Abstract: A fluorescent molded body includes a first surface that receives incident light from a laser light source, a second surface that faces the first surface, first and second lateral surfaces each contacting the second surface at a blunt angle, and a phosphor layer that is excited by light from the laser light source to emit a specific light. A distance between the position where the first and second lateral surfaces meet the second surface is less than two times the wavelength of the second light, such that evanescent waves generated at the first and second lateral surfaces by the second light, are coupled together to be converted into output light.

Abstract: [Object] To provide a fluorescent molded body that obtains high-brightness light emission having high directivity, a solid light source, and an electronic apparatus using the same. [Solving Means] A fluorescent molded body includes a first surface, a second surface, and a lateral surface. Excitation light output from a laser light source is incident on the first surface. The second surface is arranged facing the first surface. The lateral surface is in contact with the first surface and the second surface and has a first inclined surface and a second inclined surface inclined at a blunt angle with respect to the second surface and arranged facing each other. In the fluorescent molded body, evanescent waves are generated at the first inclined surface and the second inclined surface when light emitted due to the fluorescent molded body being excited by the excitation light is totally reflected inside the fluorescent molded body.

Abstract: The present technology relates to a light emitting device and a light emitting method which readily emit high intensity light. Unipolar noise is applied to a plurality of rod-shaped metal antennas of a light emission mechanism including the plurality of metal antennas, radiating light by oscillation of electrons in the metal antennas caused by incident light. The present technology can be applied to a device for emitting light, such as an illumination device, for example.

Abstract: The present technology relates to a light emitting device and a light emitting method which readily emit high intensity light. Unipolar noise is applied to a plurality of rod-shaped metal antennas of a light emission mechanism including the plurality of metal antennas, radiating light by oscillation of electrons in the metal antennas caused by incident light. The present technology can be applied to a device for emitting light, such as an illumination device, for example.

Abstract: An infrared detector includes a source region and a drain region which are formed on a semiconductor substrate, an infrared ray absorbing film as a gate insulating film formed on the semiconductor substrate, and a gate electrode which is formed of a transparent electrode for infrared rays on the gate insulating film, in which, when a predetermined voltage is applied to the gate electrode, a predetermined current flows between the source region and the drain region.

Abstract: An infrared conversion device includes: a substrate (122); and a metal fine particle layer (123) formed on the substrate (122), wherein the metal fine particle layer (123) is formed with metal fine particles (124) and a dielectric material (125) that fills gaps between the metal fine particles (124) and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material (125) by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.

Abstract: An infrared detector includes a source region and a drain region which are formed on a semiconductor substrate, an infrared ray absorbing film as a gate insulating film formed on the semiconductor substrate, and a gate electrode which is formed of a transparent electrode for infrared rays on the gate insulating film, in which, when a predetermined voltage is applied to the gate electrode, a predetermined current flows between the source region and the drain region.

Abstract: An infrared conversion device includes: a substrate (122); and a metal fine particle layer (123) formed on the substrate (122), wherein the metal fine particle layer (123) is formed with metal fine particles (124) and a dielectric material (125) that fills gaps between the metal fine particles (124) and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material (125) by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.

Abstract: A spin-injection magnetoresistance effect element that can avoid use of a large writing current and allows use of a large reading current. The spin-injection magnetoresistance effect element includes layers that may exhibit a tunnel magnetoresistance effect and layers that may exhibit a giant magnetoresistance effect.

Abstract: A magnetic memory 10 includes a memory layer 21 for holding information by a magnetization state of a magnetic material, wherein the memory layer 21 is composed of at least magnetic layers 16, 18 of two layers and a nonmagnetic layer 17 interposed between the magnetic layers 16, 18 of two layers, one magnetic layer 18 of the magnetic layers 16, 18 of two layers has a large product of a magnetization damping constant, a magnetization amount and magnetic anisotropy and a small product of the magnetization amount and the magnetic anisotropy as compared with those of the other magnetic layer. Also, information is recorded on the magnetic memory device 10 with application of an electric current flowing in the memory layer 21. Further, a magnetic memory includes the magnetic memory device 10 to record information with application of an electric current flowing in the recording layer 21.

Abstract: An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from the electrode arranged at an ion beam incidence side of the electrode, thereby preventing or suppressing sputtered particles from redepositing on a master pattern and the processed surface to form burrs, and an ion beam processing method used with the same.

Abstract: The present invention is aimed at enabling a spin-transfer magnetization switching in the random access magnetic memory by reducing a switching current density in the spin-transfer magnetization switching to an order smaller than 10 MA/cm2 and without causing breakdowns neither in the memory element which uses a TMR film nor in the element selection FET. The memory layer in the magnetoresistance effect element comprises a magnetic film having a value of saturation magnetization in a range from 400 kA/m to 800 kA/m. The memory layer comprises a magnetic film which contains one or more magnetic elements selected from the group of, for example, cobalt, iron and nickel, and which further contains a non-magnetic element. The non-magnetic element is contained at a ratio of, for example, 5 at % or more and less than 50 at %. A memory layer 12 in the memory cell has a dimension less than 200 nm?.

Abstract: The present invention provides a spin-injection magnetoresistance effect element that can avoid use of a large writing current and allows use of a large reading current.

Abstract: A method of preparing a ring-formed body comprises the steps of: forming, on a substrate, a column in a columnar form which serves as a core of a ring-formed body; depositing, on both the substrate and the column, a ring-formed body forming film for forming the ring-formed body so that the ring-formed body forming film formed on the substrate and that formed on the column are separated from each other; forming a mask film for covering the ring-formed body forming film; and subjecting the mask film and ring-formed body forming film to anisotropic dry etching so that the films remain on a sidewall of the column, forming a ring-formed body comprised of the ring-formed body forming film having the mask film.

Abstract: A magnetic memory 10 includes a memory layer 21 for holding information by a magnetization state of a magnetic material, wherein the memory layer 21 is composed of at least magnetic layers 16, 18 of two layers and a nonmagnetic layer 17interposed between the magnetic layers 16, 18 of two layers, one magnetic layer 18 of the magnetic layers 16, 18 of two layers has a large product of a magnetization damping constant, a magnetization amount and magnetic anisotropy and a small product of the magnetization amount and the magnetic anisotropy as compared with those of the other magnetic layer. Also, information is recorded on the magnetic memory device 10 with application of an electric current flowing in the memory layer 21. Further, a magnetic memory includes the magnetic memory device 10 to record information with application of an electric current flowing in the recording layer 21.

Abstract: An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from the electrode arranged at an ion beam incidence side of the electrode, thereby preventing or suppressing sputtered particles from redepositing on a master pattern and the processed surface to form burrs, and an ion beam processing method used with the same.

Abstract: The present invention is aimed at enabling a spin-transfer magnetization switching in the random access magnetic memory by reducing a switching current density in the spin-transfer magnetization switching to an order smaller than 10 MA/cm2 and without causing breakdowns neither in the memory element which uses a TMR film nor in the element selection FET. The memory layer in the magnetoresistance effect element comprises a magnetic film having a value of saturation magnetization in a range from 400 kA/m to 800 kA/m. The memory layer comprises a magnetic film which contains one or more magnetic elements selected from the group of, for example, cobalt, iron and nickel, and which further contains a non-magnetic element. The non-magnetic element is contained at a ratio of, for example, 5 at % or more and less than 50 at %. A memory layer 12 in the memory cell has a dimension less than 200 nm?.

Abstract: A method of preparing a ring-formed body comprises the steps of: forming, on a substrate, a column in a columnar form which serves as a core of a ring-formed body; depositing, on both the substrate and the column, a ring-formed body forming film for forming the ring-formed body so that the ring-formed body forming film formed on the substrate and that formed on the column are separated from each other; forming a mask film for covering the ring-formed body forming film; and subjecting the mask film and ring-formed body forming film to anisotropic dry etching so that the films remain on a sidewall of the column, forming a ring-formed body comprised of the ring-formed body forming film having the mask film.

Abstract: Glass is surface reinforced by providing a surface layer which contains an oxide component, typically silicon oxide in more excess than the underlying base glass, the oxide component exhibiting higher chemical or mechanical durability than the base glass itself. A surface of glass is tailored by a dry process, typically by exposure to UV radiation in the presence of ozone such that the oxide component is present more at the surface than in the underlying glass while a heavy metal such as Pb is driven out. A magnetic head having such a surface-reinforced sealing glass for bonding a core block to a slider is highly reliable.

Abstract: Glass is surface reinforced by providing a surface layer which contains an oxide component, typically silicon oxide in more excess than the underlying base glass, the oxide component exhibiting higher chemical or mechanical durability than the base glass itself. A surface of glass is tailored by a dry process, typically by exposure to UV radiation in the presence of ozone such that the oxide component is present more at the surface than in the underlying glass while a heavy metal such as Pb is driven out. A magnetic head having such a surface-reinforced sealing glass for bonding a core block to a slider is highly reliable.