Abstract: A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

Abstract: A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.

Abstract: A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

Abstract: Molten silicon is controllably fed into a nip between spaced-apart rollers, converted into a wide ribbon of a desired thickness by passing through such nip and then solidified. The solidified silicon ribbon is then severed into plate-shaped bodies of desired dimension for use in the manufacture of solar cells.

Abstract: Technical-grade silicon is purified to produce silicon having less than 1 ppm of electrically effective impurities therein, particularly boron and phosphorus, by treating molten technical silicon with a hydrogen containing gas in the presence of water so as to remove such impurities from the molten silicon.

Abstract: A smooth surfaced amorphous silicon layer useful in semiconductor technology is produced by pyrolytic deposition of elemental silicon onto a heated mandrel along with simultaneous pyrolytic deposition of at least one other element selected from Groups IV through VIII and which is non-semiconductive and does not function as a conductivity determining dopant.

Abstract: Si monocrystals of the n-type are produced by zone melting polycrystalline Si rods under conditions sufficient to produce monocrystal rods, measuring the specific conductivity of such monocrystal rods and subjecting such monocrystal rods to a controlled radiation by thermal neutrons based on the measured conductivity to produce a desired degree of n-conductivity in the ultimately attained rods.

Abstract: Homogeneously doped Si monocrystals of the n-type are produced from p- or n-type Si crystals having a random dopant concentration in radial and axial directions of the crystal and the dopant concentration within such crystals is adjusted by subjecting such crystals to controlled thermal neutron radiation.

Abstract: A homogeneously doped p-conductive semiconductor material is produced by irradiating a desired semiconductor material with .gamma.-photons which trigger nuclear reactions within such irradiated material to form dopant atoms therein.

Abstract: A non-contaminating thermal stress-free reaction container for thermal deposition of elemental silicon comprised of a base plate and a tubular member placed thereon which has at least the side walls of the container composed of pure silicon.

Abstract: Apparatus for indiffusing dopant into a semiconductor material. The apparatus comprises a heatable tube of the same semiconductor material, the wall of which is from 0.5 to 20 mm thick and is gas-tight under reaction conditions.

Abstract: A U-shaped carrier member formed out of a bent silicon starting rod which is uniformly heatable by means of electric current and which is substantially neither elongated nor contracted relative to the starting rod. A process for the preparation of such carrier member is provided.

Abstract: For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped, electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.

Abstract: Described are two methods of producing a hollow body, comprised of semiconductor material, especially silicon, by precipitation from a gaseous compound of said semiconductor material upon the surface of a heated carrier body, which after a sufficiently thick layer of semiconductor material has been precipitated, is removed again without damaging said layer. One method is characterized by using a hollow carrier body, open at least at two opposite sides. In one embodiment, prior to the precipitation of the semiconductor material, one of the open sides of the carrier body is covered by a wafer from the same semiconductor material whose shape corresponds to the open side. Thereafter, the semiconductor material is precipitated from the gaseous compound until the desired layer thickness and a gas-tight connection is obtained between the layer and the covering semiconductor material. The second method precipitates a semiconductor layer and thereafter welds a cover on one or both open ends the tube.