Abstract: A method capable of easily and simply manufacturing a conductive member pattern such as a nano-size fine wiring or electrode is disclosed. Specifically, the disclosed method for manufacturing a conductive member pattern includes the steps of: forming an ion-exchangeable resin pattern on a substrate by using a photosensitive resin; making the resin pattern absorb a metal component-containing solution; and baking the resin pattern having absorbed the metal component-containing solution, wherein the width and the ratio “width/height” of the resin pattern before baking are 1 ?m or less and 5 or less, respectively.

Abstract: The present invention provides an electron-emitting device which does not need a fresh electrode to be added thereto, has excellent convergence and shows little change of a discharged electric current for short and long periods of time, and an image display apparatus using the device. The electron-emitting device includes at least a pair of device electrodes formed on an insulating substrate, and a plurality of electroconductive films which are formed so as to connect the device electrodes to each other and have gaps therein, wherein the surface of a region which is at least adjacent to the gap between the electroconductive films and is not covered with the electroconductive film is higher than the surface of the electroconductive film.

Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Abstract: A base body includes a first part and a second part. The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.

Abstract: An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.

Abstract: An electron-emitting device is provided with improved electron emitting efficiency. An electron-emitting device includes first and second electroconductive films disposed on a surface of a substrate in opposition to each other to form a gap between ends of the first and second electroconductive films. The end of the first electroconductive film includes a portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less. Let d2 denote a minimum distance between the end of the first electroconductive film which is away from the portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less by the minimum distance d1 and the end of the second electroconductive film. The relation of d2/d1?1.2 is satisfied.

Abstract: An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.

Abstract: An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.

Abstract: A method capable of easily and simply manufacturing a conductive member pattern such as a nano-size fine wiring or electrode is disclosed. Specifically, the disclosed method for manufacturing a conductive member pattern includes the steps of: forming an ion-exchangeable resin pattern on a substrate by using a photosensitive resin; making the resin pattern absorb a metal component-containing solution; and baking the resin pattern having absorbed the metal component-containing solution, wherein the width and the ratio “width/height” of the resin pattern before baking are 1 ?m or less and 5 or less, respectively.

Abstract: An image display apparatus uses electron-emitting devices each having: a pair of device electrodes on an insulating substrate; and an electroconductive film connecting the device electrodes. The insulating substrate has concave portions in a gap between the device electrodes. The film has opening portions having a first gap in a region adjacent to the opening portions along such a gap. A carbon film having a second gap is formed in the first gap and has extending portions extending from side surfaces of the concave portions toward the bottom. The extending portions of the adjacent carbon films are not coupled.

Abstract: An electron emitter retaining a stable electron emission property with minimized fluctuation over a long period of time is provided. Also, a long-life image display apparatus that exhibits little fluctuation over a long period of time, by using electron emitters that retain a stable electron emission property with minimized fluctuation over long period of time is provided.

Abstract: The present invention provides an electron-emitting device which does not need a fresh electrode to be added thereto, has excellent convergence and shows little change of a discharged electric current for short and long periods of time, and an image display apparatus using the device. The electron-emitting device includes at least a pair of device electrodes formed on an insulating substrate, and a plurality of electroconductive films which are formed so as to connect the device electrodes to each other and have gaps therein, wherein the surface of a region which is at least adjacent to the gap between the electroconductive films and is not covered with the electroconductive film is higher than the surface of the electroconductive film.

Abstract: A method for manufacturing a precursor to an electron-emitting device includes the steps of preparing an electron-emitting member, and alternately exposing the electron-emitting member to an oxygen-containing gas and a metal-containing gas.

Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Abstract: A base body includes a first part and a second part, The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.

Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Abstract: A method for manufacturing a precursor to an electron-emitting device includes the steps of preparing an electron-emitting member, and alternately exposing the electron-emitting member to an oxygen-containing gas and a metal-containing gas.

Abstract: An electron-emitting device is provided with improved electron emitting efficiency. An electron-emitting device includes first and second electroconductive films disposed (21a, 21b) on a surface of a substrate in opposition to each other to form a gap (8) between ends of the first and second electroconductive films. The end of the first electroconductive film includes a portion (A) the minimum distance d1 from which to the second electroconductive film (B) is 10 nm or less. Let d2 denote a minimum distance between the end of the first electroconductive film which is away from the portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less by the minimum distance d1 and the end of the second electroconductive film. The relation of d2/d1?1.2 is satisfied.

Abstract: An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.

Abstract: In a process of reducing a resistivity of a polymer film for carbonization in a surface conduction electron-emitting device, by irradiating an energy beam onto the polymer film, when an energy intensity of the beam given in a unit area in a unit time is assumed to be W W/m2, W satisfies a formula W?2×T×(?sub·Csub·?sub/?)1/2, where T is defined as a temperature ° C. at which the polymer film is heated for one hour in a vacuum degree of 1×10?4 Pa to reduce a resistivity of the polymer film to 0.1 ?·cm, Csub is a specific heat J/kg·K of the substrate, ?sub is a specific gravity kg/m3 of the substrate, ?sub is a heat conductivity W/m·K of the substrate, and ? is an irradiation time in the range of 10?9 sec to 10 sec.