Patents by Inventor Konosuke Hayashi

Konosuke Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230307262
    Abstract: According to one embodiment, a substrate processing apparatus includes: a holding unit that holds a substrate; a driving unit that is provided in the holder and rotates the substrate together with the holder; a supply unit that supplies a processing liquid to a target surface of the substrate; a first cup provided to surround the substrate; a second cup provided to surround the first cup and having an inner wall surface having a property different from a property of an inner wall surface of the first cup; and a movement controller that moves the first cup and the second cup such that the processing liquid scattered from the substrate is received either on the inner wall surface of the first cup or on the inner wall surface of the second cup.
    Type: Application
    Filed: March 20, 2023
    Publication date: September 28, 2023
    Inventors: Konosuke HAYASHI, Koichi HIGUCHI
  • Patent number: 11670522
    Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 6, 2023
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke Hayashi, Kunihiro Miyazaki
  • Publication number: 20200135505
    Abstract: A substrate processing apparatus includes: a removing part configured to remove liquid droplets present in a recess; a drain hole located at the bottom of the recess of a nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess; and a controller configured to control the discharge state of a gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach a surface to be processed of the substrate, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.
    Type: Application
    Filed: December 30, 2019
    Publication date: April 30, 2020
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke HAYASHI, Takashi OOTAGAKI
  • Publication number: 20200135504
    Abstract: A substrate processing apparatus includes: a removing part configured to remove liquid droplets present in a recess; a drain hole located at the bottom of the recess of a nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess; and a controller configured to control the discharge state of a gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach a surface to be processed of the substrate, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.
    Type: Application
    Filed: December 30, 2019
    Publication date: April 30, 2020
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke HAYASHI, Takashi OOTAGAKI
  • Patent number: 10607863
    Abstract: According to one embodiment, a substrate processing apparatus includes: a removing part (D1) configured to remove liquid droplets present in a recess (30); a drain hole (30a) located at the bottom of the recess (30) of a nozzle head (32), and configured to discharge the liquid droplets as a target to be removed out of the recess (30); and a controller configured to control the discharge state of a gas discharge nozzle (33) such that there is a period in which a gas is discharged from the gas discharge nozzle (33) at a flow rate, at which the gas discharged does not reach a surface to be processed of s substrate W, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: March 31, 2020
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke Hayashi, Takashi Ootagaki
  • Patent number: 10586727
    Abstract: A suction stage may include a mounting section configured to mount a first substrate, and an evacuation section configured to evacuate air between the first substrate and the mounting section. The mounting section includes a ring-shaped first wall part, and a ring-shaped second wall part inside the first wall part. The evacuation section includes a first control valve between the evacuation section and a first region between the first and second wall parts, a second control valve between the evacuation section and a second region inside the second wall part, and a control section configured to control the valves. The control section is configured to control the valves so that suction and non-suction of the first substrate are alternately performed in at least one of the regions. Thus, suction of the first substrate may be deactivated in one of the regions, while the suction is active in the other region.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: March 10, 2020
    Assignee: Shibaura Mechatronics Corporation
    Inventors: Emi Matsui, Konosuke Hayashi, Takahiro Kanai
  • Patent number: 10460961
    Abstract: According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: October 29, 2019
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Yuji Nagashima, Konosuke Hayashi
  • Patent number: 10406566
    Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: September 10, 2019
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Jun Matsushita, Yuji Nagashima, Konosuke Hayashi, Kunihiro Miyazaki
  • Patent number: 10325787
    Abstract: According to one embodiment, a substrate processing apparatus (1) includes: a support (4) configured to support a substrate (W) in a plane; a rotation mechanism (5) configured to rotate the support (4) about an axis that crosses a surface of the substrate (W) supported by the support (4) as a rotation axis; a plurality of nozzles (6a, 6b, 6c), which are aligned from the center toward the periphery of the substrate (W) supported by the support (4), configured to eject a treatment liquid to the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5), and a controller (9) configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5).
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: June 18, 2019
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke Hayashi, Takashi Ootagaki, Yuji Nagashima, Akinori Iso
  • Patent number: 10281210
    Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: May 7, 2019
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Kunihiro Miyazaki, Konosuke Hayashi, Takashi Ootagaki, Yuji Nagashima
  • Patent number: 10276406
    Abstract: A substrate processing device includes a suction drying section drying a surface of a substrate by absorbing and removing a liquid droplet of volatile solvent formed on the surface of the substrate by a heating operation of a heating section.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: April 30, 2019
    Assignee: Shibaura Mechatronics Corporation
    Inventors: Konosuke Hayashi, Masaaki Furuya, Takashi Ootagaki, Yuji Nagashima, Atsushi Kinase, Masahiro Abe
  • Patent number: 9972513
    Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: May 15, 2018
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Yuki Saito, Konosuke Hayashi, Takashi Ootagaki, Yuji Nagashima
  • Patent number: 9964358
    Abstract: The substrate processing unit 1 comprises the rotating table 31 configured to hold substrate W, the processing chamber 37 which accommodates the rotating table 31, a lamp 61 is provided above the processing chamber 37 and configured to heat the surface of substrate W, the lamp chamber 60 which accommodates that lamp 61, a transmission window 62 disposed below the lamp chamber 60, and a plurality of nozzle 64 which supply cooling fluid G to the transmission window 62. Then the substrate processing unit 1 can suppress generating of a water mark or pattern collapse, and can perform good substrate processing.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: May 8, 2018
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Jun Matsushita, Takashi Miyamoto, Konosuke Hayashi, Osamu Yamazaki
  • Patent number: 9966282
    Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: May 8, 2018
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Kunihiro Miyazaki, Kenji Minami, Yuji Nagashima, Konosuke Hayashi
  • Publication number: 20180096864
    Abstract: According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.
    Type: Application
    Filed: September 29, 2017
    Publication date: April 5, 2018
    Applicant: Shibaura Mechatronics Corporation
    Inventors: Yuji Nagashima, Konosuke Hayashi
  • Publication number: 20180033651
    Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.
    Type: Application
    Filed: July 27, 2017
    Publication date: February 1, 2018
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke HAYASHI, Kunihiro MIYAZAKI
  • Patent number: 9811096
    Abstract: A liquid feeding device that feeds a treatment liquid to a treating device and also recovers the treatment liquid for re-feeding, include feeding tanks having an exhaust passage and an overflow line, and can be switched to one of a feeding mode in which the treatment liquid is fed and a standby mode in which the feeding tank is on standby while accommodating the treatment liquid; a feeding mechanism that feeds the treatment liquid to the treating device from the feeding tank in the feeding mode among the plurality of feeding tanks; a recovery mechanism that recovers and returns the treatment liquid excessive in the treatment device to the feeding tank in the feeding mode; and an on-off mechanism provided in each of the plurality of feeding tanks to block the exhaust passage and the overflow line is provided.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: November 7, 2017
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke Hayashi, Takashi Ootagaki, Emi Matsui
  • Patent number: 9795999
    Abstract: A substrate processing apparatus according to an embodiment includes: a liquid supplier configured to supply a processing liquid to a surface of a substrate; a temperature detector configured to detect a surface temperature of the substrate supplied with the processing liquid by the liquid supplier; a temperature monitor configured to determine whether or not the surface temperature detected by the temperature detector has reached a predetermined temperature; and a controller configured to cause the liquid supplier to stop supplying the processing liquid when the temperature monitor determines that the surface temperature has reached the predetermined temperature.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: October 24, 2017
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Takashi Ootagaki, Konosuke Hayashi, Yosuke Himori
  • Publication number: 20170278729
    Abstract: According to one embodiment, a substrate processing apparatus includes: a removing part (D1) configured to remove liquid droplets present in a recess (30); a drain hole (30a) located at the bottom of the recess (30) of a nozzle head (32), and configured to discharge the liquid droplets as a target to be removed out of the recess (30); and a controller configured to control the discharge state of a gas discharge nozzle (33) such that there is a period in which a gas is discharged from the gas discharge nozzle (33) at a flow rate, at which the gas discharged does not reach a surface to be processed of s substrate W, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.
    Type: Application
    Filed: September 30, 2015
    Publication date: September 28, 2017
    Inventors: Konosuke HAYASHI, Takashi OOTAGAKI
  • Publication number: 20170259308
    Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Jun MATSUSHITA, Yuji NAGASHIMA, Konosuke HAYASHI, Kunihiro MIYAZAKI