrosion of wiring materials and substrate materials.Type: GrantFiled: September 25, 2000Date of Patent: April 16, 2002Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kazuto Ikemoto, Kojiro Abe, Tetsuo Aoyama
-
Patent number: 6323169Abstract: An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.Type: GrantFiled: March 3, 2000Date of Patent: November 27, 2001Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kojiro Abe, Hideki Fukuda, Hisaki Abe, Taketo Maruyama