Patents by Inventor Koki MUKAIYAMA

Koki MUKAIYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240030010
    Abstract: An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.
    Type: Application
    Filed: July 25, 2023
    Publication date: January 25, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Koki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20240006168
    Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
    Type: Application
    Filed: September 18, 2023
    Publication date: January 4, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Satoshi OHUCHIDA, Koki MUKAIYAMA, Yusuke WAKO, Maju TOMURA, Yoshihide KIHARA
  • Patent number: 11798793
    Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
    Type: Grant
    Filed: January 25, 2022
    Date of Patent: October 24, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Ohuchida, Koki Mukaiyama, Yusuke Wako, Maju Tomura, Yoshihide Kihara
  • Publication number: 20230307245
    Abstract: A plasma processing method executed by a plasma processing apparatus having a chamber is provided. The method includes: (a) providing a substrate having a silicon containing film and a mask on the silicon containing film; and (b) etching the silicon containing film, the (b) including (b-1) etching the silicon containing film by using a plasma generated from a first processing gas containing a hydrogen fluoride gas and a tungsten containing gas, and (b-2) etching the silicon containing film by using a plasma generated from a second processing gas containing a hydrogen fluoride gas, the second processing gas not containing a tungsten containing gas, or containing a tungsten containing gas at a flow ratio smaller than a flow ratio of the tungsten containing gas in the first processing gas.
    Type: Application
    Filed: March 23, 2023
    Publication date: September 28, 2023
    Applicant: Tokyo Electron Limited
    Inventors: Koki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA, Atsushi TAKAHASHI, Takatoshi ORUI
  • Publication number: 20230135998
    Abstract: A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.
    Type: Application
    Filed: November 1, 2022
    Publication date: May 4, 2023
    Inventors: Satoshi OHUCHIDA, Koki MUKAIYAMA, Noboru SAITO, Yoshihide KIHARA, Maju TOMURA
  • Publication number: 20220238315
    Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
    Type: Application
    Filed: January 25, 2022
    Publication date: July 28, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Satoshi OHUCHIDA, Koki MUKAIYAMA, Yusuke WAKO, Maju TOMURA, Yoshihide KIHARA