Abstract: A wafer processing method is used in processing a wafer including a device area and a peripheral marginal area surrounding the device area. The device area has a plurality of devices and an electrode connected to each device. The wafer processing method includes the steps of cutting a first area of the peripheral marginal area, fixing the front side of the wafer through an adhesive to a carrier substrate, grinding a back side of the wafer, supplying a chemical solution to the back side of the wafer to thereby etch the wafer such that the electrode projects from the back side of the wafer, forming an insulating film on the back side of the wafer, cutting a second area of the peripheral marginal area, the second area being not in contact with the adhesive, thereby removing the second area, and polishing the insulating film.

Abstract: An edge trimming apparatus includes a chuck table that causes a ring-shaped groove with an outer diameter smaller than the outer diameter of a wafer to communicate with a suction source to hold under suction a lower surface of the wafer by the ring-shaped groove, a cutting unit that rotates a cutting blade and annularly cuts a circumferential part of the wafer held by the chuck table, and a cleaning unit that cleans a region outside the ring-shaped groove in the upper surface of the table and the upper surface of the table including the ring-shaped groove. The cleaning unit is positioned to the region outside the ring-shaped groove in the upper surface of the table and the upper surface of the chuck table including the ring-shaped groove, and the chuck table is rotated to clean the ring-shaped groove and the upper surface.

Abstract: A wafer processing method is used in processing a wafer including a device area and a peripheral marginal area surrounding the device area. The device area has a plurality of devices and an electrode connected to each device. The wafer processing method includes the steps of cutting a first area of the peripheral marginal area, fixing the front side of the wafer through an adhesive to a carrier substrate, grinding a back side of the wafer, supplying a chemical solution to the back side of the wafer to thereby etch the wafer such that the electrode projects from the back side of the wafer, forming an insulating film on the back side of the wafer, cutting a second area of the peripheral marginal area, the second area being not in contact with the adhesive, thereby removing the second area, and polishing the insulating film.

Abstract: A cutting apparatus includes a line sensor unit that applies a laser beam in a band shape elongated in a radial direction of a wafer to a region inclusive of a peripheral portion of the wafer held on a chuck table, and detects reflected light, and an information calculation section that calculates the position of the wafer and the height of the front surface of the wafer from the reflected light of the laser beam detected by the line sensor unit in a state in which the chuck table is rotated before the wafer is cut to form a stepped portion, and that calculates the width and the height of the stepped portion from the reflected light of the laser beam detected by the line sensor unit after the wafer is cut to form the stepped portion.

Abstract: A cutting apparatus includes a line sensor unit that applies a laser beam in a band shape elongated in a radial direction of a wafer to a region inclusive of a peripheral portion of the wafer held on a chuck table, and detects reflected light, and an information calculation section that calculates the position of the wafer and the height of the front surface of the wafer from the reflected light of the laser beam detected by the line sensor unit in a state in which the chuck table is rotated before the wafer is cut to form a stepped portion, and that calculates the width and the height of the stepped portion from the reflected light of the laser beam detected by the line sensor unit after the wafer is cut to form the stepped portion.