Patents by Inventor Kong-Soon Park

Kong-Soon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9166047
    Abstract: The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (VGS) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: October 20, 2015
    Assignee: SILICON WORKS CO., LTD
    Inventors: Young Jin Woo, Kong Soon Park, Young Sik Kim
  • Publication number: 20140264578
    Abstract: The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (VGS) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.
    Type: Application
    Filed: June 3, 2014
    Publication date: September 18, 2014
    Applicant: SILICON WORKS CO., LTD
    Inventors: Young Jin WOO, Kong Soon Park, Young Sik Kim
  • Patent number: 8836027
    Abstract: The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (VGS) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: September 16, 2014
    Assignee: Silicon Works Co., Ltd.
    Inventors: Young Jin Woo, Kong Soon Park, Young Sik Kim
  • Publication number: 20120241859
    Abstract: The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (VGS) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.
    Type: Application
    Filed: March 20, 2012
    Publication date: September 27, 2012
    Applicant: SILICON WORKS CO., LTD
    Inventors: Young-Jin WOO, Kong-Soon Park, Young-Sik Kim