Patents by Inventor Kojiro Komagaki

Kojiro Komagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210012942
    Abstract: A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure. A magnetic laminate in which magnetic metal layers and non-magnetic metal layers are alternately laminated, wherein the non-magnetic metal layer is disposed between the magnetic metal layers; the magnetic metal layer contains an amorphous material; and the non-magnetic metal layer contains at least one element selected from the group consisting of Cr, Ru, Rh, Ir, Re, and Cu, and has an average thickness of 0.4 nm or more and 1.5 nm or less (i.e., from 0.4 nm to 1.5 nm).
    Type: Application
    Filed: July 9, 2020
    Publication date: January 14, 2021
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Kojiro KOMAGAKI, Kenji SAKAGUCHI
  • Patent number: 9330692
    Abstract: Embodiments disclosed herein generally relate to a TMR sensor for reading a recording from a magnetic recording medium using TMR, and in particular, to a magnetic capping structure of the TMR sensor. The sensor comprises a free layer and a magnetic capping structure. The magnetic capping structure comprises a ferromagnetic capping layer and an absorption layer formed on the ferromagnetic capping layer. The absorption layer is adapted to absorb molecules from the ferromagnetic capping layer and prevent the ferromagnetic capping layer from diffusing into the free layer.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: May 3, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Norihiro Okawa, Kojiro Komagaki
  • Publication number: 20160027458
    Abstract: Embodiments disclosed herein generally relate to a TMR sensor for reading a recording from a magnetic recording medium using TMR, and in particular, to a magnetic capping structure of the TMR sensor. The sensor comprises a free layer and a magnetic capping structure. The magnetic capping structure comprises a ferromagnetic capping layer and an absorption layer formed on the ferromagnetic capping layer. The absorption layer is adapted to absorb molecules from the ferromagnetic capping layer and prevent the ferromagnetic capping layer from diffusing into the free layer.
    Type: Application
    Filed: July 25, 2014
    Publication date: January 28, 2016
    Inventors: Norihiro OKAWA, Kojiro KOMAGAKI
  • Patent number: 8570691
    Abstract: In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: October 29, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Masashige Sato, Kojiro Komagaki
  • Patent number: 8514527
    Abstract: According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: August 20, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Kojiro Komagaki, Katsumi Hoshino, Masashige Sato, Hiroyuki Hoshiya
  • Publication number: 20120257298
    Abstract: In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.
    Type: Application
    Filed: April 7, 2011
    Publication date: October 11, 2012
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Masashige Sato, Kojiro Komagaki
  • Publication number: 20110134563
    Abstract: According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.
    Type: Application
    Filed: November 29, 2010
    Publication date: June 9, 2011
    Inventors: Kojiro Komagaki, Katsumi Hoshino, Masashige Sato, Hiroyuki Hoshiya
  • Publication number: 20090009913
    Abstract: A tunneling magneto-resistance element has a pinned magnetic layer, a free magnetic layer, a tunnel barrier layer interposed between the pinned magnetic layer and the free magnetic layer, an antiferromagnetic layer that pins a magnetization direction of the pinned magnetic layer, a lower shield layer under the antiferromagnetic layer and a seed layer under the lower shield layer. The lower shield layer causes the antiferromagnetic layer to be oriented in a plane orientation direction that causes a unidirectional anisotropy of the antiferromagnetic layer to be improved. The seed layer causes the lower shield layer to be oriented in a plane orientation direction identical to the plane orientation direction of the antiferromagnetic layer. The gap thickness in the read head can be reduced without impairing the effect of pinning by an antiferromagnetic layer with a pinned magnetic layer.
    Type: Application
    Filed: June 30, 2008
    Publication date: January 8, 2009
    Applicant: FUJITSU LIMITED
    Inventor: Kojiro Komagaki
  • Publication number: 20080180860
    Abstract: In the magnetic thin film, a magnetization direction of a ferromagnetic layer, e.g., a pinned layer, can be securely fixed. The magnetic thin film comprises: an antiferromagnetic layer; and the ferromagnetic layer. The antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between the antiferromagnetic layer and the ferromagnetic layer.
    Type: Application
    Filed: November 29, 2007
    Publication date: July 31, 2008
    Applicant: Fujitsu Limited
    Inventors: Migaku Takahashi, Masakiyo Tsunoda, Kojiro Komagaki
  • Publication number: 20080180857
    Abstract: The tunnel magnetoresistance effect film is a highly practical tunnel magnetoresistance effect film having a characteristic of serviceable negative MR ratio, which can be used at room temperature. The tunnel magnetoresistance effect film comprises: a tunnel barrier layer; and magnetic layers sandwiching the tunnel barrier layer. One of the magnetic layers is composed of FeN.
    Type: Application
    Filed: November 29, 2007
    Publication date: July 31, 2008
    Applicant: Fujitsu Limited
    Inventors: Migaku Takahashi, Masakiyo Tsunoda, Kojiro Komagaki
  • Publication number: 20080062582
    Abstract: Stable anti-ferromagnetic exchange coupling can be obtained between a first pinned magnetic layer in a magnetoresistive element and a second pinned magnetic layer through smoothing of a non-magnetic intermediate layer, by smoothing the first pinned magnetic layer. The magnetoresistive element is made by sequentially laminating an underlayer, an anti-ferromagnetic layer, the first pinned magnetic layer, the non-magnetic intermediate layer, the second pinned magnetic layer, a tunnel barrier layer, a free magnetic layer, and a protection layer. The first pinned magnetic layer is smoothed before the non-magnetic intermediate layer is laminated over the first pinned magnetic layer. Stable magnetoresistive characteristics can be obtained, even when thickness is reduced, by smoothing the tunnel barrier layer. In that case, excellent magnetoresistive characteristics can also be obtained even when the tunnel barrier layer requires crystal properties.
    Type: Application
    Filed: February 26, 2007
    Publication date: March 13, 2008
    Inventor: Kojiro Komagaki