Patents by Inventor Komomo TANI

Komomo TANI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot
    Patent number: 10066316
    Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: September 4, 2018
    Assignee: SHOWA DENKO K.K.
    Inventors: Komomo Tani, Takayuki Yano, Tatsuo Fujimoto, Hiroshi Tsuge, Kazuhito Kamei, Kazuhiko Kusunoki, Kazuaki Seki
  • METHOD FOR PRODUCING SILICON CARBIDE SINGLE-CRYSTAL INGOT AND SILICON CARBIDE SINGLE-CRYSTAL INGOT
    Publication number: 20180066380
    Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.
    Type: Application
    Filed: February 18, 2016
    Publication date: March 8, 2018
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Komomo TANI, Takayuki YANO, Tatsuo FUJIMOTO, Hiroshi TSUGE, Kazuhito KAMEI, Kazuhiko KUSUNOKI, Kazuaki SEKI