Abstract: A magnetic field sensor component, comprising: a piezoelectric portion; a plate portion comprising (i) a drive electrode superposed over the piezoelectric portion and in mechanical communication with the piezoelectric portion, the drive electrode comprising a magnetostrictive material and (ii) a sense electrode superposed over the piezoelectric portion and in mechanical communication with the piezoelectric portion, the sense electrode comprising a magnetostrictive material; and a tether portion extending from the plate portion, and the magnetostrictive drive electrode being configured to be electrically driven so as to effect a strain modulation of the magnetostrictive drive electrode that upconverts a received magnetic field to a resonance band of the magnetostrictive drive electrode. A method, comprising operating a magnetic field sensor component according to the present disclosure.

Abstract: A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.

Abstract: A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.

Abstract: A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.

Abstract: This invention pertains to a spintronic device for emitting light and to a method for its operation. The device includes a cathode electrode capable of producing spin-polarized charge carrier electrons under the influence of an electric field; an anode electrode spaced from the cathode for producing spin-polarized charge carrier holes; an intermediate medium disposed between the electrodes into which the carriers are injected under the influence of an electric field and which serves as a transport medium for the carriers wherein the carriers are transported and within which the carriers react and form excitons; and a circuit between the electrodes for imparting en electric field which serves as the motive force for the carriers.

Abstract: This invention pertains to a spintronic device for emitting light and to a method for its operation. The device includes a cathode electrode capable of producing spin-polarized charge carrier electrons under the influence of an electric field; an anode electrode spaced from the cathode for producing spin-polarized charge carrier holes; an intermediate medium disposed between the electrodes into which the carriers are injected under the influence of an electric field and which serves as a transport medium for the carriers wherein the carriers are transported and within which the carriers react and form excitons; and a circuit between the electrodes for imparting en electric field which serves as the motive force for the carriers.

Abstract: A wafer suitable to be tested for current-perpendicular to the plane resistance includes a substrate, a conductive base layer on the substrate, a magnetic multilayer on the conductive base layer, and a top conductive layer. A testing ring is formed on the magnetic multilayer in a manner whereby it is separated from rest of the magnetic multilayer by a trench in the magnetic multilayer. Within the testing ring, the magnetic multilayer includes a hole. The current perpendicular to the plane resistance of the wafer may be determined by passing a predetermined current perpendicular through the testing ring by contacting a probe to the testing ring and measuring the voltage at the conductive base layer. The probe used in the present invention may be an AFM or a STM probe.

Abstract: A GMR stack has at least two ferromagnetic layers (e.g.,CoFe) spaced from each other by a nonferromagnetic layer (e.g., Cu). A layer of a phase-breaking material (such as Ta or a Ta-base alloy) between the nonferromagnetic layer and at least one of the two ferromagnetic layers prevents the undesirable growth of large-grained structures in the ferromagnetic layers.