Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.

Abstract: A wide band gap semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface along a vertical direction. The semiconductor device further includes a first region of a first conductivity type adjoining at least partially the first surface, a drift region of a second conductivity type, a highly doped second region adjoining the second surface, and a buffer region of the second conductivity type arranged between the drift region and the highly doped second region. A vertical profile of a doping concentration of the buffer region includes at least one step in a first section and is increasing approximately exponentially toward the second surface in a second section. The first section is arranged between the second section and the highly doped second region.

Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.

Abstract: A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.

Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.

Abstract: A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.

Abstract: A power semiconductor device includes an active region having a total volume with a central volume forming at least 20% of the total volume, a peripheral volume forming at least 20% of the total volume and surrounding the central volume, and an outermost peripheral volume forming at least 5% of the total volume and surrounding the peripheral volume. The peripheral volume has a constant lateral distance from an edge termination region. A first doped semiconductor region is electrically connected with a first load terminal at a semiconductor body frontside. A second doped semiconductor region is electrically connected with a second load terminal at a semiconductor body backside. The first and/or second doped semiconductor region has: a central portion extending into the central volume and having a central average dopant dose; and a peripheral portion extending into the peripheral volume and having a peripheral average dopant dose.

Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.