Patents by Inventor Kojiro Yokozawa

Kojiro Yokozawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device and substrate processing apparatus
    Patent number: 9966252
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: May 8, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Yoshiro Hirose, Yosuke Ota, Naonori Akae, Kojiro Yokozawa
  • Method of manufacturing semiconductor device and substrate processing apparatus
    Patent number: 9966251
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: May 8, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Yoshiro Hirose, Yosuke Ota, Naonori Akae, Kojiro Yokozawa
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20150214028
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Application
    Filed: April 7, 2015
    Publication date: July 30, 2015
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Ryota SASAJIMA, Yoshiro HIROSE, Yosuke OTA, Naonori AKAE, Kojiro YOKOZAWA
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20150214042
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Application
    Filed: April 7, 2015
    Publication date: July 30, 2015
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Ryota SASAJIMA, Yoshiro HIROSE, Yosuke OTA, Naonori AKAE, Kojiro YOKOZAWA
  • Method of manufacturing semiconductor device and substrate processing apparatus
    Patent number: 9039838
    Abstract: Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: May 26, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Yoshiro Hirose, Yosuke Ota, Naonori Akae, Kojiro Yokozawa
  • Heat treatment apparatus and method of manufacturing substrates
    Patent number: 8963051
    Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: February 24, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Tomoharu Shimada, Akira Morohashi, Kojiro Yokozawa, Keishin Yamazaki
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20130019804
    Abstract: Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Applicant: Hitachi-Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Yoshiro Hirose, Yosuke Ota, Naonori Ake, Kojiro Yokozawa
  • Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus
    Patent number: 8252701
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: August 28, 2012
    Assignee: Hitachi-Kokusai Electric Inc.
    Inventors: Ryota Sasajima, Yoshiro Hirose, Yosuke Ota, Naonori Akae, Kojiro Yokozawa
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20110130011
    Abstract: Provided is a method of manufacturing a semiconductor device.
    Type: Application
    Filed: November 18, 2010
    Publication date: June 2, 2011
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Ryota SASAJIMA, Yoshiro HIROSE, Yosuke OTA, Naonori AKAE, Kojiro YOKOZAWA
  • Heat Treatment Apparatus and Method of Manufacturing Substrates
    Publication number: 20080190910
    Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction lube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.
    Type: Application
    Filed: September 15, 2005
    Publication date: August 14, 2008
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tomoharu Shimada, Akira Morohashi, Kojiro Yokozawa, Keishin Yamazaki