Abstract: The invention relates to methods and devices comprising a nanostructure (2;4,4a) for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure (2) is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer (3) can be reduced by supplying a buffer layer (406). Many applications are disclosed.

Abstract: The invention relates to processes for the production and elements (components) with a nanostructure (2; 4, 4a) for improving the optical behavior of components and devices and/or for improving the behavior of sensors by enlarging the active surface area. The nanostructure (2) is produced in a self-masking fashion by means of RIE etching and its material composition can be modified and it can be provided with suitable cover layers.

Abstract: By means of an RIE etch process for silicon (3), a pin-type structure (4,4a) without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interference lithography, and the like) by selecting the gas components of the etch plasma in self-organization wherein, among others, a broadband antireflective behavior is obtained that may be applicable in many fields.

Abstract: By means of an RIE etch process for silicon (3), a pin-type structure (4,4a) without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interference lithography, and the like) by selecting the gas components of the etch plasma in self-organization wherein, among others, a broadband antireflective behaviour is obtained that may be applicable in many fields.

Abstract: The invention relates to processes for the production and elements (components) with a nanostructure (2; 4, 4a) for improving the optical behavior of components and devices and/or for improving the behavior of sensors by enlarging the active surface area. The nanostructure (2) is produced in a self-masking fashion by means of RIE etching and its material composition can be modified and it can be provided with suitable cover layers.

Abstract: The invention relates to methods and devices comprising a nanostructure (2;4,4a) for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure (2) is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer (3) can be reduced by supplying a buffer layer (406). Many applications are disclosed.

Abstract: Methods and optical devices are proposed, which comprise a nanostructure (4) on a curved surface so that a broadband antireflective characteristic is obtained.

Abstract: The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.

Abstract: The invention relates to a fast photodiode and to a method for the production thereof in CMOS technology. The integrated PIN photodiode, which is formed or can be formed by CMOS technology, consists of an anode corresponding to a highly doped p-type substrate with a specific electric resistance of less than 50 mOhm*cm, a lightly p-doped l-region which is adjacent to the anode, and an n-type cathode which corresponds to the doping in the n-well region. The lightly doped l-region has a doping concentration of less than 1014 cm?3 and has a thickness of between 8 and 25 ?m. The cathode region is completely embedded in the very lightly doped l-region. A distance from the edge of the cathode region to a highly doped adjacent region is in the range of 2.5 ?m to 10 ?m.

Abstract: The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evalation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.