Abstract: In order to provide a technique for increasing practicality of an array antenna apparatus, included are: a base body (11) extending parallel to a Z-X plane in an orthogonal coordinate system X-Y-Z; a plurality of first antenna elements (21L), arranged on an edge of the X-directional side of one surface of the base body, and configured to emit a radio wave at least in the X-direction; a plurality of second antenna elements (21R), arranged on an edge of the X-directional side of the other surface of the base body, and configured to emit a radio wave at least in the X-direction. The plurality of first antenna elements is arranged in the Z-direction, the plurality of second antenna elements is arranged in the Z-direction, and the first antenna elements and the second antenna elements are located alternately viewed in the Z-direction.

Abstract: A radio frequency power amplifier includes: a transistor configured to amplify a signal at a selected signal frequency; a first line connected to an output of the transistor and disposed on a printed circuit board; and a second line and a third line branched from a rear stage of the first line and disposed on the printed circuit board. The second line is configured to set impedance for the selected signal frequency or a double-wave frequency of the selected signal frequency.

Abstract: There is provided a high frequency switch having a reduced circuit scale while maintaining satisfactory harmonic characteristics in a transfer path of a high frequency signal. The high frequency switch includes: at least one transmission port; at least one reception port; a common port; transmission side series switches each including a body contact type FET; transmission side shunt switches each including a body contact type FET; reception side series switches each including a body contact type FET; and reception side shunt switches each including at least one floating body type FET.

Abstract: There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.

Abstract: There is provided a high frequency switch having a reduced circuit scale while maintaining satisfactory harmonic characteristics in a transfer path of a high frequency signal. The high frequency switch includes: at least one transmission port; at least one reception port; a common port; transmission side series switches each including a body contact type FET; transmission side shunt switches each including a body contact type FET; reception side series switches each including a body contact type FET; and reception side shunt switches each including at least one floating body type FET.

Abstract: There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.

Abstract: There is provided a microstrip line—waveguide conversion structure, an integrated circuit package for high frequency signals provided with this conversion structure, and a manufacturing method therefor, which are capable of reducing the passage loss even when frequencies in the millimeter band are employed, which has a simple structure, and which is capable of application to broadband frequencies.

Abstract: There is provided a microstrip line-waveguide conversion structure, an integrated circuit package for high frequency signals provided with this conversion structure, and a manufacturing method therefor, which are capable of reducing the passage loss even when frequencies in the millimeter band are employed, which has a simple structure, and which is capable of application to broadband frequencies. This package is provided with a base member 4 on which an MMIC 2 and the like are installed, a dielectric substrate 5 which is provided on this base member 4, a microstrip line 6 which is provided on the dielectric substrate 5 and which is electrically connected to the integrated circuit for high frequency signals, a frame member 7, in which an opening 7a which encloses the integrated circuit for high frequency signals is formed, and in which a concave portion 7b which engages with the dielectric substrate 5 is formed, and a cover member 8 which seals the opening 7a of frame member 7 and creates an airtight seal.