Abstract: A mesh decoding device 200 according to the present invention includes a circuit, wherein the circuit: subdivides a base mesh and output an initial subdivided mesh; calculates a normal for each vertex forming the initial subdivided mesh; and adjusts a subdivided mesh by dividing a subdivided face after moving a position of the vertex forming a face of the initial subdivided mesh.

Abstract: A mesh decoding device 200 according to the present invention includes: an atlas data decoding unit 207 decodes an atlas bit stream to generate and output control information; a base mesh decoding unit 202 decodes the control information and a base mesh bit stream to generate and output a base mesh; a subdivision unit 203 outputs a subdivision mesh and a subdivision vertex normal line using the control information and the base mesh as inputs; a mesh decoding unit 204 generates a decoded mesh using the control information, a displacement, the subdivision mesh, and the subdivision vertex normal line as inputs; and a boundary correction unit 208 corrects a sub-mesh boundary for the decoded mesh and output a boundary corrected decoded mesh.

Abstract: A mesh decoding device 200 according to the present invention includes: an atlas data decoding unit 207 configured to decode a syntax defining a maximum value of the number of iterations of subdivision, wherein the syntax decoded by the atlas data decoding unit 207 has a value of 15 or less.

Abstract: A mesh decoding device (200) according to the present invention includes: an atlas data decoding unit (207) configured to decode an atlas bit stream to generate and output control information. According to the present invention, it is possible to efficiently compress a displacement amount.

Abstract: A mesh decoding device (200) according to the present invention includes: an atlas data decoding unit (207) that decodes an atlas bit stream to generate and output first control information; a base mesh decoding unit (202) that decodes a base mesh bit stream to generate and output second control information and a base mesh; a subdivision unit (203) that outputs a subdivision mesh and a subdivision vertex normal using the first control information, the second control information, and the base mesh as inputs; and a mesh decoding unit (204) that generates a decoded mesh using the first control information, the displacement amount, the subdivision mesh, and the subdivision vertex normal as inputs.

Abstract: A mesh decoding device 200 includes a circuit that: outputs a base mesh, outputs an intra prediction residual, and decodes a displacement by performing intra prediction of a displacement of a subdivided vertex based on the outputted base mesh to calculate an intra prediction value, and adding the calculated intra prediction value and the outputted intra prediction residual.

Abstract: The present invention enables setting of a decoding method according to characteristics of a mesh in a patch and can reduce the number of bits of a displacement. A mesh decoding device 200 according to the present invention includes a circuit, wherein the circuit: decodes an atlas bit stream and output patch information and frame information; changes a subdivision method based on the patch information and the frame information; and changes an inverse quantization method based on the patch information.

Abstract: A mesh decoding device 200 according to the present invention includes a circuit, wherein the circuit: subdivides a base mesh and output an initial subdivided mesh; calculates a normal for each vertex forming the initial subdivided mesh; and adjusts a subdivided mesh by dividing a subdivided face after moving a position of the vertex forming a face of the initial subdivided mesh.

Abstract: A power semiconductor according to the present disclosed technology is a case-type power semiconductor device, in which a case is formed by mixing a heavy element material and a conductive material with a material having high processability, the conductive material is not a light metal, and the electric resistance of the case is 1.0 E5 to 1.0 E11 [?]. In addition, the power semiconductor according to the present disclosed technology is a transfer mold-type power semiconductor device, and includes a transfer mold-type sealing resin including a sealing resin containing a heavy element material and a sealing resin containing a conductive material, in which the conductive material of the sealing resin containing a conductive material is not a light metal.