Patents by Inventor Koki Yano

Koki Yano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210020784
    Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
    Type: Application
    Filed: September 24, 2020
    Publication date: January 21, 2021
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki YANO, Hirokazu KAWASHIMA, Kazuyoshi INOUE
  • Patent number: 10833201
    Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
    Type: Grant
    Filed: March 21, 2016
    Date of Patent: November 10, 2020
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue
  • Patent number: 10644163
    Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: May 5, 2020
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue
  • Patent number: 10499773
    Abstract: A bacteria removing water discharge device used for a water supply facility is provided. The device includes: a bacteria removing water generating part denaturing tap water to generate bacteria removing water; a bacteria removing water discharge part, the part including a water storage part storing the bacteria removing water temporally, a water discharge port discharging the bacteria removing water stored in the water storage part onto a water receiving part of the water supply facility; and a controller, the controller executing a bacteria removing mode discharging the bacteria removing water from the bacteria removing water discharge part to the water receiving part, and a residual water drain mode draining at least a portion of the bacteria removing water remained in the water storage part after executing the bacteria removing mode.
    Type: Grant
    Filed: March 8, 2016
    Date of Patent: December 10, 2019
    Assignee: TOTO LTD.
    Inventors: Masahiro Kuroishi, Takamasa Suzuki, Yusuke Nogoshi, Kenta Suzuki, Muneyuki Urata, Koki Nagano, Yukiko Yano, Yusuke Nakamura
  • Patent number: 10350575
    Abstract: A reactor has a heat exchanging body including therein a heat medium flow channel in which heat medium flows, and a reaction flow channel in which a reaction fluid flows, to exchange heat between the heat medium and the reaction fluid. A heat transfer promoter is provided in the heat medium flow channel and comes in close contact with the heat exchanging body to promote heat transfer between the heat medium and the heat exchanging body. The heat transfer promoter is an assembly of partial heat transfer promoters of a plurality of types. Replacing the partial heat transfer promoter with another type one, temperature distribution in the heat exchanging body is adjusted.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: July 16, 2019
    Assignee: IHI CORPORATION
    Inventors: Akihisa Yano, Tatsuya Oka, Takahito Akita, Taiga Yamamoto, Hideshi Shibuya, Yushi Kameoka, Yusuke Takeuchi, Koki Yasui, Takuya Yoshinoya
  • Patent number: 10286375
    Abstract: A reactor has a heat exchanging body having a heat medium flow channel that a heat medium fluid flows and a reaction flow channel that a reaction fluid flow, and at least one detection part for detecting temperature of a fluid in one or both of the heat medium flow channel and the reaction flow channel. At least one installation hole extends in a skew position to the flow channel and includes an opening portion communicating with the flow channel. The detection part is installed at the opening portion and contacts the flowing fluid. At least one fluid guide hole is formed along the flow channel from the opening portion of the installation hole.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: May 14, 2019
    Assignee: IHI CORPORATION
    Inventors: Yusuke Takeuchi, Akihisa Yano, Tatsuya Oka, Takahito Akita, Taiga Yamamoto, Hideshi Shibuya, Yushi Kameoka, Koki Yasui
  • Publication number: 20170263786
    Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
    Type: Application
    Filed: May 25, 2017
    Publication date: September 14, 2017
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA
  • Patent number: 9691910
    Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: June 27, 2017
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Masatoshi Shibata, Emi Kawashima, Koki Yano, Hiromi Hayasaka
  • Publication number: 20170141240
    Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.
    Type: Application
    Filed: December 28, 2016
    Publication date: May 18, 2017
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA
  • Patent number: 9570631
    Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: February 14, 2017
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Masatoshi Shibata, Emi Kawashima, Koki Yano, Hiromi Hayasaka
  • Publication number: 20160211386
    Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.
    Type: Application
    Filed: August 8, 2014
    Publication date: July 21, 2016
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA
  • Publication number: 20160201187
    Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
    Type: Application
    Filed: March 21, 2016
    Publication date: July 14, 2016
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki YANO, Hirokazu KAWASHIMA, Kazuyoshi INOUE
  • Publication number: 20160197202
    Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
    Type: Application
    Filed: August 8, 2014
    Publication date: July 7, 2016
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA
  • Patent number: 9269573
    Abstract: To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: February 23, 2016
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Futoshi Utsuno, Masashi Kasami, Kenji Goto, Hirokazu Kawashima
  • Patent number: 9243318
    Abstract: A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 ?m3 or more in an amount of 0.03 vol % or less.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: January 26, 2016
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Shigeo Matsuzaki, Koki Yano, Makoto Ando, Kazuaki Ebata, Masayuki Itose
  • Patent number: 9214519
    Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.99??(4).
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: December 15, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Masayuki Itose, Mami Nishimura, Misa Sunagawa, Masashi Kasami, Koki Yano
  • Patent number: 9209257
    Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: December 8, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Futoshi Utsuno, Kazuyoshi Inoue, Hirokazu Kawashima, Masashi Kasami, Koki Yano, Kota Terai
  • Patent number: 9202603
    Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: December 1, 2015
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Kazuyoshi Inoue, Nobuo Tanaka
  • Patent number: 9153438
    Abstract: An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: October 6, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Koki Yano, Kazuyoshi Inoue
  • Patent number: 9136338
    Abstract: Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: September 15, 2015
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue