Abstract: A ladder frame for an internal combustion engine includes a first lateral wall and a second lateral wall, crank caps, and first joining portions and second joining portions. Each crank cap includes an arc-shaped center portion, a first lateral portion and a second lateral portion. Each first lateral portion is joined to the first lateral wall via each first joining portion, and each second lateral portion is joined to the second lateral wall via each second joining portion. Each center portion includes a supporting portion that rotatably supports the crankshaft, the center portion including a recess to which the residual portion is joined, on the opposite side to the supporting portion. Respective thicknesses of the first lateral portion and the second lateral portion are the same as that of the center portion. The recess is provided with a projection embedded in the residual portion.

Abstract: A ladder frame for an internal combustion engine includes a first lateral wall and a second lateral wall, crank caps, and first joining portions and second joining portions. Each crank cap includes an arc-shaped center portion, a first lateral portion and a second lateral portion. Each first lateral portion is joined to the first lateral wall via each first joining portion, and each second lateral portion is joined to the second lateral wall via each second joining portion. Each center portion includes a supporting portion that rotatably supports the crankshaft, the center portion including a recess to which the residual portion is joined, on the opposite side to the supporting portion. Respective thicknesses of the first lateral portion and the second lateral portion are the same as that of the center portion. The recess is provided with a projection embedded in the residual portion.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys.

Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys.

Abstract: A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys.

Abstract: According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

Abstract: An aluminum-chromium based alloy which has a high strength, an excellent heat resistance, corrosion resistance, and a light weight contains 10 to 25 atomic percent of Cr and 0.1 to 5.0 atomic percent of Fe and/or Ni. The total content of Cr, and Fe and/or Ni is not more than 30 atomic percent The remainder substantially consists of aluminum. The aluminum-chromium based alloy partially or entirely exhibits and amorphous state by X-ray diffraction. This aluminum-chromium based alloy is obtained by first preparing a powder by a rapid solidification method, then converting the powder raw material to an amorphous powder by performing a mechanical grinding treatment thereon, and then hot working the amorphous powder.