Patents by Inventor Kok Chan
Kok Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240153917Abstract: Stacked microfeature devices and associated methods of manufacture are disclosed. A package in accordance with one embodiment includes first and second microfeature devices having corresponding first and second bond pad surfaces that face toward each other. First bond pads can be positioned at least proximate to the first bond pad surface and second bond pads can be positioned at least proximate to the second bond pad surface. A package connection site can provide electrical communication between the first microfeature device and components external to the package. A wirebond can be coupled between at least one of the first bond pads and the package connection site, and an electrically conductive link can be coupled between the first microfeature device and at least one of the second bond pads of the second microfeature device. Accordingly, the first microfeature device can form a portion of an electrical link to the second microfeature device.Type: ApplicationFiled: January 12, 2024Publication date: May 9, 2024Inventors: Mung Suan Heng, Kok Chua Tan, Vince Chan Seng Leong, Mark S. Johnson
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Publication number: 20120270351Abstract: A method of removal of a first and second sacrificial layer wherein an O2 plasma or an O2-containing environment is introduced to a cavity and a gap region through a plurality of via holes in a cavity capping material.Type: ApplicationFiled: July 2, 2012Publication date: October 25, 2012Applicant: International Business Machines CorporationInventors: Leena Paivikki BUCHWALTER, Kevin Kok CHAN, Timothy Joseph DALTON, Christopher Vincent JAHNES, Jennifer Louise LUND, Kevin Shawn PETRARCA, James Louis SPEIDELL, James Francis ZIEGLER
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Patent number: 8269291Abstract: A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane.Type: GrantFiled: January 14, 2011Date of Patent: September 18, 2012Assignee: International Business Machines CorporationInventors: Leena Paivikki Buchwalter, Kevin Kok Chan, Timothy Joseph Dalton, Christopher Vincent Jahnes, Jennifer Louise Lund, Kevin Shawn Petraraca, James Louis Speidell, James Francis Ziegler
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Patent number: 7943412Abstract: A method of formation of a microelectromechanical system (MEMS) resonator or filter which is compatible with integration with any analog, digital, or mixed-signal integrated circuit (IC) process, after or concurrently with the formation of the metal interconnect layers in those processes, by virtue of its materials of composition, processing steps, and temperature of fabrication is presented. The MEMS resonator or filter incorporates a lower metal level, which forms the electrodes of the MEMS resonator or filter, that may be shared with any or none of the existing metal interconnect levels on the IC. It further incorporates a resonating member that is comprised of at least one metal layer for electrical connection and electrostatic actuation, and at least one dielectric layer for structural purposes. The gap between the electrodes and the resonating member is created by the deposition and subsequent removal of a sacrificial layer comprised of a carbon-based material.Type: GrantFiled: December 10, 2002Date of Patent: May 17, 2011Assignee: International Business Machines CorporationInventors: Leena Paivikki Buchwalter, Kevin Kok Chan, Timothy Joseph Dalton, Christopher Vincent Jahnes, Jennifer Louise Lund, Kevin Shawn Petrarca, James Louis Speidell, James Francis Ziegler
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Publication number: 20110109405Abstract: A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane.Type: ApplicationFiled: January 14, 2011Publication date: May 12, 2011Applicant: International Business Machines CorporationInventors: Leena Paivikki Buchwalter, Kevin Kok Chan, Timothy Joseph Dalton, Christopher Vincent Jahnes, Jennifer Louise Lund, Kevin Shawn Petrarca, James Louis Speidell, James Francis Ziegler
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Patent number: 7741165Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.Type: GrantFiled: May 12, 2008Date of Patent: June 22, 2010Assignee: International Business Machines CorporationInventors: Kevin Kok Chan, Robert J. Miller, Erin C. Jones, Atul Ajmera
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Publication number: 20090108381Abstract: A method of formation of a microelectromechanical system (MEMS) resonator or filter which is compatible with integration with any analog, digital, or mixed-signal integrated circuit (IC) process, after or concurrently with the formation of the metal interconnect layers in those processes, by virtue of its materials of composition, processing steps, and temperature of fabrication is presented. The MEMS resonator or filter incorporates a lower metal level, which forms the electrodes of the MEMS resonator or filter, that may be shared with any or none of the existing metal interconnect levels on the IC. It further incorporates a resonating member that is comprised of at least one metal layer for electrical connection and electrostatic actuation, and at least one dielectric layer for structural purposes. The gap between the electrodes and the resonating member is created by the deposition and subsequent removal of a sacrificial layer comprised of a carbon-based material.Type: ApplicationFiled: December 10, 2002Publication date: April 30, 2009Applicant: International Business Machines CorporationInventors: Leena Paivikki Buchwalter, Kevin Kok Chan, Timothy Joseph Dalton, Christopher Vincent Jahnes, Jennifer Louise Lund, Kevin Shawn Petrarca, James Louis Speidell, James Francis Ziegler
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Publication number: 20080248635Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.Type: ApplicationFiled: May 12, 2008Publication date: October 9, 2008Applicant: International Business Machines CorporationInventors: Kevin Kok Chan, Rober J. Miller, Erin C. Jones, Atul Ajmera
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Patent number: 7387924Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.Type: GrantFiled: September 18, 2006Date of Patent: June 17, 2008Assignee: International Business Machines CorporationInventors: Kevin Kok Chan, Robert J. Miller, Erin C. Jones, Atul Ajmera
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Publication number: 20070245414Abstract: Embodiments of proxy authentication and indirect certificate chaining are described herein. In an implementation, authentication for a client occurs via a proxy service. Proxy service communicates between client and server, and caches security tokens on behalf of the client. In an implementation, trustworthiness of certificate presented to a client to establish trust is determined utilizing a signed data package which incorporates a plurality of known certificates. The presented certificate is verified without utilizing root certificates installed on the client device.Type: ApplicationFiled: April 14, 2006Publication date: October 18, 2007Applicant: Microsoft CorporationInventors: Kok Chan, Colin Chow, Trevin Chow, Lin Huang, Naresh Jain, Wei Jiang, Yordan Rouskov, Pui-Yin Wong, Ismail Paya, Ryan Hurst
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Publication number: 20070118875Abstract: An integrated authentication service is described which may receive a bundled request from one or more clients. One or more of the described techniques may be utilized to provide, in response to a single bundled request, a token for proof of identity and a certificate for establishing secure communications.Type: ApplicationFiled: November 18, 2005Publication date: May 24, 2007Applicant: Microsoft CorporationInventors: Trevin Chow, Winfred Wong, Yordan Rouskov, Kok Chan, Wei Jiang, Colin Chow, Sanjeev Nagvekar, Matt Sullivan, Kalyan Sayyaparaju, Dilip Pai, Avinash Belur
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Patent number: 7183175Abstract: A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench extending downward from the substrate top surface and penetrating into the SiGe based layer, forming a sidewall in the substrate. An epitaxial Si liner is selectively deposited onto the trench sidewall, and subsequently thermally oxidized. The trench is filled with a trench dielectric, which protrudes above the substrate top surface.Type: GrantFiled: July 1, 2005Date of Patent: February 27, 2007Assignee: International Business Machines CorporationInventors: Steven John Koester, Klaus Dietrich Beyer, Michael John Hargrove, Kern Rim, Kevin Kok Chan
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Patent number: 7169674Abstract: A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.Type: GrantFiled: February 28, 2005Date of Patent: January 30, 2007Assignee: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, Jr., Kevin Kok Chan, Christopher Peter D'Emic, Evgeni Gousev, Supratik Guha, Paul C. Jamison, Lars-Ake Ragnarsson
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Patent number: 7135391Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.Type: GrantFiled: May 21, 2004Date of Patent: November 14, 2006Assignee: International Business Machines CorporationInventors: Kevin Kok Chan, Rober J. Miller, Erin C. Jones, Atul Ajmera
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Patent number: 6987050Abstract: A method (and resulting structure) for fabricating a silicide for a semiconductor device, includes depositing a metal or an alloy thereof on a silicon substrate, reacting the metal or the alloy to form a first silicide phase, etching any unreacted metal, depositing a silicon cap layer over the first silicide phase, reacting the silicon cap layer to form a second silicide phase, for the semiconductor device, and etching any unreacted silicon. The substrate can be either a silicon-on-insulator (SOI) substrate or a bulk silicon substrate.Type: GrantFiled: July 11, 2001Date of Patent: January 17, 2006Assignee: International Business Machines CorporationInventors: Cyril Cabral, Jr., Kevin Kok Chan, Guy Moshe Cohen, Christian Lavoie, Ronnen Andrew Roy, Paul Michael Solomon
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Publication number: 20060007274Abstract: An embodiment of the invention provides a mechanism for controlling at least one ink transmission module, which controls a supply of ink using received control rotation. The mechanism includes an input, to receive control rotation. The mechanism also includes an output, to selectively transfer the control rotation to the ink transmission module. A control system is also provided to control the selective transfer of the output. The mechanism is moveable into a disengaged configuration by the control system, in which the output does not transfer rotation of the input to the ink transmission module, by a first predetermined sequence of rotations of the input, and into an engaged configuration, in which the output transfers rotation of the input to the ink transmission module, by a second predetermined sequence of rotations of the input.Type: ApplicationFiled: July 9, 2004Publication date: January 12, 2006Inventors: Pui Huang, Seng Koh, Kok Chan, Wee Tan
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Publication number: 20050234931Abstract: Method for providing an interface to a function that manages a plurality of entities. Computer-executable instructions receive a request to implement a change in configuration data. The configuration data is stored in a memory area and relates to an operation of one or more entities. In response to the received request, computer-executable instructions identify a plurality of the entities affected by the change and implement the change for the identified plurality of entities in accordance with the function.Type: ApplicationFiled: April 6, 2004Publication date: October 20, 2005Inventors: Ying-Kin Yip, Kok Chan, Rui Chen, Rahul Newaskar, Anthony Toivonen
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Publication number: 20050228998Abstract: A system and method for retrieving certificate of trust information for a certificate validation process. Fetching servers periodically retrieve certificate revocation lists (CRLs) from servers maintained by various certificate issuers. The revoked certificate data included in the retrieved CRLs are stored in a central database. An authentication server receives a request from a client for access to a secure service and initiates a validation process. The authentication server retrieves revoked certificate data from the central database and compares the retrieved revoked certificate data to certificate of trust information received from the client along with the request. The authentication server denies access to the secure information if the certificate of trust information matches revoked certificate data from the central database, allows access if the certificate of trust information does not match revoked certificate data from the central database.Type: ApplicationFiled: April 2, 2004Publication date: October 13, 2005Inventors: Kok Chan, Wei Jiang, Wei-Quiang Guo
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Publication number: 20050222891Abstract: A system and method for expanding recurring calendar events such that the retrieval of recurring calendar appointments is expedited. A recurring appointment is saved as a data structure including a recurrence pattern. When a recurring appointment is saved by a client that has sufficient processing and memory resources to perform the computations necessary to expand recurring appointments (i.e., a thick client), a background thread is notified. The background thread increases its priority to normal when idle processing capacity is available and calls a routine requesting calendar information for a defined time period. The routine causes the expansion of the data structure into the individual instances of the recurring appointment for a defined time period, and the individual instances are saved for later retrieval. A later query from a client without sufficient processing and memory resources to perform the calculations necessary to expand recurring appointments (i.e.Type: ApplicationFiled: May 24, 2005Publication date: October 6, 2005Applicant: Microsoft CorporationInventors: Kok Chan, Dennis Kiilerich
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Publication number: 20050223216Abstract: A system and method for securely roaming private data from a first client computer to a second client computer linked via a communication network. A user of the first client computer executes a home client application and designates private data for roaming. The home client application generates a first key in response to a password, and encrypts the designated private data as a function of the first key. The server receives and stores the encrypted private data. A user of the second computer executes a roaming client application and requests transfer of the encrypted private data from the server. The roaming client application generates the first key in response to the password, and decrypts encrypted private data transferred from the server to obtain the private data. The invention further provides users the ability to retrieve encrypted private from the server even when the user cannot remember the password associated with the first key. Also, the server has no knowledge of the private data nor the keys.Type: ApplicationFiled: April 2, 2004Publication date: October 6, 2005Inventors: Kok Chan, Dafina Toncheva, Baskaran Dharmarajan, Rahul Newaskar, Adam Back