Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

Abstract: The invention relates to a method for separating out substances dissolved and/or undissolved in fluid media. The method is characterized by it being a suitable combination of a membrane filtration technique and an adsorption technique. This enhances the flow and purification capacity by a multiple factor in making a compact, lightweight system possible.