Abstract: A heat sink (10) for a semiconductor package (38) includes a top surface (12) having a recessed hole (16) at its center. A sidewall (14) formed around the top surface (12) of the heat sink (10) has gaps (18) formed in the sidewall (14). An air vent (22) is formed at a corner of the heat sink (10). The heat sink (10) is used for center gate molding. Mold compound (24) enters the recessed hole (16), covers an IC die 30, and exits via the gaps (18). During mold injection, air escapes through the air vent (22).

Abstract: A method of forming a substrateless semiconductor package (10) includes forming a carrier (16) on a base plate (12) and attaching an integrated circuit (IC) die (32) to the carrier (16). The IC die (32) then is electrically connected to the carrier (16). A molding operation is performed to encapsulate the IC die (32), the electrical connections (36) and the carrier (16). Thereafter, the base plate (12) is removed.

Abstract: A stacked multichip package (100) has a base carrier (102) having a top side (108) and a bottom side (110), a bottom integrated circuit die (104) having a bottom surface (112) attached to the base carrier top side (108), and an opposing, top surface (114). The top surface (114) has a peripheral area including a plurality of first bonding pads and a central area (120). A bead (124) is formed on the top surface (114) of the bottom die (104) between the peripheral area and the central area (120). A top integrated circuit die (106) having a bottom surface is positioned over the bottom die (104) and the bottom surface of the top die (106) is attached to the top surface (114) of the bottom die (104) via the bead (124). The bead (124) maintains a predetermined spacing between the bottom die (104) and the top die (106) so that wirebonds of first wires (122) connecting the bottom die (104) to the base carrier (102) are not damaged when the top die (106) is attached to the bottom die (104).

Abstract: An improved method of bonding an insulated wire (14) that has one end connected to a first bond pad (16) to a second bond pad (18) includes moving a tip of a capillary (20) holding the bond wire (14) over the surface of the second bond pad (18) such that the bond wire (14) is rubbed between the capillary tip (20) and the second bond pad (18), which tears the bond wire insulation so that at least a portion of a metal core of the wire (14) contacts the second bond pad (18). The wire (14) is then bonded to the second pad (18) using thermocompression bonding. The tip of the capillary (20) is roughened to enhance the tearing of the bond wire insulation.