Patents by Inventor Koki MUKAIYAMA
Koki MUKAIYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240213032Abstract: An etching method includes (a) providing a substrate having an etching target film and a mask on the etching target film, on a substrate support within a chamber; (b) etching the etching target film to form a recess under a condition that a pressure within the chamber is controlled to a first pressure, and a temperature of the substrate support is controlled to a first temperature; and (c) forming a metal-containing film on a portion of a side wall of the recess by using plasma generated from a processing gas containing a metal-containing gas, under a condition that the pressure within the chamber is controlled to a second pressure higher than the first pressure, and the temperature of the substrate support is controlled to a second temperature equal to or less than the first temperature.Type: ApplicationFiled: December 26, 2023Publication date: June 27, 2024Applicant: Tokyo Electron LimitedInventors: Koki MUKAIYAMA, Takuya SAWANO
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Publication number: 20240203698Abstract: Provided is an etching method that includes: (a) preparing a substrate, the substrate including a first region and a second region below the first region, the first region containing a first material and having at least one opening, the second region containing a second material that is different from the first material and contains silicon; and (b) etching the second region through the at least one opening by using a plasma generated from a processing gas containing a fluorine containing gas and a CxHyClz (x and y are each an integer of 0 or more, x+y?1, and z is an integer of 1 or more) gas.Type: ApplicationFiled: December 20, 2023Publication date: June 20, 2024Applicant: Tokyo Electron LimitedInventors: Ryo MATSUBARA, Koki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA, Satoshi OHUCHIDA, Takuto KIKUCHI
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Publication number: 20240112919Abstract: A method of processing a substrate that includes: flowing dioxygen (O2) and a hydrogen-containing gas into a plasma processing chamber that is configured to hold the substrate, the substrate including an organic layer and a patterned etch mask, the hydrogen-containing gas including dihydrogen (H2), a hydrocarbon, or hydrogen peroxide (H2O2); generating an oxygen-rich plasma while flowing the gases; maintaining a temperature of the substrate in the plasma processing chamber between ?150° C. and ?50° C.; and while maintaining the temperature, exposing the substrate to the oxygen-rich plasma to form a recess in the organic layer.Type: ApplicationFiled: September 29, 2022Publication date: April 4, 2024Inventors: Du Zhang, Maju Tomura, Koki Mukaiyama, Tomohiko Niizeki, Yoshihide Kihara, Mingmei Wang
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Publication number: 20240030010Abstract: An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.Type: ApplicationFiled: July 25, 2023Publication date: January 25, 2024Applicant: Tokyo Electron LimitedInventors: Koki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA
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Publication number: 20240006168Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.Type: ApplicationFiled: September 18, 2023Publication date: January 4, 2024Applicant: Tokyo Electron LimitedInventors: Satoshi OHUCHIDA, Koki MUKAIYAMA, Yusuke WAKO, Maju TOMURA, Yoshihide KIHARA
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Patent number: 11798793Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.Type: GrantFiled: January 25, 2022Date of Patent: October 24, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Satoshi Ohuchida, Koki Mukaiyama, Yusuke Wako, Maju Tomura, Yoshihide Kihara
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Publication number: 20230307245Abstract: A plasma processing method executed by a plasma processing apparatus having a chamber is provided. The method includes: (a) providing a substrate having a silicon containing film and a mask on the silicon containing film; and (b) etching the silicon containing film, the (b) including (b-1) etching the silicon containing film by using a plasma generated from a first processing gas containing a hydrogen fluoride gas and a tungsten containing gas, and (b-2) etching the silicon containing film by using a plasma generated from a second processing gas containing a hydrogen fluoride gas, the second processing gas not containing a tungsten containing gas, or containing a tungsten containing gas at a flow ratio smaller than a flow ratio of the tungsten containing gas in the first processing gas.Type: ApplicationFiled: March 23, 2023Publication date: September 28, 2023Applicant: Tokyo Electron LimitedInventors: Koki MUKAIYAMA, Maju TOMURA, Yoshihide KIHARA, Atsushi TAKAHASHI, Takatoshi ORUI
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Publication number: 20230135998Abstract: A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.Type: ApplicationFiled: November 1, 2022Publication date: May 4, 2023Inventors: Satoshi OHUCHIDA, Koki MUKAIYAMA, Noboru SAITO, Yoshihide KIHARA, Maju TOMURA
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Publication number: 20220238315Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.Type: ApplicationFiled: January 25, 2022Publication date: July 28, 2022Applicant: Tokyo Electron LimitedInventors: Satoshi OHUCHIDA, Koki MUKAIYAMA, Yusuke WAKO, Maju TOMURA, Yoshihide KIHARA