Abstract: A thermoelectric conversion device that includes an element body including a plurality of stacked; and a meandering wire inside the element body and that has a stacked structure. The meandering wire includes a thermoelectric material that has an anomalous Nernst effect, and a thermal conductivity of the plurality of stacked substrates is lower than that of the thermoelectric material. A thermoelectric conversion device that includes a winding core; and a winding wire wound around the winding core. The winding wire consists only of a thermoelectric material that has an anomalous Nernst effect. A thermoelectric conversion device that includes a plurality of substrates and meandering wires on main surfaces of the respective substrates. The meandering wires include a thermoelectric material that has an anomalous Nernst effect, and the substrates adjacent to each other are arranged at an angle that is larger than 0 degrees and smaller than 180 degrees.

Abstract: A magnetic material that includes: particles of a layered material including one or more layers and magnetic metal ions in contact with the one or more layers, wherein the one or more layers include a layer body represented by: MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and a modifier or terminal T is present on a surface of the layer body, wherein T is at least one selected from a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom, and wherein the particles have an average value of thickness of not less than 1 nm and not more than 10 nm.

Abstract: A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure. A magnetic laminate in which magnetic metal layers and non-magnetic metal layers are alternately laminated, wherein the non-magnetic metal layer is disposed between the magnetic metal layers; the magnetic metal layer contains an amorphous material; and the non-magnetic metal layer contains at least one element selected from the group consisting of Cr, Ru, Rh, Ir, Re, and Cu, and has an average thickness of 0.4 nm or more and 1.5 nm or less (i.e., from 0.4 nm to 1.5 nm).

Abstract: A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure. A magnetic laminate in which magnetic metal layers and non-magnetic metal layers are alternately laminated, wherein the non-magnetic metal layer is disposed between the magnetic metal layers; the magnetic metal layer contains an amorphous material; and the non-magnetic metal layer contains at least one element selected from the group consisting of Cr, Ru, Rh, Ir, Re, and Cu, and has an average thickness of 0.4 nm or more and 1.5 nm or less (i.e., from 0.4 nm to 1.5 nm).

Abstract: Embodiments disclosed herein generally relate to a TMR sensor for reading a recording from a magnetic recording medium using TMR, and in particular, to a magnetic capping structure of the TMR sensor. The sensor comprises a free layer and a magnetic capping structure. The magnetic capping structure comprises a ferromagnetic capping layer and an absorption layer formed on the ferromagnetic capping layer. The absorption layer is adapted to absorb molecules from the ferromagnetic capping layer and prevent the ferromagnetic capping layer from diffusing into the free layer.

Abstract: Embodiments disclosed herein generally relate to a TMR sensor for reading a recording from a magnetic recording medium using TMR, and in particular, to a magnetic capping structure of the TMR sensor. The sensor comprises a free layer and a magnetic capping structure. The magnetic capping structure comprises a ferromagnetic capping layer and an absorption layer formed on the ferromagnetic capping layer. The absorption layer is adapted to absorb molecules from the ferromagnetic capping layer and prevent the ferromagnetic capping layer from diffusing into the free layer.

Abstract: In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.

Abstract: According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.

Abstract: In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.

Abstract: According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.

Abstract: A tunneling magneto-resistance element has a pinned magnetic layer, a free magnetic layer, a tunnel barrier layer interposed between the pinned magnetic layer and the free magnetic layer, an antiferromagnetic layer that pins a magnetization direction of the pinned magnetic layer, a lower shield layer under the antiferromagnetic layer and a seed layer under the lower shield layer. The lower shield layer causes the antiferromagnetic layer to be oriented in a plane orientation direction that causes a unidirectional anisotropy of the antiferromagnetic layer to be improved. The seed layer causes the lower shield layer to be oriented in a plane orientation direction identical to the plane orientation direction of the antiferromagnetic layer. The gap thickness in the read head can be reduced without impairing the effect of pinning by an antiferromagnetic layer with a pinned magnetic layer.

Abstract: In the magnetic thin film, a magnetization direction of a ferromagnetic layer, e.g., a pinned layer, can be securely fixed. The magnetic thin film comprises: an antiferromagnetic layer; and the ferromagnetic layer. The antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between the antiferromagnetic layer and the ferromagnetic layer.

Abstract: The tunnel magnetoresistance effect film is a highly practical tunnel magnetoresistance effect film having a characteristic of serviceable negative MR ratio, which can be used at room temperature. The tunnel magnetoresistance effect film comprises: a tunnel barrier layer; and magnetic layers sandwiching the tunnel barrier layer. One of the magnetic layers is composed of FeN.

Abstract: Stable anti-ferromagnetic exchange coupling can be obtained between a first pinned magnetic layer in a magnetoresistive element and a second pinned magnetic layer through smoothing of a non-magnetic intermediate layer, by smoothing the first pinned magnetic layer. The magnetoresistive element is made by sequentially laminating an underlayer, an anti-ferromagnetic layer, the first pinned magnetic layer, the non-magnetic intermediate layer, the second pinned magnetic layer, a tunnel barrier layer, a free magnetic layer, and a protection layer. The first pinned magnetic layer is smoothed before the non-magnetic intermediate layer is laminated over the first pinned magnetic layer. Stable magnetoresistive characteristics can be obtained, even when thickness is reduced, by smoothing the tunnel barrier layer. In that case, excellent magnetoresistive characteristics can also be obtained even when the tunnel barrier layer requires crystal properties.